• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.262.2-262.2
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• 2014

Plasma processing is an essential process for pattern etching and thin film deposition in nanoscale semiconductor device fabrication. It is necessary to maintain plasma chamber in steady-state in production. In this study, we determined plasma chamber state with residual gas analysis with self-plasma optical emission spectroscopy. Residual gas monitoring of fluorocarbon plasma etching chamber was performed with self-plasma optical emission spectroscopy (SPOES) and various chemical elements was identified with a SPOES system which is composed of small inductive coupled plasma chamber for glow discharge and optical emission spectroscopy monitoring system for measuring optical emission. This work demonstrates that chamber state can be monitored with SPOES and this technique can potentially help maintenance in production lines.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.31 no.10
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• pp.832-839
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• 2007

The geometry and dimensions of an expansion chamber are decisive factors in thermal puffer plasma chamber designs. Because they together dominate the temperature and speed at which the cooling gas from the chamber flows back through a flow channel to the arcing zone for the successful interruption of fault currents. In this study, we calculated the flow and mass transfer driven by arc plasma, and investigated the effects of a flow guide installed inside a thermal puffer plasma chamber. It is found that the existing cold gas of the chamber mixes with hot gases entrained from the arcing zone and is subjected to compression due to pressure build-up in the chamber. The pressure build-up with the flow guide is larger than that without due to a vortex which rotates clockwise around the chamber center. By the reverse pressure gradient, the mixing gas of the chamber flows back out for cooling down the residual plasma near current zero. In the case with the flow guide, the temperature just before current zero is lower than that without, and the Cu concentration with high electrical conductivity is also less than that without the flow guide.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.9-12
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• 2003

This paper describes a newly developed simulation environment for analysis and design of a plasma processing chamber based on first principles including complicated physical and chemical interactions of plasma, fluid dynamics of neutrals, and transport phenomena of particles. Capabilities of our simulator, named VIP-SEPCAD (Virtual Integrated Prototyping Simulation Environment for Plasma Chamber Analysis and Design), are demonstrated through a two dimensional simulation of an oxygen plasma chamber. VIP-SEPCAD can provide plasma properties such as spatiotemporal profiles of plasma density and potential, electron temperature, ion flux and energy, etc. By coupling neutral and particle transport models with a three moment plasma model, VIP-SEPCAD can also predict spatiotemporal profiles of chemically reactive species and particles exist in plasma.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.13-17
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• 2003

An adaptor is designed for chamber impedance measurement of plasma process. Copper rod, fixed board and compensation circuit are the major components of the adaptor. An adaptor can be to measure chamber impedance on time unless stopping a process and Data to measure can do the database. We can use it to a criteria data for a failure diagnosis. So developed adaptor could be used for diagnosis the plasma process chamber in semiconductor industry.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.59-63
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• 2009

This paper presents two dimensional simulation results of an inductively coupled $Ar/O_2$ plasma reactor. The effects of operating conditions on the plasma properties and the uniformity of atomic oxygen near the wafer were systematically investigated. The plasma density had the linear dependence on the chamber pressure, the flow rate of the feed gas and the power deposited into the plasma. On the other hand, the electron temperature decreased almost linearly with the chamber pressure and the flow rate of the feed gas. The power deposited into the plasma nearly unaffected the electron temperature. The simulation results showed that the uniformity of atomic oxygen near the wafer could be improved by lowering the chamber pressure and/or the flow rate of the feed gas. However, the power deposited into the plasma had an adverse effect on the uniformity.

