• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.156-162
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• 2008

We report results on a study of inductively coupled plasma (ICP) etching of Parylene-C (poly-monochloro-para-xylylene) films using an $O_2$ gas. Effects of process parameters on etch rates were investigated and are discussed in this article from the standpoint of plasma parameter measurements, performed using a Langmuir probe and modeling calculation. Process parameters of interest include ICP source power and pressure. It was shown that major etching agent of polymer films was oxygen atoms O($^3P$). At the same time it was proposed that positive ions were not effective etchant, but ions played an important role as effective channel of energy transfer from plasma towards the polymer.

• Journal of Institute of Control, Robotics and Systems
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• v.4 no.4
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• pp.433-440
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• 1998

The purpose of this study is to provide an integrated process control system for plasma etching. The control system is designed to employ neural network for the modeling of plasma etching process and to utilize genetic algorithm to search for the appropriate selection of control input variables, and to provide a control chart to maintain the process output within a desired range in the real plasma etching process. The target equipment is the one operating in DRAM production lines. The result shows that the integrated system developed is practical value in the improved performance of plasma etching process.

• Journal of the Korean institute of surface engineering
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• v.45 no.4
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• pp.174-180
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• 2012

Low pressure inductively coupled plasma characteristics of argon and oxygen are numerically simulated for a 400 mm rectangular type system with a plasma fluid model. The results showed lower power absorption profile at the corner than a circular one in a 13.56 MHz driven 1.5 turn antenna system with a drift-diffusion and quasi-neutrality assumption. Ions controlled by electric field are more non-uniform than metastables and the power absorption profile of oxygen plasma is affected by horizontal gas flow pattern to show 25% lower power absorption at the pumping flange side. Oxygen negative ions which are generated in electron collisional dissociation of oxygen molecules was calculated as 0.1% of oxygen atoms with similar spatial profile.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.132-132
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• 2015

Virtual metrology (VM) model based on plasma information (PI) parameter for C4F8 plasma-assisted oxide etching processes is developed to predict and monitor the process results such as an etching rate with improved performance. To apply fault detection and classification (FDC) or advanced process control (APC) models on to the real mass production lines efficiently, high performance VM model is certainly required and principal component regression (PCR) is preferred technique for VM modeling despite this method requires many number of data set to obtain statistically guaranteed accuracy. In this study, as an effective method to include the 'good information' representing parameter into the VM model, PI parameters are introduced and applied for the etch rate prediction. By the adoption of PI parameters of b-, q-factors and surface passivation parameters as PCs into the PCR based VM model, information about the reactions in the plasma volume, surface, and sheath regions can be efficiently included into the VM model; thus, the performance of VM is secured even for insufficient data set provided cases. For mass production data of 350 wafers, developed PI based VM (PI-VM) model was satisfied required prediction accuracy of industry in C4F8 plasma-assisted oxide etching process.

• Journal of the Korean institute of surface engineering
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• v.44 no.1
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• pp.32-37
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• 2011

Numerical analysis is done to investigate the effect of surface treatment of a toilet on the cleanness. The surface treatment using plasma for the super-hydrophobic surface expects the self-cleaning effect of the toilet seat cover for preventing the droplets with a great quantity of bacteria during the toilet flushing after evacuation. In this study, the fluid analysis in the toilet during the flushing was performed by an ultrahigh-speed CCD camera with 1,000 frame/sec and the numerical modeling. And the spattering phenomenon from the toilet surface during urine was analyzed quantitatively by CFD-ACE+ with a free surface model and a mixed model of two fluids. If the surface tension of the toilet surface is weak, many urine droplets after collision bounded in spite of considering the gravity. The turbulence generated by the change of angle and velocity of urine and the variation of the collision phenomenon from toilet surface were modeled numerically.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.158-159
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• 2006

The resistance-capacitance (RC) delay of signals through interconnection materials becomes a big hurdle for high speed operation of semiconductors which contain multilayer interconnection layers. In order to reduce the RC delay, low-k materials will be used for inter-metal dielectric (IMD) materials. We have developed self-consistent simulation tool that includes neutral-species transport model, based on the relaxation continuum (RCT) model. We present the parametric study of the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with $N_2/H_2$ gas mixture that is known as promising one for organic low-k materials etching. We include the neutral transport model as well as plasma one in the calculation. The plasma and neutrals are calculated self-consistently by iterating the simulation of both species till a spatiotemporal steady state profile could be obtained.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.1
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• pp.113-122
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• 1996

As integrity of semiconductor device is increased, accurate and efficient modeling and recipe generation of semiconductor fabrication procsses are necessary. Among the major semiconductor manufacturing processes, dry etc- hing process using gas plasma and accelerated ion is widely used. The process involves a variety of the chemical and physical effects of gas and accelerated ions. Despite the increased popularity, the complex internal characteristics made efficient modeling difficult. Because of difficulty to determine the control input for the desired output, the recipe generation depends largely on experiences of the experts with several trial and error presently. In this paper, the optimal control of the etching is carried out in the following two phases. First, the optimal neural network models for etching process are developed with genetic algorithm utilizing the input and output data obtained by experiments. In the second phase, search for optimal control inputs in performed by means of using the optimal neural network developed together with genetic algorithm. The results of study indicate that the predictive capabilities of the neural network models are superior to that of the statistical models which have been widely utilized in the semiconductor factory lines. Search for optimal control inputs using genetic algorithm is proved to be efficient by experiments. (author). refs., figs., tabs.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.181-181
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• 2008

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.3
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• pp.331-336
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• 2013

In this paper, plasma modeling is achieved using fluid dynamics, thereby electron density is derived. The way proposes the key to overcoming the limitations of conventional researches which adopt simplified plasma model. The result is coupled with Maxwell-Boltzmann system in order to calculate scattering waves in various incident angle. The first part is dedicated to perform plasma modeling in dielectric barrier discharge(DBD) structure. Suzen-Huang model is adopted among various models due to the fact that it uses time independent variables to calculated potential and electron distribution in static system. The second part deals with finite difference time domain(FDTD) scheme which computes the scattered waves when the modulated Gaussian pulse is incident. Founded on it, radar cross section(RCS) is observed. Consequently, RCS is decreased by 1~2 dB with DBD plasma. The result is analogous to the RCS measurement in other researches.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.77-77
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• 2012

As interest has increased in the interaction between low-temperature plasmas and materials, the role of modeling and simulation of processing in plasma has become important in understanding the effects of charged particles and radicals in plasma applications. Thus in this presentation, we present the theoretical and experimental studies of electron impact cross section for plasma processing gas, such as plasma etching and deposition processes. Also, here the work conducted at the Data Center for Plasma Properties (DCPP) over last 7 years on the systematic synthesis and assessment of fundamental knowledge on low-energy electron interactions with plasma processing gases is briefly summarized and discussed.