• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.647-651
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• 2005

We studied the external pressure-stable advanced frnge field switching (FFS) pixel design with 3 slit sructue. In this mode, a patterned pixel slit is partitioned into 3 areas, namely, two edges and a center, where the edge slit angle is larger than the center slit angle. Thus the reverse twist region in the pixel edge is reduced comparing to the conventional FFS mode so that the LC dynamics in this region becomes very stable. And also, when the external pressure is applied to the panel at the high voltage, the disclination lines (DLs) were barely intruded into active area. Therefore, the structure is use for the pen based system such as the tablet personal computer (PC), personal digital asistant (PDA).

• Journal of Sensor Science and Technology
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• v.17 no.1
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• pp.41-52
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• 2008

In this paper, a circuit analysis of the complementary CMOS active pixel and readout circuit is carried out. Complementary pixel structure which is different from conventional 3TR APS structure is consist of photo diode, reset PMOS, several NMOSs and PMOSs sets for complementary signals. Photo diode is modelled with Medici device program. HSPICE was used to analyze the variation of the signal feature depending on light intensity using $0.5{\mu}M$ standard CMOS process. Simulation results show that the output signal range is from 0.8 V to 4.5 V. This signal range increased 135 % output dynamic range compared to conventional 3TR pixel in the condition of 5 V power supply.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.309-313
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• 2011

In this study, we proposed a novel electrode structure for the fringe field switching (FFS) mode LCD and performed a three-dimensional computer simulation to calculate the optical transmittance for the new structure. In the simulation Erickson-leslie equation and Berreman $4{\times}4$ matrix were used for obtaining the director distribution profiles of liquid crystal molecules and the electro-optical characteristics, respectively. Considering the complexity of the motional equation of the liquid crystal molecules, FDM (finite difference method) was used as a numerical method. From the results, We revealed that the light transmission of the newly designed pixel structure is expended to the edge of the pixel electrode. We also confirmed that the light transmittance increased more than 13% compared to that of the conventional electrode structure.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.842-845
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• 2006

We studied for high transmittance panel technology in the FFS mode. We found that fine slit of pixel electrode makes increase of panel transmittance, and at the same time this structure has an issue which is increasing operation voltage (Vop). We analyzed the reason of high Vop in the FFS pixel with fine slit using two-dimensional LC analyses. Finally we suggest the solution which has high transmittance with suitable operating voltage.

• Journal of Sensor Science and Technology
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• v.22 no.4
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• pp.256-261
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• 2013

This paper presents an extension of the dynamic range in a complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) using a stacked photodiode and feedback structure. The proposed APS is composed of two additional MOSFETs and stacked P+/N-well/P-sub photodiodes as compared with a conventional APS. Using the proposed technique, the sensor can improve the spectral response and dynamic range. The spectral response is improved using an additional stacked P+/N-well photodiode, and the dynamic range is increased using the feedback structure. Although the size of the pixel is slightly larger than that of a conventional three-transistor APS, control of the dynamic range is much easier than that of the conventional methods using the feedback structure. The simulation and measurement results for the proposed APS demonstrate a wide dynamic range feature. The maximum dynamic range of the proposed sensor is greater than 103 dB. The designed circuit is fabricated by the $0.35-{\mu}m$ 2-poly 4-metal standard CMOS process, and its characteristics are evaluated.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.49-51
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• 2006

A new data line reduction driving method was developed for high pixel density LCoS microdisplays. Its pixel structures and its corresponding gate line waveform were proposed, too. This idea can fulfill the increasing demand for higher resolution LCoS. In this method, no additional AC power is dissipated, and no more horizontal line time is needed. So this method can be applied to the high resolution microdisplay devices. It prefers being applied to the reflective liquid crystal on silicon microdisplays because of the pixel structure asymmetry and PMOS transistor switches used.

• Journal of the Korea Society for Simulation
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• v.10 no.3
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• pp.59-70
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• 2001

Typical low-level image processing tasks require thousands of operations per pixel for each input image. Traditional general-purpose computers are not capable of performing such tasks in real time. Yet important features of traditional computers are not exploited by low-level image processing tasks. Since storage requirements are limited to a small number of low-precision integer values per pixel, large hierarchical memory systems are not necessary. The mismatch between the demands of low-level image processing tasks and the characteristics of conventional computers motivates investigation of alternative architectures. The structure of the tasks suggests employing an array of processing elements, one per pixel, sharing instructions issued by a single controller. In this paper we implemented various image processing filtering using the format converter. Also, we realized from conventional gray image process to color image process. This design method is based on realized the large processor-per-pixel array by integrated circuit technology This format converter design has control path implementation efficiently, and can be utilize the high technology without complicated controller hardware.

• Journal of Sensor Science and Technology
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• v.17 no.2
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• pp.114-119
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• 2008

Wide dynamic range active pixel sensor(APS) using a charge pump circuit has been designed by using 2-poly 4-metal $0.35{\mu}M$ standard CMOS technology. The structure of the proposed APS is similar to the structure of the conventional 3-Tr APS. The proposed unit pixel consists of one photodiode and three MOSFETs. Using a charge pump circuit, the dynamic range of the proposed APS is increased, compared to the conventional 3-Tr APS.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1327-1329
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• 2007

We developed a 4 inch (qVGA, 320x240) a-Si TFT LCD which has the function of color scanner. We have designed the novel pixel structure and got good scanning quality with minimum aperture loss. In this new pixel, the sensor capacitance was increased in double without decreasing the aperture loss.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.208-210
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• 2008

We have developed a LCD Panel that form storage capacitance for pixels between pixel electrode of bottom glass and common electrode of top glass. This method could make higher transmission and higher production yield than before by removing storage electrode line and capacitance on the bottom glass by simplifying bottom pixel structure.