• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.473-476
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• 2006

Microcavity plasma devices having characteristic dimensions below $100\;{\mu}m$ have been investigated as a candidate for the next generation of plasma displays. Arrays of inverted pyramid microcavity devices, fabricated in Si with emitting apertures of $(50\;{\mu}m)^2$ and designed for AC or bipolar excitation, demonstrate a luminous efficacy above 6 lm/W at pressures up to and beyond one atmosphere of Ne/Xe mixtures. Also the design of analogous microplasma devices in ceramic multilayer structures or plastic substrates is disccussed.

• 대한의용생체공학회:의공학회지
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• 제44권4호
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• pp.275-283
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• 2023

The demand for skincare has increased due to the end of the COVID-19 pandemic, leading to a focus on skincare devices and technologies designed to improve the delivery of cosmetics. Among these technologies, skincare medical devices that utilize plasma therapy (Plasma) and sonophoresis (Sono) are commonly used in dermatology clinics. However, there is still a lack of quantitative analysis for transdermal absorption effects of Plasma and Sono skincare medical devices. In this study, we quantified enhanced transdermal absorption effects of Plasma and Sono devices through in-silico and ex-vivo studies. The Sono treatment demonstrated an increased transdermal absorption effect, showing a 10~13% difference in penetration compared to the control group in the in-silico experiment, and 159% and 184% increase in the ex-vivo experiment. The Plasma treatment revealed increased transdermal absorption effects, with a 1.0~2.5% penetration difference in the in-silico experiment, and a 124% increase in the ex-vivo experiment compared to the control group. We also observed a synergistic effect from the combined treatment of Plasma and Sono, as indicated by the highest increases of 197% and 242% in penetration. Furthermore, we have determined the optimal device settings and treatment conditions for Plasma-Sono skincare medical devices. Notably, higher on/off durations (Intensity levels) and longer Sono treatments resulted in greater transdermal absorption effects.

• 한국표면공학회지
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• 제48권6호
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• pp.360-370
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• 2015

As the size of the semiconductor devices shrinks to nanometer scale, the importance of plasma etching process to the fabrication of nanometer scale semiconductor devices is increasing further and further. But for the nanoscale devices, conventional plasma etching technique is extremely difficult to meet the requirement of the device fabrication, therefore, other etching techniques such as use of multi frequency plasma, source/bias/gas pulsing, etc. are investigated to meet the etching target. Until today, various pulsing techniques including pulsed plasma source and/or pulse-biased plasma etching have been tested on various materials. In this review, the experimental/theoretical studies of pulsed plasmas during the nanoscale plasma etching on etch profile, etch selectivity, uniformity, etc. have been summarized. Especially, the researches of pulsed plasma on the etching of silicon, $SiO_2$, and magnetic materials in the semiconductor industry for further device scaling have been discussed. Those results demonstrated the importance of pulse plasma on the pattern control for achieving the best performance. Although some of the pulsing mechanism is not well established, it is believed that this review will give a certain understanding on the pulsed plasma techniques.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.3-6
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• 2002

Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure, flow rate, input power density) and various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimization.

• 한국표면공학회지
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• 제51권2호
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• pp.133-137
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• 2018

Plasma devices such as jets, pencils, and torches have been developed as new tools that help penetration of target agents and applied to plasma medicine. However, these devices cannot be used in a large area. Therefore, we introduced a flexible plasma device, which can be treated of large area and designed as bendable plasma. In additional, in vitro model based on agarose gel was prepared that can be show effectiveness in the depth of penetration. Plasma treatment conditions such as power, time and distance can be optimized on the agarose gel wound model. The chemical structure of changed polysaccharides was predicted due to reactive excited atoms and molecules, UV photons, charged particles and reactive oxygen and nitrogen species (RONS).

