• 대한기계학회논문집A
• /
• 제21권1호
• /
• pp.104-111
• /
• 1997

Accounting for the additional damages come out from non-proportional loading path effect, material damage according to crystal structure dependence was studied. Microscopic observations of damaged material by SEM(Scanning Electron Microscope) showed crystal structure dependence. Biaxial in-phase loaded specimens showed the slips of same direction, which pararell each other, but biaxial 90.deg. out-of-phase loaded specimens showed multiply crossed slips. S. H. Doong and D. F. Socie reported that wavy/planar or planar slip material showed the increase in the cyclic hardening level during non-proportional cycling. From these results, the additional hardening and non-proportional loading effects were related with slip mechanism, and the slip mechanism was related with crystal structure. In the present study, a damage mechanism which accounts for the non-proportional loading effect from crystal structure dependence was considered and applied to A17075-T651.

• Steel and Composite Structures
• /
• 제4권6호
• /
• pp.489-507
• /
• 2004

The flexibility of the connection between steel and concrete largely influences the global behaviour of the composite beam. Therefore the way the connection is modelled is the key issue in its structural analysis. Here we present a new strain-based finite element formulation in which we consider non-linear material and contact models. The computational efficiency and accuracy of the formulation is proved with the comparison of our numerical results with the experimental results of Abdel Aziz (1986) obtained in a full-scale laboratory test. The shear connectors are assumed to follow a non-linear load-slip relationship proposed by Ollgaard et al. (1971). We introduce the notion of the generalized slip, which offers a better physical interpretation of the behaviour of the contact and gives an additional material slip parameter. An excellent agreement of experimental and numerical results is obtained, using only a few finite elements. This demonstrates that the present numerical approach is appropriate for the evaluation of behaviour of planar composite beams and perfect for practical calculations.

• 전산구조공학
• /
• 제8권4호
• /
• pp.117-127
• /
• 1995

이 연구의 목적은 단조하중과 반복하중을 받는 철근콘크리트 면부재 해석에 대한 이방향성 회전 직교축 모델의 성능을 검토하기 위함이다. 여기서 다루는 구조부재는 철근에 의하여 적절히 보강된 보, 기둥, 보-기둥 접합부, 그리고 전단벽등으로 부재의 파괴가 인장균열후 압축파괴에 의하여 일어나는 부재이다. 보통 단조하중에 대하여 사용도는 이방향성 회전 직교축 모델을 반복하중에 대하여 확장하며, 철근과 부착의 기존 재료모델과 함꼐 유한요소해석에 사용한다. 단조하중에 대하여 이방향성 회전 직교축 모델을 사용한 해석 결과는 취성파괴를 나타내는 철근콘크리트보의 실험결과와 비교된다. 또한 반복하중을 받는 전단벽의 극한하중, 비선형 변형, 핀칭 현상 등에 대하여 실험결과와 비교된다.

• 한국정밀공학회지
• /
• 제22권8호
• /
• pp.84-91
• /
• 2005

The role of microstructure is quite significant in fretting of Ti-6Al-4V since its material properties depend strongly on crystallographic texture. In this study, we adopt crystal plasticity theory with a 2-D planar triple slip idealization to account fur microstructure effects such as grain orientation distribution, grain geometry, as well as $\alpha$ colony size. Crystal plasticity simulations suggest strong implications of microstructure effects at fretting contacts.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.31-31
• /
• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Design & Manufacturing
• /
• 제15권2호
• /
• pp.23-29
• /
• 2021

The specific strength of magnesium alloy is four times that of iron and 1.5 times that of aluminum. For this reason, its use is increasing in the transportation industry which is promoting weight reduction. At room temperature, magnesium alloy has low formability due to Hexagonal closed packed (HCP) structure with relatively little slip plane. However, as the molding temperature increases, the formability of the magnesium alloy is greatly improved due to the activation of other additional slip systems, and the flow stress and elongation vary greatly depending on the temperature. In addition, magnesium alloys exhibit asymmetrical behavior, which is different from tensile and compression behavior. In this study, a jig was developed that can measure the plane deformation behavior on the surface of a material in tensile and compression tests of magnesium alloys in warm temperature. A jig was designed to prevent buckling occurring in the compression test by applying a certain pressure to apply it to the tensile and compression tests. And the tensile and compressive behavior of magnesium at each temperature was investigated with the developed jig and DIC equipment. In each experiment, the strain rate condition was set to a quasi-static strain rate of 0.01/s. The transformation temperature is room temperature, 100℃. 150℃, 200℃, 250℃. As a result of the experiment, the flow stress tended to decrease as the temperature increased. The maximum stress decreased by 60% at 250 degrees compared to room temperature. Particularly, work softening occurred above 150 degrees, which is the recrystallization temperature of the magnesium alloy. The elongation also tended to increase as the deformation temperature increased and increased by 60% at 250 degrees compared to room temperature. In the compression experiment, it was confirmed that the maximum stress decreased as the temperature increased.