• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.531-534
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• 2004

In Recent, it became necessary to develope the technology about electrodeless fluorescent lamp according to demand of the electodeless fluorescent lamp system that used higher efficiency and advantage of long-lifetime. Especially, in the electordeless fluorescent lamp which used H-mode, efficiency of lamp is decided from matching parameter of antena and inverter. So it is of the utmost importance to design antena and inverter Therefore, this paper used a transformer principle for efficiency rising of electrodeless fluorescent lamp and interpreted an equivalent circuit, used an impedance analyzer in order to confirm a performance enhancement of lamp along design of antenna, and confirmed parameter characteristic of R, L, C, Z, Q-factor along a change of magnetic flux density. Also, this paper confirmed a luminance characteristic of electordeless lamp along parameter change with measuring optical characteristic along a change of magnetic flux density

• 공업화학
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• 제9권3호
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• pp.383-387
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• 1998

플라즈마 기체 종류($O_2$, $N_2$, and $O_2/N_2$)에 따른 저밀도 폴리에틸렌의 친수성 표면개질에 미치는 영향이 표면에 생성된 기능성 그룹과 물의 접촉각과의 관계로부터 조사되었다. XPS와 FT-IR ATR 분석을 통하여 플라즈마 처리된 LDPE 표면은 카보닐, 카복실 등의 산소 기능기들이 생성되었고, 질소 플라즈마 처리와 산소와 질소 혼합 기체 플라즈마 처리에 의해 표면에 질소 기능기가 생성됨이 확인되었다. rf-출력과 처리시간에 대한 접촉각 변화에서 질소 플라즈마 처리가 가장 작은 값을 나타내었고, 플라즈마 기체 종류에 관계없이 복합매개 변수 [(W/FM)t]가 520~550GJs/kg 부근에서 가장 효과적인 친수성 개질 반응이 이루어지는 최적조건임을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.231.1-231.1
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• 2015

Surface energy, being an important material parameter to control its interactions with the other surfaces plays a key role in bio-related application. Carbon films are found very promising due to their characteristics such as wear and corrosion resistant, high hardness, inert, low resistivity and biocompatibility. The present work deals with the deposition of carbon films using unbalanced facing target magnetron sputtering technique. The discharge characteristics were studied using optical emission spectroscopy and correlated with the film properties. Surface energy was investigated through contact angle measurement. The ID/IG ratio as calculated from Raman spectroscopy data increases with the increase in power density due to the higher number of sp2 clusters embedded in the amorphous matrix. The deposited films were smooth and homogeneous as observed by Atomic force microscopy having RMS roughness in the range of 1.74 to 2.25 nm. It is observed that electrical resistivity and surface energy varies in direct proportionality with operating pressure and has inverse relation with power density. The surface energy results clearly exhibited that these films can have promising applications in cell cultivation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• 한국연소학회:학술대회논문집
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• 한국연소학회 2006년도 제33회 KOSCO SYMPOSIUM 논문집
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• pp.266-271
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• 2006

Characteristic of partial oxidation of methane using arc-jet plasma by AC power is investigated. Arc-jet reactor used in this work is slightly modified from typical arc jet reactor so that it can make and sustain stable state of plasma. Methane conversion, selectivity of chemicals such as hydrogen and hydrocarbon materials in the product are analyzed. Parametric approach on the performance of the reactor or detail on the partial oxidation process is carried with $O_2/C$ ratio as parameter. In addition to the results, SED and arc length is changed to understand the effect of current-voltage correlation on the reforming performance and relative role of thermal process.

• 한국재료학회지
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• 제26권8호
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• pp.438-443
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• 2016

We developed an Al sputtering process by varying the plasma power, process temperature, and film thickness. We observed an increase of hillock distribution and average diameter with increasing plasma power, process temperature, and film thickness. Since the roughness of a film increases with the increase of the distribution and average size of hillocks, the control of hillock formation is a key factor in the reduction of Al corrosion. We observed the lowest hillock formation at 30 W and $100^{\circ}C$. This growth characteristic of sputtered Al thin films will be useful for the reduction of Al corrosion in the future of the electronic packaging field.

• Asian-Australasian Journal of Animal Sciences
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• 제12권8호
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• pp.1298-1309
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• 1999

The nutritional value of protein varies between feedstuffs. It is possible to feed animals using crystalline amino acids as a sole nitrogen source, but in practice only some limiting amino acids are added to the diet. In order to use feedstuffs efficiently, it is important to determine exact amino acid requirements. Reported values differ widely because the requirements are affected by various factors. In this report, therefore, the factors affecting amino acid requirements are reviewed as follows: 1) availability of dietary amino acids, conversion factors of nitrogen to protein, interaction of amino acids, and strain, sex and age of animals; 2) amino acid requirements for maximum performance and maintenance, usefulness of non-essential amino acids; 3) plasma amino acid concentration as a parameter to determine amino acid requirements; and 4) nitrogen excretion to reduce environmental pollution. These factors should be considered, it is to improve the dietary efficiency, which is to reduce excess nitrogen excretion for environmental pollution.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.798-800
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• 1998

(Ba,Sr)$TiO_3$ thin films were etched with $Cl_2$/Ar gas mixing ratio in an inductively coupled plasma (ICP) by varying the etching parameter such as f power, do bias voltage, and chamber pressure. The etch rate was $560{\AA}/min$ under Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2, rf power of 600 W, do bias voltage of 250 V, and chamber pressure of 5 mTorr, At this time, the selectivity of BST to Pt, $SiO_2$ was respectively 0.52, 0.43. The surface reaction of the etched (Ba,Sr)$TiO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2002년도 ICCAS
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• pp.46.5-46
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• 2002

As device dimension shrinks down to sub 100nm, it is increasingly important to monitor plasma states. Plasma etching is a key means to fine patterning of thin films. Many parameters are involved in etching and each parameter has different impact on process performances, including etch rate and profile. The uniformity of etch responses should be maintained high to improve device yield and throughput. The uniformity can be measured on any etch response. The most difficulty arises when attempting to characterize etched profile. Conventionally, the profile has been estimated by measuring the slope or angle of etched pattern. One critical drawback in this measurement is that this is unable to cap...

• 한국임상약학회지
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• 제6권2호
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• pp.14-18
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• 1996

This study was attempted to investigate the dissolution rate and the bioavailability after oral administration of commercially available norfloxacin tablets in rabbits. The dissolution test was conducted in artificial gastric juice using basket method with for norfloxacin preparations (A, B, C and D) which were chemically equivalent. The results were as follows ; The dissolution rate was increased in the order of four different brand A>D>B>C. Area under the plasma concentration curve and peak plasma concentration were increased in the order of brand A>D>B>C. Absorption rate constant and peak time were increased in the order of brand B>A>C>D, and there was a little difference in elimination rate constant and biological half-life. The correlation of the dissolution rate and relative bioavailability showed significant linear relationship. From the results of this experiment, the bioavailability of norfloxacin tablets in rabbits may be predicted from the results of dissolution rate studies.