• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.764-768
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• 2016

To investigate excess $Na^+$ effect, $Bi_{0.5}(Na_{0.78+x}K_{0.22})_{0.5}TiO_3$ ($0{\leq}x{\leq}0.05$) (BNKT) ceramics were prepared by using a conventional solid-state reaction method. The structure and ferroelectric properties of BNKT ceramics were characterized by XRD (X-ray diffraction) and polarization dependence by external electric field. Also, the temperature dependence of dielectric constant and loss were studied. From these results, it was found that appropriate excess $Na^+$ into BNKT ceramics compensate the volatility and induce dense ceramics. The enhanced piezoelectric coefficient (158 pC/N) and depolarization temperature ($202^{\circ}C$) were obtained for the x=0.01 composition.

• Advances in materials Research
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• 제5권2호
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• pp.93-105
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• 2016

KNN-based ceramics modified with small amounts of $Bi_4Zr_3O_{12}$ (BiZ) has been synthesized using high-throughput experimentation (HTE). The results from X-ray diffraction show that for samples with base composition $(K_{0.5}Na_{0.5})NbO_3$ (KNN), the phase present changes from orthorhombic to pseudo-cubic with more than 0.2 mol% BiZ addition; for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.9}Ta_{0.1})O_3$ (KNNLT), the phase present changes from a mixture of orthorhombic and tetragonal symmetry to pseudo-cubic with more than 0.4 mol % while for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.86}Ta_{0.1}Sb_{0.04})O_3$ (KNNLST), the phase present is tetragonal with <0.3 mol% BiZ addition and transforms to pseudo-cubic with more dopant addition. The microstructures of the samples show that addition of BiZ decreases the average grain size and increases the volume of pores at the grain boundaries. The values of dielectric constant for KNN and KNNLT compositions increase slightly with BiZ addition while that for KNNLST decreases gradually with BiZ addition. The dielectric loss values are between 0.02 and 0.04 for KNNLT and KNNLST compositions while they are ~ 0.05 for KNN samples. The resistivity values increases with BiZ addition and values in the range of $10^{10}{\Omega}cm$ and $10^{12}{\Omega}cm$ are obtained. The piezoelectric charge coefficient ($d{^*}_{33}$) is highest for KNNLST samples and decreases gradually from ~400 pm/V to ~100 pm/V with BiZ addition.

• Smart Structures and Systems
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• 제21권3호
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• pp.287-303
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• 2018

Applications of energy harvesting from mechanical vibrations is becoming popular but the full potential of such applications is yet to be explored. This paper addresses this issue by considering an application of energy harvesting for the dual objective of serving as an indicator of structural health monitoring (SHM) and extent of control. Variation of harvested energy from an undamaged baseline is employed for this purpose and the concept is illustrated by implementing it for active vibrations of a pipe structure. Theoretical and experimental analyses are carried out to determine the energy harvesting potential from undamaged and damaged conditions. The use of energy harvesting as indicator for control is subsequently investigated, considering the effect of the introduction of a tuned mass damper (TMD). It is found that energy harvesting can be used for the detection and monitoring of the location and magnitude of damage occurring within a pipe structure. Additionally, the harvested energy acts as an indicator of the extent of reduction of vibration of pipes when a TMD is attached. This paper extends the range of applications of energy harvesting devices for the monitoring of built infrastructure and illustrates the vast potential of energy harvesters as smart sensors.

• 한국정보통신학회논문지
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• 제19권11호
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• pp.2697-2702
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• 2015

음악의 속도에 따라 운동하는 방법을 제공하는 기존의 연구에서는 사용자가 직접 재생되는 음악을 변경해주어야 하는 방법이 사용되었다. 그러나 사용자가 직접 음악 재생을 조절하는 방법에서 빠른 음악을 재생하고자 했을 때 사용자가 음악을 검색하다가 운동 흐름이 끊어지는 문제점이 있다. 본 논문에서는 웨어러블 스마트 신발의 사용자로부터 걸음 수를 측정하는 모듈을 아두이노 기반으로 설계하고 안드로이드 기반의 스마트폰으로 데이터를 전송하여 정확한 걸음 수를 측정 할 수 있도록 구현하였다. 그리고 GPS를 활용함으로써 걸음속도 및 이동 거리를 측정하여 보다 정확한 운동량을 측정할 수 있도록 하였다. 또한 이동거리에 따른 칼로리 소모량과 걸음 수에 따른 칼로리 소모량의 평균값을 측정해 기존의 제품보다 정확한 칼로리 소모를 측정하며, 걸음속도에 따라 음악 장르 변경 알고리즘을 적용시켜 사용자에게 운동 동기를 부여하고 동시에 운동효과를 증대시킬 수 있게 하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• Nano
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• 제13권11호
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• pp.1850131.1-1850131.19
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• 2018

