• Journal of the Semiconductor & Display Technology
• /
• v.21 no.3
• /
• pp.57-62
• /
• 2022

The plasma resistance of multi-component glasses containing La, Gd, Ti, Zn, Y, Zr, Nb, and Ta was analyzed in this study. The plasma etching was performed via inductively coupled plasma-reactive ion etching (ICP-RIE) using CF₄/O₂/Ar mixed gas. After the reaction, the glass with a low fluoride sublimation temperature and high content of P, Si, and Ti elements showed a high etching rate. On the other hand, the glass containing a high fluoride sublimation temperature component such as Ca, La, Gd, Y, and Zr exhibited high plasma resistance because the etch rate was lower than that of sapphire. Glass with low plasma resistance increased surface roughness after etching or nanoholes were formed on the surface, but glass with high plasma resistance showed little change in surface microstructure. Thus, the results of this study demonstrate the potential for the development of plasma-resistant glasses (PRGs) with other compositions besides alumino-silicate glasses, which are conventionally referred to as plasma-resistant glasses.

• Journal of the Semiconductor & Display Technology
• /
• v.21 no.1
• /
• pp.119-126
• /
• 2022

MAS-based glass, which has been studied to replace the ceramic material used in the plasma etching chamber, has problems such as forming and processing due to its high melting temperature. To solve this problem, in this study, fluoride was added to the existing MAS-based glass to increase the workability in the glass manufacturing and to improve the chemical resistance to CF₄/Ar/O₂ plasma gas. Through RAMAN analysis, the structural change of the glass according to the addition of fluoride was observed. In addition, it was confirmed that high-temperature viscosity and thermal properties decreased as the fluoride content increased and plasma resistance was maintained, it showed an excellent etching rate of up to 11 times compared to quartz glass.

• Journal of the Semiconductor & Display Technology
• /
• v.20 no.2
• /
• pp.61-66
• /
• 2021

In this study, we studied the alternative of plasma resistant ceramic parts that constitute plasma chambers in the semiconductor dry etching process. MgO-Al₂O₃-SiO₂(MAS) glass was made of 13 types of glass using the Design Of Experiments(DOE) and the effect on thermal properties such as glass transition temperature and crystallization temperature depending on the content of each composition and etching resistance to CF₄/O₂/Ar plasma gas. MAS glass showed excellent plasma resistance and surface roughness up to 20 times higher than quartz glass. As the content of Al₂O₃ and MgO increases, the plasma resistance is improved, and it has been confirmed that it has an inverse relationship with SiO₂.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.34 no.4
• /
• pp.131-138
• /
• 2024

In this study, the microstructure and plasma resistance characteristics of 35Bi₂O₃-15Al₂O₃-50SiO₂ (BiAl SiO) and 35Bi₂O₃-7.5Al₂O₃-50SiO₂-7.5AlF₃ (BiAlSiOF) glass layers coated on sintered alumina substrates were investigated according to the sintering conditions. The coated layers were formed using the bar coating method and then sintered at a temperature in the range of 700~900℃, which corresponds to the temperature before and after the hemisphere forming temperature, after a debinding process. The plasma resistance of the two coated glasses was approximately 2~3 times higher than that of the quartz glass, and in particular, the BiAlSiOF glass film with F added showed higher plasma resistance than BiAlSiO. It is thought to be due to the effect of suppressing the reaction with fluorine gas by adding fluorine to the glass. When the sintering time was increased at 700℃ and 800℃, the plasma resistance of both glasses improved, but when the sintering temperature was increased to 900℃, the plasma resistance decreased again (i.e., the etching rate increased). This phenomenon is thought to be related to the crystallization behavior of both glasses. The change in plasma resistance depending on the sintering conditions is thought to be related to the appearance of Al and Bi-rich phases.

• Journal of the Semiconductor & Display Technology
• /
• v.22 no.1
• /
• pp.64-71
• /
• 2023

In this study, we investigated the effects of BiAlSiO glass composition on its glass forming range, thermal properties, and plasma resistance. The results showed that increasing the Al2O3 content suppressed the tendency for crystallization and hindered glass formation beyond a certain threshold. Bi2O3 was found to increase the content of non-bridging oxygen, resulting in a decrease in glass transition temperature and an increase in thermal expansion coefficient. Furthermore, the etching rate was found to improve with increasing Al2O3 content but decrease with increasing SiO2 content. It was concluded that the boiling point of fluorinated compounds should be considered to 900℃. Therefore, this study is expected to contribute to the understanding of the properties of BiAlSiO glass and its application to low temperature melting PRG compositions.

