• 한국군사과학기술학회지
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• 제14권1호
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• pp.132-138
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• 2011

A micromachined silicon accelerometer capable of surviving and detecting very high accelerations(up to 200,000 times the gravitational acceleration) is necessary for a high impact accelerometer for earth-penetration weapons applications. We adopted as a reference model a piezoresistive type silicon micromachined high-shock accelerometer with a bonded hinge structure and performed structural analyses such as stress, modal, and transient dynamic responses and sensor sensitivity simulation for the selected device using piezoresistive-structural coupled-field analysis. In addition, structural optimization was introduced to improve the performances of the accelerometer against the initial design of the reference model. The design objective here was to maximize the sensor sensitivity subject to a set of design constraints on the impact endurance of the structure, dynamic characteristics, the fundamental frequency and the transverse sensitivities by changing the dimensions of the width, sensing beams, and hinges which have significant effects on the performances. Through the optimization, we could increase the sensor sensitivity by more than 70% from the initial value of $0.267{\mu}V/G$ satisfying all the imposed design constraints. The suggested simulation and optimization have been proved very successful to design high impact microaccelerometers and therefore can be easily applied to develop and improve other piezoresistive type sensors and actuators.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2012년도 추계학술대회 논문집
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• pp.402-403
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• 2012

• 한국소음진동공학회논문집
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• 제23권12호
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• pp.1082-1089
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• 2013

3-Axis sensor measurement system is needed for measuring ride quality of elevator. But because 3-Axis piezoelectric accelerometer is expensive. We developed 3-Axis sensor system which is suitable for measuring ride quality of elevator using cheap MEMS sensor. There are two types of MEMS sensor that are piezoresistive and capacitive type. The excellence of piezoresistive type in characteristic of frequency response and noise is confirmed compare to capacitive type as a result of this paper's experiment and reference. 3-Axis system using MEMS sensor needs MEMS's proper frequency response characteristic. Additionally noise characteristic of sensor and circuit, stiffness of assembly are needed for deciding frequency range and accuracy of amplitude.

• 전자공학회논문지D
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• 제36D권7호
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• pp.26-33
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• 1999

4빔 브릿지형 압저항형 실리콘 가속도 센서에서 빔의 위치가 가속도 센서의 특성에 어떤 영향을 주는지 조사하기 위해서 빔의 위치가 서로 다른 3가지 형태의 가속도 센서를 FEM(finite element method)을 사용하여 해석하고, SDB(silicon direct bonding) 웨이퍼를 사용하여 RIE(reactive ion etching)와 KOH(potassium hydroxide) 애칭 공정으로 제조하였다. 세가지 형태의 가속도 센서에 대한 FEM 해석 경과, 첫 번째 공진 주파수와 Z축 감도는 세구조 모두 같게 나타났으나, 두 번째와 세 번째의 공진 주파수 및 X, Y축의 감도는 다른 것으로 나타났다. 제조된 가속도 센서의 특성을 살펴볼 때, 세 가지 형태의 센서는 비록 첫 번째 공진 주파수와 Z축 감도가 정확하게 일치하지는 않았지만, 첫 번째 공진 주파수는 1.3 ~ 1.7 KHz, Z축 감도는 5 V 인가시 180 ~ 220 lN/G, 타축감도는 1.7 ~ 2 %를 가지는 것으론 나타났다.