In this paper, an electrochemical sensor for epinephrine (EP), a neurotransmitter was developed by anchoring molecularly imprinted polymeric matrix (MIP) on the surface of gold-coated quartz crystal electrode of electrochemical quartz crystal microbalance (EQCM) using starch nanoparticles (Starch NP) - reduced graphene oxide (RGO) nanocomposite as polymeric format for the first time. Use of EP in therapeutic treatment requires proper dose and route of administration. Proper follow-up of neurological disorders and timely diagnosis of them has been found to depend on EP level. The MIP sensor was developed by electrodeposition of starch NP-RGO composite on EQCM electrode in presence of template EP. As the imprinted sites are located on the surface, high specific surface area enables good accessibility and high binding affinity to template molecule. Differential pulse voltammetry (DPV) and piezoelectrogravimmetry were used for monitoring binding/release, rebinding of template to imprinted cavities. MIP-coated EQCM electrode were characterized by contact angle measurements, AFM images, piezoelectric responses including viscoelasticity of imprinted films, and other voltammetric measurements including direct (DPV) and indirect (using a redox probe) measurements. Selectivity was assessed by imprinting factor (IF) as high as 3.26 (DPV) and 3.88 (EQCM). Sensor was rigorously checked for selectivity in presence of other structurally close analogues, real matrix (blood plasma), reproducibility, repeatability, etc. Under optimized conditions, the EQCM-MIP sensor showed linear dynamic ranges ($1-10{\mu}M$). The limit of detection 40 ppb (DPV) and 290 ppb (EQCM) was achieved without any cross reactivity and matrix effect indicating high sensitivity and selectivity for EP. Hence, an eco-friendly MIP-sensor with high sensitivity and good selectivity was fabricated which could be applied in "real" matrices in a facile manner.

• Structural Engineering and Mechanics
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• 제69권4호
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• pp.439-455
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• 2019

This research deals with thermo-electro-mechanical buckling analysis of the sandwich nano-beams with face-sheets made of functionally graded carbon nano-tubes reinforcement composite (FG-CNTRC) based on the nonlocal strain gradient elasticity theory (NSGET) considering various higher-order shear deformation beam theories (HSDBT). The sandwich nano-beam with FG-CNTRC face-sheets is subjected to thermal and electrical loads while is resting on Pasternak's foundation. It is assumed that the material properties of the face-sheets change continuously along the thickness direction according to different patterns for CNTs distribution. In order to include coupling of strain and electrical field in equation of motion, the nonlocal non-classical nano-beam model contains piezoelectric effect. The governing equations of motion are derived using Hamilton principle based on HSDBTs and NSGET. The differential quadrature method (DQM) is used to calculate the mechanical buckling loads of sandwich nano-beam as well as critical voltage and temperature rising. After verification with validated reference, comprehensive numerical results are presented to investigate the influence of important parameters such as various HSDBTs, length scale parameter (strain gradient parameter), the nonlocal parameter, the CNTs volume fraction, Pasternak's foundation coefficients, various boundary conditions, the CNTs efficiency parameter and geometric dimensions on the buckling behaviors of FG sandwich nano-beam. The numerical results indicate that, the amounts of the mechanical critical load calculated by PSDBT and TSDBT approximately have same values as well as ESDBT and ASDBT. Also, it is worthy noted that buckling load calculated by aforementioned theories is nearly smaller than buckling load estimated by FSDBT. Also, similar aforementioned structure is used to building the nano/micro oscillators.

• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.505-512
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• 2023

This study investigated crystal structures, microstructures, and electric-field-induced strain (EFIS) properties of Bi-based lead-free ferroelectric/relaxor composites. Bi_1/2Na_0.82K_0.18)_1/2TiO₃ (BNKT) as a ferroelectric material and 0.78Bi_1/2(Na_0.78K_0.22)_1/2TiO₃-0.02LaFeO₃ (BNKT2LF) as a relaxor material were synthesized using a conventional solid-state reaction method, and the resulting BNKT2LF powders were subjected to high-energy ball milling (HEBM) after calcination. As a result, HEBM proved a larger average grain size of sintered samples compared to conventional ball milling (CBM). In addition, the increased sintering time led to grain growth. Furthermore, HEBM treatment and sintering time demonstrated a significant effect on EFIS of BNKT/BNKT2LF composites. At 6 kV/mm, 0.35% of the maximum strain (S_max) was observed in the HEBM sample sintered for 12 h. The unipolar strain curves of CBM samples were almost linear, indicating almost no phase transitions, while HEBM samples displayed phase transitions at 5~6 kV/mm for all sintering time levels, showing the highest S_max/E_max value of 700 pm/V. These results indicated that HEBM treatment with a long sintering time might significantly enhance the electromechanical strain properties of BNT-based ceramics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.293-293
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• 2014

Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

• 전기전자학회논문지
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• 제17권1호
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• pp.71-76
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• 2013

본 연구에서는 AlGaN/GaN HEMT (High electron mobility transistor)를 제작하고 채널폭의 감소에 따른 특성의 변화를 고찰하였다. AlGaN/GaN 이종접합구조 기반의 기판 위에 채널의 길이는 $1{\mu}m$, 채널 폭은 각각 $0.5{\sim}9{\mu}m$가 되도록 전자선 리소그라피 방법으로 트랜지스터를 제작하였다. 게이트를 형성하지 않은 상태에서 채널의 면저항을 측정한 결과 sub-${\mu}m$ 크기로 채널폭이 작아짐에 따라 채널의 면저항이 급격히 증가하였으며, 트랜지스터의 문턱전압은 $1.6{\mu}m$와 $9{\mu}m$의 채널폭에서 -2.85 V 이었으며 $0.9{\mu}m$의 채널폭에서 50 mV의 변화, $0.5{\mu}m$에서는 350 mV로 더욱 큰 변화를 보였다. 트랜스컨덕턴스는 250 mS/mm 내외의 값으로부터 sub-${\mu}m$ 채널에서 150 mS/mm로 채널폭에 따라 감소하였다. 또한, 게이트의 역방향 누설전류는 채널폭에 따라 감소하였으나 sub-${\mu}m$ 크기에서는 감소가 둔화되었는데 채널폭이 작아짐에 따라 나타는 이와 같은 일련의 현상들은 AlGaN 층의 strain 감소로 인한 압전분극 감소가 원인이 되는 것으로 사료된다.