• Journal of the Semiconductor & Display Technology
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• v.23 no.1
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• pp.52-55
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• 2024

In this paper, a state change study was conducted through Frequency Domain Reflectometry (FDR) technology for the process chamber of plasma equipment for semiconductor manufacturing. In the experiment, by direct connecting the network analyzer to the RF matcher input of the 300 mm plasma enhanced chemical vapor deposition (PECVD) chamber, S11 was measured in a situation where plasma was not applied, and the frequency domain reacting to the chamber state change was searched. Response factors to changes in the status, such as temperature, spacing of the heating chuck, internal pressure difference, and process gas supply state were confirmed. Through this, the frequency domain in which a change in the reflection value was detected through repeated experiments. The reliability of the measured micro-displacement was verified through reproducibility experiments.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.435-435
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• 2010

A inclined slot-excited plasma source is newly designed and constructed for higher flux HNB(Hyperthermal Neutral Beam) generation. The present source is different from the vertical SLAN(SLot ANtenna) sources [1] in two aspects. One is that the slots are inclined, and the other is that the magnetic field is configured to a cusp type. These modifications are intended to make the source plasma operated in sub-milli-torr pressure regime and as thin as possible, both of which is to get higher HNB flux by decreasing the re-ionization rate of the reflected atoms from the neutralizer [2]. The plasma is generated in a quartz tube of internal diameter 170 mm enclosed in a aluminum application chamber of larger diameter 250 mm. The microwave power is fed to the plasma chamber by 8 inclined slots cut into the application chamber wall. The slots are coupled the chamber to a WR280 waveguide wound around it to form a ring resonator. In order to make two slots $\lambda_g/2$ apart in phase, the adjacent slots are rotated in opposite directions. The rotation angle of the slots are set to $60^{\circ}$ from the chamber axis. Between the quartz chamber and the aluminum cylindrical chamber 8 NdFeB magnets are equally spaced and fixed to form the cusp magnetic field confinement and ECR (Electron Cyclotron Resonance) field. In this presentation, the magnetic and electromagnetic simulations, and the measured plasma parameters are given for both the inclined and the vertical slot-excited plasma sources. We also discuss how the sources can be tailored to suit better-performing HNB sources.

• Journal of the Speleological Society of Korea
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• no.78
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• pp.29-31
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• 2007

This paper is devoted to a study of the characterization of the plasma state. For the purpose of monitoring plasma condition, we experiment on reactive ion etching (RIE) process. Without actual etch process, generated oxygen plasma, measurement of plasma emission intensity. Changing plasma process parameters, oxygen flow, RF power and chamber pressure have controlled. Using the optical emission spectroscopy (OES), we conform to the unique oxygen wavelength (777nm), the most powerful intensity region of the designated range. Increase of RF power and chamber pressure, emission intensity is increased. oxygen flow is not affect to emission intensity.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2506-2511
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• 2007

The coupled simulation is performed to find out the interaction of arc plasmas with surrounding materials in a thermal puffer plasma chamber. In order to be more realistic, PTFE nozzle ablation and Cu electrode evaporation, which are caused by high temperature of arc plasmas, are considered together. Pressure rise and temperature inside the chamber generated during the whole arcing history are investigated with the applied currents. It is very important to define how thermal flow and mass transfer are processing between the arc plasma and surrounding materials for further understanding complex physics inside the chamber. It is concluded that the result might be very useful to understand the mechanism happened inside and to design thermal puffer plasma chambers, but further experimental studies are required to verify the results for the more practical applications.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.243-244
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• 2009

진공 chamber 내부 plasma를 외부에서 view port를 통한 확인 및 촬영보다 효율을 높이기 위하여 chamber 내부에 무선 camera (IVC : internal vacuum camera)를 삽입하여 더 세밀하게 plasma를 촬영하였고 view port로 확인이 불가능한 부분을 촬영 및 녹화하였다. 외부 view port로 확인할 수 없는 원거리 플라즈마 소스 (remote plasma source, RPS)와 in-line type의 chamber에서 동적 (dynamic) 증착이 이루어지는 substrate에 camera를 부착하여 이동 중 target 위쪽에 방전된 plasma, ICP (inductively coupled plasma) antenna를 진공 중 chamber 내부에서 촬영 및 녹화하였다.