• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.734-738
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• 2003

The addressing time should be reduced by modifying cell and/or driving method in order to replace the dual scan system by single scan and increase the luminance in large ac plasma display panel(PDP). In this paper, the relationships between of discharge cell structure and addressing time in ac PDP are investigated. It is found out that the addressing time was decreased with decreasing gap of ITO electrode and thickness of transparence dielectric layer on the front glass. The decrease rates were 4% per $10{\mu}m$ and 4% per $5{\mu}m$, respectively. Also in cases of decreasing height of barrier rip and thickness of white dielectric layer on the rear glass, addressing times were at the rate of 4% per $10{\mu}m$ and 4% per $2{\mu}m$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.739-742
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• 2003

We have compared 2-D and 3-D fluid simulation results of alternating current plasma display panel (AC-PDP) cell with experimentally measured two kinds of excited Xe species $Xe^{\ast}(^{3}P_{1})$ and $Xe^{\ast}(^{3}P_{2})$ characteristics. Although direct experimental access and diagnostics of the discharge in a PDP cell is problematic due to the small cell size, some of experimental technologies have made it possible to diagnose the behavior of excited Xe species [1, 2]. The simulation shows the similar characteristics to the experimental results in the excited Xe species density distribution and the number of excited Xe atoms in anode and cathode region. In certain cases, we obtained the arch-shaped discharge path between two sustain electrodes due to the additional pulse applied to address electrode analogous to experiment. This long path discharge induced higher luminous and discharge efficiency compared to the standard case.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.857-860
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• 2003

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The electrical and optical properties of both the ITO and ZnO:Al thin films were investigated as functions of substrate temperature, working gas pressure and deposition time. ITO and ZnO:Al films with the the present experimental conditions of temperature and pressure showed resistivity of $2.36{\times}10^{-4}{\Omega}-cm,\;9.42{\times}10^{-4}{\Omega}-cm$ and transmittance of 86.28%, 90.88% in the wavelength range of the visible spectrum, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.969-972
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• 2004

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. In this paper the effect of doping amounts of $Al_2O_3$ on the electrical, optical and morphological properties were investigated experimentally, The results show that the structural and electrical properties of the film are highly affected by the doping. The optimum growth conditions were obtained for films doped with 2 wt% of Al203 which exhibit a resistivity of $8.5{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 91.7 % for 840 nm in film thickness in the wavelength range of the visible spectrum.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.228-231
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• 2002

We report the effect of density of thin films on moisture adsorption and hydration of MgO thin film, usually used as a protective layer in AC-PDP After hydration, lots of hemispherical shaped clusters, $Mg(OH)_2$, formed on the surface of MgO thin films. However clusters formed on low-density thin films were bigger than those on high-density films. From ERD spectra, it seemed that the concentration of hydrogen was very high in the region 20 nm from the surface of MgO thin film. The low-density thin film had more hydrogen than high-density thin film. From simulation results of ERD and RBS it was found that hydration reaction also occurred in the inner part of the film. So diffusion of Mg atoms from the inner part of the film to the surface and $H_2O$ molecules from the surface to the inner part of the film is important. And because low density thin film has many short paths for diffusion of Mg atoms and $H_2O$ molecules, low-density thin film is more hydrated. So to suppress hydration of MgO thin films, high-density thin film is needed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.143-146
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and discharge power on the electrical, optical and morphological properties were investigated experimentally. The consideration on the effect of doping amounts of Al on the electrical and optical properties of ZnO thin film were also carried out. ZnO:Al films with the optimum growth conditions showed resistivity of $9.42{\times}10^{-4}\;{\Omeg}-cm$ and transmittance of 90.88% for 840nm in film thickness in the wavelength range of the visible spectrum.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2006.05a
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• pp.862-869
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• 2006

The purpose of this study is to propose the proper vocabularies for evaluating H.D TV set fan noise in residential condition. To achieve this goal, psycho-acoustic experiments were carried out with TV set fan noise modulated at specific frequency band. finally, a correlation analysis between vocabularies, and a factor analysis of psycho-acoustical responses were conducted. As a result of this study, followings are suggested. Analyzing the psycho-acoustical response corresponding to the various sound level, the higher the sound levels, the higher the response values were. It is estimated that the sound level determined psycho-acoustical responses. On the degree of response to fan noise, the initial level of negative feeling is located on $35{\sim}40$ dB(A). The factor of evaluating H.D. TV set fan noise has induced three the appropriate korean adjectives; Irritate, Monotonous, stuffy and dryness. The result of this study may be used to evaluate the acoustic threshold level for indoor noise or a basis for specifying the desired acoustic environment of dwellings.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.16 no.10 s.115
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• pp.1014-1023
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• 2006

The purpose of this study is to propose the proper vocabularies for evaluating H.D TV set fan noise. To achieve this goal, psycho-acoustic experiments were carried out with TV set fan noise modulated at specific frequency band. Finally, a correlation analysis between vocabularies, and a factor analysis of psycho-acoustical responses were conducted. As a result of this study, followings are suggested. Analyzing the psycho-acoustical response corresponding to the various sound level, the higher the sound levels, the higher the response values were. It is estimated that the sound level determined psycho-acoustical responses. On the degree of response to fan noise, the initial level of negative feeling is located on $35{\sim}40$ dB(A). The factor of evaluating H.D. TV set fan noise has induced three the appropriate korean adjectives; Irritate, Monotonous, stuffy and dryness. The result of this study may be used to evaluate the acoustic threshold level for indoor noise or a basis for specifying the desired acoustic environment of dwellings.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.749-753
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• 2006

The $ZnGa_2O_4$ phosphor thick films were fabricated using a screen printing method on Si(100) substrates at various sintering temperatures. The XRD patterns show that the $ZnGa_2O_4$ thick films have a (311) main peak and a spinel structure with increasing sintering temperatures. The particle sizes of $ZnGa_2O_4$ phosphor were about 100 nm and the thickness of $ZnGa_2O_4$ thick film was $10{\mu}m$. The CL and PL properties of $ZnGa_2O_4$ showed main peak of 420nm and maximum intensity at the sintering temperature of $900^{\circ}C$. These results indicate that $ZnGa_2O_4$ phosphor thick films hold promise for displays such as plasma display panel and field emission display.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.169-172
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• 2009

We developed ultra-accelerated quantum chemical molecular dynamics and characterization simulators for study and design of plasma display panel (PDP) related materials. By use of these simulators, realistic structure of PDP materials is drawn on the computer. Furthermore, based on the structures, various properties such as secondary electron emission coefficient are successfully evaluated. In this report, we will discuss the theoretical secondary electron emission coefficient for several protecting layer materials and the effect of surface structure on the properties based on the result of atomistic simulations.