• Title/Summary/Keyword: Plasma propagation

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Identification of Retinol-binding Protein Produced by Caprine Endometrium during Periattachment Period of Early Pregnancy

  • Liu, K.H.;Huang, J.C.;Lin, J.H.
    • Asian-Australasian Journal of Animal Sciences
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    • v.15 no.12
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    • pp.1708-1713
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    • 2002
  • Endometrial explants obtained from does between days 13 and 21 of pregnancy were cultured in a modified minimum essential medium in the presence of [$^35S$]methionine and [$^3H$]-leucine. Proteins synthesized and secreted into medium were analyzed by fluorography of two-dimensional polyacrylamide gel electrophoresis and fluorography. No marked qualitative changes in patterns of protein production by caprine endometrium between days 13-21 of pregnancy. At least 11 proteins showed consistently a clear spot or a grouping of spots with characteristic location on two-dimensional gels. A major low molecular weight protein consisted of two major isoforms (pI 5.3-6.0) of similar molecular mass (21 kDa). Limited N-terminal sequence analysis of these two isoforms showed that the protein had complete homology with bovine placental and plasma retinol-binding protein (RBP) over the first 20 amino acids. Through use of the antiserum raised against bovine placental RBP, immunoreactive RBP was detected in cultures conditioned by uterine explants prepared at days 13, 15 and 21 of pregnancy. In the present study, proteins synthesized and secreted by caprine endometrium during periattachment period of early pregnancy were characterized. The pregnant endometrium secreted a number of neutral-to-acidic proteins which constituted, in part, the histotroph. A vitamin A-transport protein, RBP, was identified in cultures conditioned by endometrium of days 13-21 of pregnancy. The uterine endometrium is the only source of retinol for embryonic tissues. The uterine RBP appears to transport retinol locally toward embryonic tissues. Secretion of RBP by caprine endometrium of days 13, 15 and 21 of pregnancy suggested that retinol played an important role in conceptus development during periattachment period of early pregnancy.

Non-linear optical properties of PECVD nanocrystal-Si nanosecond excitation (PECVD로 제조된 나노결정실리콘 비선형 광학적특성)

  • Yang, Hyeon-Hun;Kim, Han-Wool;Kim, Joo Hoe;Kim, Chul Joong;Lee, Chang Gwon
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.60.2-60.2
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    • 2011
  • A study of the non-linear optical properties of nanocrystal-Si embedded in SiO2 has been performed by using the z-scan method in the nanosecond and femtosecond ranges. Substoichiometric SiOx films were grown by plasma-enhanced chemical-vapor deposition(PECVD) on silica substrates for Si excesses up to 24 at/%. An annealing at $1250^{\circ}C$ for 1 hour was performed in order to precipitate nanocrystal-Si, as shown by EFTEM images. Z-scan results have shown that, by using 5-ns pulses, the non-linear process is ruled by thermal effects and only a negative contribution can be observed in the non-linear refractive index, with typical values around $-10-10cm^2/W$. On the other hand, femtosecond excitation has revealed a pure electronic contribution to the nonlinear refractive index, obtaining values in the order of 10-12 cm2/W. Simulations of heat propagation have shown that the onset of the temperature rise is delayed more than half pulse-width respect to the starting edge of the excitation. A maximum temperature increase of ${\Delta}T=123.1^{\circ}C$ has been found after 3.5ns of the laser pulse maximum. In order to minimize the thermal contribution to the z-scan transmittance and extract the electronic part, the sample response has been analyzed during the first few nanoseconds. By this method we found a reduction of 20% in the thermal effects. So that, shorter pulses have to be used obtain just pure electronic nonlinearities.

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Neural Network Structure and Parameter Optimization via Genetic Algorithms (유전알고리즘을 이용한 신경망 구조 및 파라미터 최적화)

  • 한승수
    • Journal of the Korean Institute of Intelligent Systems
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    • v.11 no.3
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    • pp.215-222
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    • 2001
  • Neural network based models of semiconductor manufacturing processes have been shown to offer advantages in both accuracy and generalization over traditional methods. However, model development is often complicated by the fact that back-propagation neural networks contain several adjustable parameters whose optimal values unknown during training. These include learning rate, momentum, training tolerance, and the number of hidden layer neurOnS. This paper presents an investigation of the use of genetic algorithms (GAs) to determine the optimal neural network parameters for the modeling of plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide films. To find an optimal parameter set for the neural network PECVD models, a performance index was defined and used in the GA objective function. This index was designed to account for network prediction error as well as training error, with a higher emphasis on reducing prediction error. The results of the genetic search were compared with the results of a similar search using the simplex algorithm.