• Journal of the Korean Ceramic Society
• /
• v.53 no.6
• /
• pp.700-706
• /
• 2016

Etch rate, surface roughness and microstructure as plasma resistance were evaluated for six kinds of oxide glass with different compositions. Borosilicate glass (BS) was found to be etched at the highest etch rate and zinc aluminum phosphate glass (ZAP) showed a relatively lower etch rate than borosilicate. On the other hand, the etching rate of calcium aluminosilicate glass (CAS) was measured to be similar to that of sintered alumina while yttrium aluminosilicate glass (YAS) showed the lowest etch rate. Such different etch rates by mixture plasma as a function of glass compositions was dependent on whether or not fluoride compounds were formed on glass and sublimated in high vacuum. Especially, in view that $CaF_2$ and $YF_3$ with high sublimation points were formed on the surface of CAS and YAS glasses, both CAS and YAS glasses were considered to be a good candidate for protective coating materials on the damaged polycrystalline ceramics parts in semi-conductor and display processes.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.49.1-49.1
• /
• 2010

The particle generation during the plasma enhanced process is highly considered as serious problem in the semiconductor manufacturing industry. The material for the plasma processing chamber requires the plasma etching characteristics which are homogeneously etched surface and low plasma etching depth for preventing particulate contamination and high durability. We found that the materials without grain boundaries can prevent the particle generation. Therefore, the amorphous material with the low plasma etching rate may be the best candidate for the plasma processing chamber instead of the polycrystalline materials such as yttria and alumina. Three glasses based on $SiO_2$ and $Al_2O_3$ were prepared with various rare-earth elements (Gd, Y and La) which are same content in the glass. The glasses were plasma etched in the same condition and their plasma etching rate was compared including reference materials such as Si-wafer, quartz, yttria and alumina. The mechanical and thermal properties of the glasses were highly related with cationic field strength (CFS) of the rare-earth elements. We assumed that the plasma etching resistance may highly contributed by the thermal properties of the fluorine byproducts generated during the plasma exposure and it is expected that the Gd containing glass may have the highest plasma etching resistance due to the highest sublimation temperature of $GdF_3$ among three rare-earth elements (Gd, Y and La). However, it is found that the plasma etching results is highly related with the mechanical property of the glasses which indicates the cationic field strength. From the result, we conclude that the glass structure should be analyzed and the plasma etching test should be conducted with different condition in the future to understand the plasma etching behavior of the glasses perfectly.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.30 no.2
• /
• pp.66-72
• /
• 2020

The difference of plasma resistance between the CAS glass bulk and coating films were compared. Plasma resistance was confirmed by analyzing the etch rate and the microstructure of the surface when the CAS glass bulk and the glass coating film were etched with CF₄/O₂/Ar plasma gas. CAS glass coating film was etched up to 25 times faster than the glass bulk. A statistically high correlation between the surface roughness and the etching rate of the coating film was derived, and thus, the high surface roughness of the coating film was determined to cause rapid etching. In addition, cristobalite crystals that has a low Ca content and a high Si content, was foamed on the glass coating film. Therefore, the CAS glass coating film is considered to have low plasma resistance compared to the glass bulk.

• Korean Journal of Metals and Materials
• /
• v.50 no.7
• /
• pp.545-548
• /
• 2012

The optical and electronic properties of Indium Tin Oxide (ITO) thin films deposited on a RF-plasma treated glass substrate were investigated by X-Ray Photoelectron Spectroscopy (XPS), Ultra-violet Photoelectron Spectroscopy (UPS), Reflected Electron Energy Loss Spectroscopy (REELS). The modification of glass substrates was carried out by varying the time of the plasma surface treatment in an oxygen atmosphere. The focus of this research was to examine how the optical and electronic properties of ITO thin films change with the plasma treatment time. The surface energy increased since the carbon bonds were removed from the surface after the glass substrate received the surface treatment. The ITO thin films produced on the glass substrate with surface treatment showed that the high optical transmittance was approximately 85%. The measured band gap energy was as high as 3.23 eV when the plasma treatment time was 60 s and the work function after the treatment was increased by 0.5 eV in comparison to that before the treatment of 60 s. The ITO thin film exhibited an excellent sheet resistance of $2.79{\Omega}/{\Box}$. We found that the optical and electronic properties of ITO thin films can be improved by RF-plasma surface treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.4
• /
• pp.290-296
• /
• 2011

Carbon nanotubes (CNTs) have excellent electrical, chemical stability, mechanical and thermal properties. In this paper, networks of Multi-walled carbon nanotube (MWCNT) materials were investigated as a resistive gas sensors for the $H_2$ gas detection. Sensor films were fabricated by the air spray method using the multi-walled CNTs dispersion solution on the glass substrates cured with plasma and nitrocellulose. Sensors were characterized by the resistance measurements in the self-fabricated oven in order to find the optimum detection properties for the hydrogen gas molecular. The sensitivity and the linearity of the MWVNT sensors using the glass substrate cured with plasma for the $H_2$ gas concentration of 0.06~0.6 ppm are 0.013~0.097%/sec and 0.131~0.959%FS, respectively. The MWCNT film was excellent in the response for the hydrogen gas moleculars and its reaction speed was very fast, which could be using as hydrogen gas sensor. The resistance of the fabricated sensors decreases when the sensors are exposed to $H_2$ gas.