• Journal of the Korean Vacuum Society
• /
• v.16 no.1
• /
• pp.65-73
• /
• 2007

The control of surface properties and spatial presentation of functional molecules within a microfluidic channel is important for the development of diagnostic assays, microreactors, and for performing fundamental studies of cell biology and fluid mechanics. Here, we present soft lithographic methods to create robust microchannels with patterned microstructures inside the channel. The patterned regions were protected from oxygen plasma by controlling the dimensions of the poly(dimethylsiloxane)(PDMS) mold as well as the sequence of fabrication steps. The approach was used to pattern a non-biofouling polyethylene glycol(PEG)-based copolymer or the polysaccharide hyaluronic acid(HA) within microfluidic channels. These non-biofouling patterns were then used to fabricate arrays of fibronectin(FN) and bovine serum albumin(BSA) as well as mammalian cells.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1632-1635
• /
• 2007

We developed a novel growth method of CNTs on metal substrate for device applications, deposited by a triode direct current plasma enhanced chemical vapor deposition (dc-PECVD). With resist-assisted patterning (RAP) method, we had grown CNTs on metal substrate, which were strongly bonded with metal substrate.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.910-912
• /
• 2006

Barrier ribs in plasma display panels (PDPs) function to maintain the discharge space between the glass plates as well as to prevent optical cross-talking. The barrier ribs currently employed are typically $300{\mu}m$ pitch, $110{\sim}120{\mu}m$ in height, with upper and lower widths of $50{\mu}m$ and $80{\mu}m$, respectively. It has been reported that barrier ribs can be fabricated by screen-printing, sand blasting, etching and photolithographic processes. In this study, photosensitive barrier rib pastes were formulated and systematically evaluated in terms of photolithographic process variables such as printing, drying, UV exposure, development and sintering. It was found that the use of UV absorbent, polymerization inhibitor and surfactant were very effective in controlling the width uniformity of barrier ribs in the photolithographic method of barrier rib patterning.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.823-827
• /
• 2005

Barrier ribs in the plasma display panel (PDP) function to maintain the discharge space between the glass plates as well as to prevent optical crosstalk. Patterning of barrier ribs is one of unique processes for making PDP. Barrier ribs could be formed by screen-printing, sand blasting, etching, and photolithographic process. In this work photosensitive barrier rib pastes were prepared by incorporating binder polymer, solvent, functional monomers photoinitiator, and barrier rib powder of which surface was treated with fumed silica particles. Studies on the function of materials for the barrier rib paste were undertaken. After optimization of paste formulation and photolithographic process, it was applied to the photosensitive barrier rib green sheet and was found that photolithographic patterning of barrier ribs could be formed with good resolution up to $110{\mu}m$ height and $60{\mu}m$ width after sintering.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.248.1-248.1
• /
• 2014

We present results from an experimental study of conductivity change of poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) film according to the surface structuring. We demonstrate that the patterned structure was enhanced with approximately five times conductivity in comparison with non structure of PEDOT:PSS film. In order to patterning, we have fabricated polystyrene (PS) colloidal monolayer as a template with sphere diameter of 780nm and 1.8um. Structure has honeycomb shape and it provide shorter path way to flowing of electron. Pattern size was controlled by PS diameter and varied by Transformer Coupled Plasma (TCP) etching system. Conductivity was converted from sheet resistance which measured by 4-point prove. Film thickness was derived using Field Emission Scanning Electron Microscopy (FE-SEM) images.

• Journal of the Microelectronics and Packaging Society
• /
• v.7 no.2
• /
• pp.1-6
• /
• 2000

X-ray lithography mask with SiC membrane and Ta absorber patterns has been fabricated using ECR plasma CVD, d.c. magnetron sputtering, and ECR plasma etching. The stress of stoichiometric SiC film was adjusted by rapid thermal annealing under $N_2$, ambient. Adjusting the working pressure during sputtering process resulted in a near-zero residual stress, reasonable density, and smooth surface morphology of Ta film. Cl-based plasma showed a good etching characteristics of Ta, and two-step etching process was implemented to suppress microloading effect fur sub-quarter $\mu\textrm{m}$ patterning.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.233-233
• /
• 2015

We report on a simple method for inducing physical and chemical property-gradient on nanoimprinted patterns by intensity-regulated plasma treatment under caved sample stage. As for the size gradient, a line pattern having a linewidth of 294.9 nm was etched to have gradually varying width from 277.4 nm to 147.9 nm. Modified pattern was proven to be adaptable to replica stamp for reversal patterning. To investigate the wettability gradient, imprinted nanopatterns were coated with fluoroalkylsilane to increase the hydrophobicity, and the surface was modified to have gradually varying wettability from hydrophobic to hydrophilic (contact angle was ${\sim}160^{\circ}$ to ${\sim}5^{\circ}$ on a single chip). This method is expected to be applicable to the selective adsorption of biological entities and hydrodynamic manipulation of liquid droplets for the pumpless microfluidics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.102-102
• /
• 2008

Sapphire (${\alpha}-Al_2O_3$) has been used as the substrate of opto-electronic device because of characteristics of thermal stability, comparatively low cost, large diameter, optical transparency and chemical compatibility. However, there is difficulty in the etching and patterning due to the physical stability of sapphire and the selectivity with sapphire and mask materials [1,2]. Therefore, sapphire has been studied on the various fields and need to be studied, continuously. In this study, the etching properties of sapphire substrate were investigated with various $CH_4$/Ar gas combination, radio frequency (RF) power, DC-bias voltage and process pressure. The characteristics of the plasma were estimated for mechanism using optical emission spectroscopy (OES). The chemical compounds on the surface of sapphire substrate were investigated using energy dispersive X-ray (EDX). The chemical reaction on the surface of the etched sapphire substrate was observed by X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the vertical and slope profiles.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.371.2-371.2
• /
• 2016

Graphene electronics is one of the promising technologies for the next generation electronic devices due to the outstanding properties such as conductivity, high carrier mobility, mechanical, and optical properties along with extended applications using 2 dimensional heterostructures. However, large contact resistance between metal and graphene is one of the major obstacles for commercial application of graphene electronics. In order to achieve low contact resistance, numerous researches have been conducted such as gentle plasma treatment, ultraviolet ozone (UVO) treatment, annealing treatment, and one-dimensional graphene edge contact. In this report, we suggest a fabrication method of one-dimensional graphene metal edge contact without using graphene exfoliation. Graphene is grown on Cu foil by low pressure chemical vapor deposition. Then, the graphene is transferred on $SiO_2/Si$ wafer. The patterning of graphene channel and metal electrode is done by photolithography. $O_2$ plasma is applied to etch out the exposed graphene and then Ti/Au is deposited. As a result, the one-dimensional edge contact geometry is built between metal and graphene. The contact resistance of the fabricated one-dimensional metal-graphene edge contact is compared with the contact resistance of vertically stacked conventional metal-graphene contact.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.369-369
• /
• 2012

The present work deals with selective deposition of copper on fluoropolymers patterned silicon (111) surfaces. The pattern of fluoropolymer was fabricated by nanoimprint lithography (NIL) and plasma reactive ion etching (RIE) was used to remove the residuals layers. Copper was electrochemically deposited in bare Si regions which were not covered with fluoropolymers. The patterns of fluoropolymers and copper have been investigated by scanning electron microscopy (SEM). In this work, we used two deposition methods. One is galvanic displacement method and another is electrodeposition. Selective deposition works in both cases and it shows applicability to other materials. By optimization of the deposition conditions can be achieved therefore this process represents a simple approach for a direct high resolution patterning of silicon surfaces.