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A Spatio-Temporal Density Measurement of NO Molecules in Pulsed Barrier Discharge Using Laser Induced Fluorescence (레이져 유기형광법을 이용한 펄스 배리어 방전 공간에서의 NO분자에 대한 시·공간적 밀도변화 측정)

  • Han, Sang-Bo
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.24 no.5
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    • pp.160-168
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    • 2010
  • This paper tried to find out NO generation and removal mechanisms in the space of the atmospheric pulsed barrier discharge using laser induced fluorescence method, which is a very effective approach to the measurement of spatio-temporal density of specific molecules. The propagation velocity of the primary streamer reaches about $2.7{\times}10^6$[m/s] and the secondary streamer is produced in the vicinity of positive electrode after the primary streamer finished. In this work, pulse Nd:Yag and Dye lasers are used for generating the specific wavelength of 226[nm], which is possible to excite NO molecules into $A^2{\Sigma}^+{\rightarrow}X^2{\prod}$(0,0) and fluorescence signals as the transition of $A^2{\Sigma}^+{\leftarrow}X^2$(0,2) is measured. For the effective removal of NO molecules in the plasma discharge process, the lower oxygen contents are needed and the influence of secondary streamer for the reduction mechanism of NO molecules is important

Effect of ZnO Nanoparticle Presence on SCC Mitigation in Alloy 600 in a Simulated Pressurized Water Reactors Environment

  • Sung-Min Kim;Woon Young Lee;Sekown Oh;Sang-Yul Lee
    • Journal of the Korean institute of surface engineering
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    • v.56 no.6
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    • pp.401-411
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    • 2023
  • This study investigates the synthesis, characterization, and application of zinc oxide (ZnO) nanoparticles for corrosion resistance and stress corrosion cracking (SCC) mitigation in high-temperature and high-pressure environments. The ZnO nanoparticles are synthesized using plasma discharge in water, resulting in rod-shaped particles with a hexagonal crystal structure. The ZnO nanoparticles are applied to Alloy 600 tubes in simulated nuclear power plant atmospheres to evaluate their effectiveness. X-ray diffraction and X-ray photoelectron spectroscopy analysis reveals the formation of thermodynamically stable ZnCr2O4and ZnFe2O4 spinel phases with a depth of approximately 35 nm on the surface after 240 hours of treatment. Stress corrosion cracking (SCC) mitigation experiments reveal that ZnO treatment enhances thermal and mechanical stability. The ZnO-treated specimens exhibit increased maximum temperature tolerance up to 310 ℃ and higher-pressure resistance up to 60 bar compared to non-treated ZnO samples. Measurements of crack length indicate reduced crack propagation in ZnO-treated specimens. The formation of thermodynamically stable Zn spinel structures on the surface of Alloy 600 and the subsequent improvements in surface properties contribute to the enhanced durability and performance of the material in challenging high-temperature and high-pressure environments. These findings have significant implications for the development of corrosion-resistant materials and the mitigation of stress corrosion cracking in various industries.

SARS-CoV-2 Antibody Neutralization Assay Platforms Based on Epitopes Sources: Live Virus, Pseudovirus, and Recombinant S Glycoprotein RBD

  • Endah Puji Septisetyani;Pekik Wiji Prasetyaningrum;Khairul Anam;Adi Santoso
    • IMMUNE NETWORK
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    • v.21 no.6
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    • pp.39.1-39.18
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    • 2021
  • The high virulent severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) virus that emerged in China at the end of 2019 has generated novel coronavirus disease, coronavirus disease 2019 (COVID-19), causing a pandemic worldwide. Every country has made great efforts to struggle against SARS-CoV-2 infection, including massive vaccination, immunological patients' surveillance, and the utilization of convalescence plasma for COVID-19 therapy. These efforts are associated with the attempts to increase the titers of SARS-CoV-2 neutralizing Abs (nAbs) generated either after infection or vaccination that represent the body's immune status. As there is no standard therapy for COVID-19 yet, virus eradication will mainly depend on these nAbs contents in the body. Therefore, serological nAbs neutralization assays become a requirement for researchers and clinicians to measure nAbs titers. Different platforms have been developed to evaluate nAbs titers utilizing various epitopes sources, including neutralization assays based on the live virus, pseudovirus, and neutralization assays utilizing recombinant SARS-CoV-2 S glycoprotein receptor binding site, receptor-binding domain. As a standard neutralization assay, the plaque reduction neutralization test (PRNT) requires isolation and propagation of live pathogenic SARS-CoV-2 virus conducted in a BSL-3 containment. Hence, other surrogate neutralization assays relevant to the PRNT play important alternatives that offer better safety besides facilitating high throughput analyses. This review discusses the current neutralization assay platforms used to evaluate nAbs, their techniques, advantages, and limitations.