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.228-235
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• 2004

In this thesis, it is designed efficient electrode formation on the organic luminescent device. ITO electrode is treated with $O_2$plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. It is realized efficiently electron injection to aluminum due to introduce the quantum well in cathode. In the case of device inserted the buffer layer by using the plasma poiymerization after $O_2$plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic ate made in the omitting layer. Compared with the devices without buffer layer, the turn-on voltage was lowered by 1.0(V) doc to the introduction of buffer layer Since the quantum well structure is formed in front of cathode to optimize the tunneling effect, there is improved the power efficiency more than two times.

• International journal of advanced smart convergence
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• 제10권1호
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• pp.159-165
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• 2021

Electronic devices used in the mobile environments fabricated under the plasma conditions in high vacuum system. Especially for the development of advanced electronic devices, high quality plasma as the process conditions are required. For this purpose, the variable conductance throttle valves for controllable plasma employed to the high vacuum system. In this study, we analyzed the effects of throttle valve applications on vacuum characteristics simulated to obtain the optimum design modelling for plasma conditions of high vacuum system. We used commercial simulator of vacuum system, VacSim(multi) on this study. Reliability of simulator verified by simulation of the commercially available models of high vacuum system. Simulated vacuum characteristics of the proposed modelling agreed with the observed experimental behaviour of real systems. Pressure limit valve and normally on-off control valve schematized as the modelling of throttle valve for the constant process-pressure of below 10-3 torr. Simulation results plotted as pump down curve of chamber, variable valve conductance and conductance logic of throttle valve. Simulated behaviors showed the applications of throttle valve sustained the process-pressure constantly, stably, and reliably in plasma process.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권6호
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• pp.261-266
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• 2003

We investigated the effect of oxygen plasma treatment of indium-tin oxide(ITO) surface on the performance of electroluminescence(EL) devices. ITO surface treated oxygen plasma has been analyzed using atomic force microscope(AFM) and X-ray photoelectron spectroscopy(XPS), to investigate the relations between the properties of the ITO surface and the properties of the current-voltage-luminance(I-V-L) characteristics of the fabricated OLED with the structure of ITO(plasma treatment) / TPD / Alq$_3$/ Al. It is found that the oxygen plasma treatment of ITO anode improve the hole injection of the OLED due to the modification of the surface states. The treated ITO anode nay be low voltage with high luminance efficiency.

• 한국정보통신학회논문지
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• 제4권2호
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• pp.297-305
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• 2000

본 논문에서는 다양한 안테나 면적을 가지는 다결정실리콘(poly-Si) 및 폴리사이드(polycide) 게이트 물질을 게이트로 갖는 커패시터 및 n/p-MOS 트랜지스터를 사용하여 AAR(Antenna Area Ratio)의 크기에 따른 플라즈마 피해를 측정 및 분석하였다. 플라즈마 공정에 대한 신뢰도 특성을 조사하기 위해, MOS 소자의 게이트 물질을 달리하여 플라즈마 공정에 대한 초기 특성 및 F-N 스트레스와 hot carrier 스트레스 인가시의 n/p-MOSFET의 열화 특성을 측정한 결과 금속 AR에 의하여 플라즈마 공정의 영향을 받는 것으로 관찰되었다. 폴리사이드 게이트 구조가 다결정실리콘 게이트 구조보다 AAR에 따른 정전류 스트레스 인가시의 TDDB(Time Dependent Dielectric Breakdown)및 게이트 전압의 변화 등과 같은 신뢰성 특성에서 상당히 개선됨을 알 수 있었다. 이는 텅스텐 폴리사이드 형성 공정 중에 불소가 게이트 산화막에 함유되었기 때문인 것으로 설명할 수 있으며, 게이트 물질로 폴리사이드를 사용한 소자에서 플라즈마 영향을 줄일 수 있다는 사실이 차세대 MOS 소자의 게이트 박막으로 폴리사이드 게이트 박막을 활용할 수 있는 가능성을 확인하였다.

• E2M - 전기 전자와 첨단 소재
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• 제15권9호
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• pp.10-14
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• 2002

Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure flow rate input power density) and a various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimizations.