• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.499-499
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• 2012

This study was evaluated on etcher of capacitive coupled plasmas with OES (Optical Emission Spectroscopy) and impedance by VI probe that are widely used for process control and monitoring at semiconductor industry. The experiment was operated at conventional Ar and C4F8 plasma with variable change such as pressure and addition of gas (Atmospheric Leak: N2 and O2), RF, pressure, that are highly possible to impact wafer yield during wafer process, in order to observe OES and VI Probe signals. The sensitivity change on OES and Impedance by Vi probe was analyzed by statistical method to determine healthy of process. The main goal of this study is to understand unwanted tool performance to eventually improve productive capability. It is important for process engineers to actively adjust tool parameter before any serious problem occurs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.357-360
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• 1996

MgO protection layer in ac PDP(plasma display panel) prevents the dielectric layer from ion bombarding in discharge plasma. The MgO layer also has the additional important role in lowering the firing voltage due to a large secondary electron emission coefficient. Until now, the MgO protection layer is mainly prepared by E-beam evaporation. In this study, MgO protection layer is prepared on dielectric layer of ac PDP cell by reactive R.F magnetron sputtering with Mg target under various conditions of oxygen partial pressure. Discharge characteristics of PDP is also studied as a parameter of MgO preparation conditions. The sputtered MgO shows the better discharge characteristics compared with MgO deposited by E-beam evaporator.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 E
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• pp.1746-1748
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• 1997

The surface discharge type ac plasma display panel(ac PDP) is a flat display devices using gas discharge. In ac PDP, parallel electrodes covered with dielectric layer are on a substrates. The discharge current characteristics are affected by cell structure. In this study, the relationship between the principal design factor and discharge characteristics is discussed, based on experiment, and the current waveform is measured by voltage detector and storage O.S.C. as a parameter of design factor, e.g., electrode gap and width.

• ETRI Journal
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• 제31권6호
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• pp.703-708
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• 2009

Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film.

• Bulletin of the Korean Chemical Society
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• 제16권11호
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• pp.1023-1027
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• 1995

A comparative study of different torches in the Microwave Induced Plasma is reported. Three types of torches that have been used in this area are characterized and compared with each other. Especially, recently developed laminar flow torches have been optimized in design and analytical performances. The ratio of inner to outer tubes is found to be the most important parameter. As inner tube size increases, recirculating region also increases and consequently, sensitivity becomes better. An optimized laminar flow torch has been coupled to a gas chromatography and examined for halogen compounds. Detection limits are 25 pg s-1 for Cl and 12 pg s-1 for Br. These values are improved over the conventional laminar flow torch.

• 한국표면공학회지
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• 제42권6호
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• pp.256-259
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• 2009

The wafer surface temperature is an important parameter in the etching process which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the re-deposition of reaction products on feature surfaces. In this study, we investigated all of the effects of substrate temperature on the etch rate of $ZrO_2$ thin film and selectivity of $ZrO_2$ thin film over $SiO_2$ thin film in inductively coupled plasma as functions of $Cl_2$ addition in $BCl_3$/Ar plasma, RF power and dc-bias voltage based on the substrate temperature in range of $10^{\circ}C$ to $80^{\circ}C$. The elements on the surface were analyzed by x-ray photoelectron spectroscopy (XPS).

• 대한전자공학회논문지
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• 제26권11호
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• pp.1672-1678
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• 1989

Major problems preventing the device-quality GaAs/Si heterostructure are the lattice mismatch of about 4% and difference in thermal expansion coefficient by a factor of 2.64 between Si and GaAs. Ge is a good candidate for the buffer layer because its lattice parameter and thermal expansion coefficient are almost the same as those of GaAs. As a first step toward developing heterostructure such as GaAs/Ge/Si entirely by a home-built PAE (plasma-assisted epitaxy), Ge films have been deposited on p-type Si (100)substrate by the plasma assisted evaporation of solid Ge source. The characteristics of these Ge/Si heterostructure were determined by X-ray diffraction, SEM and Auge electron spectroscope. PAE system has been successfully applied to quality-good Ge layer on Si substrate at relatively low temperature. Furthermore, this system can remove the native oxide(SiO2) on Si substrate with in-situ cleaning procedure. Ge layer grown on Si substrate by PAE at substrate temperature of 450\ulcorner in hydrogen partial pressure of 10mTorr was expected with a good buffer layer for GaAs/Ge/Si heterostructure.

• Journal of Advanced Marine Engineering and Technology
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• 제24권3호
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• pp.43-51
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• 2000

The effect of time, temperature and gas composition on the case hardened thickness, hardness and nitride formation in the surface of ductile cast iron(GCD400) have been studied by micro-pulse plasma technique. Typically, external compound layer and internal diffusion layer which is much thicker than compound layer was observed in the nitride hardening of ductile cast iron. The relative amount kind of phases formed in the nitrided hardening changed with the change of nitriding conditions. Generally, only nitride phases such as $\gamma^'$($Fe_4N$), or $\varepsilon$($Fe_{2-3}N$) phases were detected in compound layer by XRD analysis. The thickness of compound layer increased with the increase of nitrogen content in the gas composition. The optimum nitriding temperature was obtained at $520^{\circ}C$. The nitrided hardening thickness parabolically with nitriding time(t) and thus, the case hardened layer(d) fits well with the typical parabolic equation ; d=kt. The material constant k for GCD400 nitrided at $520^{\circ}C$ was $0.04919\times10^3{\mu}m.hr^{-1/2}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.185-188
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• 2002

This paper describes the information for quantitative simulation of weakly ionized plasma. We should grasp the meaning of the plasma state condition to utilize engineering application and to understand materials of plasma state. In this paper, the drift velocity of electron in $SF_6+O_2$ mixture gas calculated for range E/N values l~900[Td] at the temperature is 300[$^{\circ}K$] and pressure is 1[Torr], using a set of electron collision cross sections determined by the authors and the values of drift velocity of electrons are obtained for TOF, PT, SST sampling method of Backward Prolongation by two term approximation Boltzmann equation method. It has also been used to predict swarm parameter using the values of cross section as input. The result of Boltzmann equation, the drift velocity of electrons, has been compared with pure $SF_6$, pure $O_2$ and mixture gas.

• Journal of Pharmaceutical Investigation
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• 제25권4호
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• pp.323-330
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• 1995

Ceftezole pivaloyloxymethyl ester(CFZ-PV) was synthesized to improve oral absorption and bioavailability of parent drug by esterification of ceftezole(CFZ) with chloromethyl pivalate. The successful synthesis of CFZ-PV was conformed by spectroscopic analysis. Partition coefficient studies showed that CFZ-PV is more lipophillic than CFZ. The pharmacokinetic characteristics of CFZ-PV and CFZ were compared following oral administrations of these compounds to rabbits. The amount of CFZ in plasma was determined with an HPLC method. The ester compound (prodrug) was not detected in plasma following oral administration of CFZ-PV, and although CFZ-PV had not microbiological activity in vitro, the plasma taken after oral administration of CFZ-PV had microbiological activity. From above observations, it was noted that CFZ-PV is rapidly hydrolyzed to CFZ in the body. And the oral absorption of CFZ-PV was increased by yielding 2-fold bioavailability rather than CFZ. Therefore, CFZ-PV could be a novel prodrug of CFZ which can improve the oral bioavailability of CFZ.