Research of Diffusion Bonding of Tungsten/Copper and Their Properties under High Heat Flux

  • Li, Jun;Yang, Jianfeng
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.14-14
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    • 2011
  • W (tungsten)-alloys will be the most promising plasma facing armor materials in highly loaded plasma interactive components of the next step fusion reactors due to its high melting point, high sputtering resistance and low deuterium/tritium retention. The bonding technology of tungsten to Cu alloy was one of the key issues. In this paper, W/CuCrZr diffusion bonding has been performed successfully by inserting pure metal interlay. The joint microstructure, interfacial elements migration and phase composition were analyzed by SEM, EDS, XRD, and the joint shear strength and micro-hardness were investigated. The mock-ups were fabricated successfully with diffusion bonding and the cladding technology respectively, and the high heat flux test and thermal fatigue test were carried out under actively cooling condition. When Ni foil was used for the bonding of tungsten to CuCrZr, two reaction layers, Ni4W and Ni(W) layer, appeared between the tungsten and Ni interlayer with the optimized condition. Even though Ni4W is hard and brittle, and the strength of the joint was oppositely increased (217 MPa) due primarily to extremely small thicknesses (2~3 ${\mu}m$). When Ti foil was selected as the interlayer, the Ti foil diffused quickly with Cu and was transformed into liquid phase at $1,000^{\circ}C$. Almost all of the liquid was extruded out of the interface zone under bonding pressure, and an extremely thin residual layer (1~2 ${\mu}m$) of the liquid phase was retained between the tungsten and CuCrZr, which shear strength exceeded 160 MPa. When Ni/Ti/Ni multiple interlayers were used for bonding of tungsten to CuCrZr, a large number of intermetallic compound ($Ni_4W/NiTi_2/NiTi/Ni_3T$) were formed for the interdiffusion among W, Ni and Ti. Therefore, the shear strength of the joint was low and just about 85 MPa. The residual stresses in the clad samples with flat, arc, rectangle and trapezoid interface were estimated by Finite Element Analysis. The simulation results show that the flat clad sample was subjected maximum residual stress at the edge of the interface, which could be cracked at the edge and propagated along the interface. As for the rectangle and trapezoid interface, the residual stresses of the interface were lower than that of the flat interface, and the interface of the arc clad sample have lowest residual stress and all of the residual stress with arc interface were divided into different grooved zones, so the probabilities of cracking and propagation were lower than other interfaces. The residual stresses of the mock-ups under high heat flux of 10 $MW/m^2$ were estimated by Finite Element Analysis. The tungsten of the flat interfaces was subjected to tensile stresses (positive $S_x$), and the CuCrZr was subjected to compressive stresses (negative $S_x$). If the interface have a little microcrack, the tungsten of joint was more liable to propagate than the CuCrZr due to the brittle of the tungsten. However, when the flat interface was substituted by arc interfaces, the periodical residual stresses in the joining region were either released or formed a stress field prohibiting the growth or nucleation of the interfacial cracks. Thermal fatigue tests were performed on the mock-ups of flat and arc interface under the heat flux of 10 $MW/m^2$ with the cooling water velocity of 10 m/s. After thermal cycle experiments, a large number of microcracks appeared at the tungsten substrate due to large radial tensile stress on the flat mock-up. The defects would largely affect the heat transfer capability and the structure reliability of the mock-up. As for the arc mock-up, even though some microcracks were found at the interface of the regions, all microcracks with arc interface were divided into different arc-grooved zones, so the propagation of microcracks is difficult.

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Copper Interconnection and Flip Chip Packaging Laboratory Activity for Microelectronics Manufacturing Engineers

  • Moon, Dae-Ho;Ha, Tae-Min;Kim, Boom-Soo;Han, Seung-Soo;Hong, Sang-Jeen
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.431-432
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    • 2012
  • In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

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Changes in Lymphocyte DNA Damage and Antioxidant Status after Supplementing Propolis to Korean Smokers: A Placebo-Controlled, Double-Blind Cross-Over Trial (프로폴리스 섭취 후 흡연자의 임파구 DNA 손상도 및 항산화 상태의 변화: 이중맹검 교차 인체시험)

  • Kang, Myung-Hee;Lee, Hye-Jin;Kim, Mi-Kyung;Sung, Mi-Kyung;Kwon, O-Ran;Park, Yoo-Kyoung
    • Journal of Nutrition and Health
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    • v.42 no.5
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    • pp.442-452
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    • 2009
  • Smoking has been known to exacerbate the initiation and propagation of oxidative stresses. Efforts have been made to reduce the smoking-induced oxidative stresses using commercial dietary supplements. Propolis is the resinous substance collected by bees from the leaf buds and bark of trees, especially poplar and conifer trees. In this trial, we examined whether a daily supplementation of 800 mg propolis can protect endogenous lymphocytic DNA damage and modulate antioxidative enzyme activities and the level of antioxidant vitamin in smokers using a placebo-controlled, doubleblinded cross-over trial. After two weeks of running-in period, 29 smokers (mean age 34.38 ${\pm}$ 1.73) received 6 tablets/day of either propolis or placebo pills for 4 weeks. After 2 weeks of washout period the subjects switched they pills for cross-over study. The degree of DNA damage (assessed by tail DNA, tail length and tail moment) was not significantly changed with propolis intake or placebo intake. Similarly, total antioxidant status (TAS) remained at the same level regardless of the treatment. Erythrocyte catalase, glutathione peroxidase (GSH-Px), superoxide dismutase (SOD), plasma vitamin C and tocopherol level did not differ before and after propolis treatment, and did not differ between treatments. Putting all these results together, we would suggest that it is still too early to claim that propolis possess antioxidative activities.