• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.366-367
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• 2006

Different orientated SBN thin films were deposited by Ion Beam Sputtering, and electric properties were measured on each orientation. Ferroelectric $Sr_xBa_{1-x}Nb_2O_6$(SBN) has excellent electro-optic, photo-refractive, piezoelectric, pyroelectric properties. SBN thin film has been deposited by various method, of sol-gel, PLD, CVD, sputtering, etc.. To avoid lead pollution of Pb-system perovskite ferroelectric materials. SBN thin films were fabricated for pyroelectric IR sensor. Using the ceramic target of the same composition and Pt(100)/$TiO_2/SiO-2$/Si(100) substrate, crystallization and orientation behavior as well as electric properties of the films were examined. Seed layer and thin films thickness was controlled to observe the effect on preferred orientation. We measured I-V, C-V, P-E hysteresis to characterize electric-properties on each orientations.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.18 no.11
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• pp.1185-1191
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• 2008

This paper presents an approach to define an optimal piezoactuator length to actively control structural vibration. The optimal ratio of the piezoactuator length against the beam length when a pair of piezoceramic actuator and accelerometer is used to suppress unwanted vibration with direct velocity feedback(DVFB) control strategy is not clearly defined so far. It is well known that DVFB control can be very useful when a pair of sensor and actuator is collocated on structures with a high gain and excellent stability. It is considered that three different collocated Pairs of piezoelectric actuators (20, 50 and 100 mm long) and accelerometers installed on three identical clamped-clamped beams($30{\times}20{\times}1mm$). The response of each sensor-actuator pair requires strictly positive real(SPR) property to apply a high feedback gain. However the length of the piezoactuator affects the SPR property of the sensor-actuator response. Intensive simulation and experiment show the effect of the actuator length variation is strongly related with the frequency range of the SPR property. Thus an optimal length ratio was suggested to obtain relevant performance with a good stability under the DVFB strategy.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.11a
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• pp.476-481
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• 2004

This paper proposes the modeling scheme of the Miniature Universal Testing Machine (MUTM) composed of 36 thin-beam-type bimorph PZTs and the control algorithm to minimize the residual vibration of the MUTM in the dynamic testing of specimens. In the operation of the MUTM, hysteresis, residual displacement and vibration of it are major issues. From the analysis of the MUTM behaviors, the hysteresis is described by the curving fitting scheme with the function of an input voltage. The dynamic characteristics of the MUTM are identified by the frequency domain modeling technique base on the experimental data. The interest bandwidth is focused on 125-315HZ for effective modeling and control. For the robust vibration control of the MUTM, the sliding mode control and the Kalman filter as observer are proposed. The paper also proposes the best input signal type to operate the MUTM effectively. The feasibility of the proposed modeling scheme and control algorithm are tested and verified experimentally.

• Advances in nano research
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• v.13 no.2
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• pp.165-174
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• 2022

In the present study, a hybrid model of artificial neural network (ANN) and internet of things (IoT) is proposed to overcome the difficulties in deriving governing equations and numerical solutions of the dynamical behavior of the nano-systems. Nano-structures manifest size-dependent behavior in response to static and dynamic loadings. Nonlocal and length-scale parameters alongside with other geometrical, loading and material parameters are taken as input parameters of an ANN to observe the natural frequency and damping behavior of micro sensors made from nanocomposite material with piezoelectric layers. The behavior of a micro-beam is simulated using famous numerical methods in literature under base vibrations. The ANN was further trained to correlate the output vibrations to the base vibration. Afterwards, using IoT, the electrical potential conducted in the sensors are collected and converted to numerical data in an embedded mini-computer and transferred to a server for further calculations and decision by ANN. The ANN calculates the base vibration behavior with is crucial in mechanical systems. The speed and accuracy of the ANN in determining base excitation behavior are the strengths of this network which could be further employed by engineers and scientists.

• Smart Structures and Systems
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• v.32 no.6
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• pp.393-402
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• 2023

Recently, hybrid and electric vehicles have been actively developed to replace internal combustion engine (ICE) vehicles. However, their vibrations and noise with complex spectra cause discomfort to drivers. To reduce the vibrations transmitted through primary excitation sources such as powertrains, structural changes have been introduced. However, the interference among different parts is a limitation. Thus, active mounting systems based on smart materials have been actively investigated to overcome these limitations. This study focuses on diminishing the source movement when a structure with two active mounting systems is excited to a single sinusoidal and a multi-frequency signal, which were investigated for source movement reduction. The overall structure was modeled based on the lumped parameter method. Active vibration control was implemented based on the modeled structure, and a multi-normalization least mean square (NLMS) algorithm was used to obtain the control input for the active mounting system. Furthermore, the performance of the NLMS algorithm was compared with that of the quantification method to demonstrate the performance of active vibration control. The results demonstrate that the vibration attenuation performance of the source component was improved.

• Korean Journal of Optics and Photonics
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• v.17 no.3
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• pp.273-277
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• 2006

In this paper, we constructed the Littman type and fixed Littrow type tunable external-cavity diode laser systems. The laser output, which is the 0th-order diffracted beam from the diffraction grating in an external cavity, was the single longitudinal mode. Its FWHM was measured as less than 9MHz. With the diode driving current of 140mA and operating temperature of $25^{\circ}C$, the coarse tuning range of 5.375nm was measured for the Littman type, and of 13.65nm was measured for the fixed Littrow type. A fine tuning experiment in which an external mirror was rotated by a PZT driven by a sawtooth wave was performed, and its tuning range of 0.042nm was measured for both types. The fixed Littrow type tunable external-cavity diode laser system was an improvement on the conventional Littrow type tunable laser system in which the output direction varies due to the grating embedded in the mirror plate.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.13-19
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• 2001

We report on the fabrication and characterization of $Al_{0.3}Ga_{0.7}N$ HFETs with different barrier layer thickness which were grown using plasma-assisted molecular beam epitaxy (PAMBE). The barrier thickness of $Al_{0.3}Ga_{0.7}N$/GaN HFETs could be optimized in order to maximize 2 dimensional electron gas induced by piezoelectric effect without the relaxation of $Al_{0.3}Ga_{0.7}N$ layer. $Al_{0.3}Ga_{0.7}N$/GaN (20 nm/2 mm) HFET with 0.6 ${\mu}m$-long and 34 ${\mu}m$-wide gate shows saturated current density ($V_{gs}=1\;V$) of 1.155 A/mm and transconductance of 250 ms/mm, respectively. From high frequency measurement, the fabricated $Al_{0.3}Ga_{0.7}N$/GaN HFETs showed $F_t=13$ GHz and $F_{max}=48$ GHz, respectively. The uniformity of less than 5% could be obtained over the 2 inch wafer. In addition to the optimization of epi-layer structure, the relation between breakdown voltage and high frequency characteristics has been examined.

• Journal of IKEEE
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• v.17 no.1
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• pp.71-76
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• 2013

AlGaN/GaN HEMTs (High electron mobility transistors) with narrow channel were fabricated and the effect of channel scaling on the device were investigated. The devices were fabricated using e-beam lithography to have same channel length of $1{\mu}m$ and various channel width from 0.5 to $9{\mu}m$. The sheet resistance of the channel was increased corresponding to the decrease of channel width and the increase was larger at the width of sub-${\mu}m$. The threshold voltage of the HEMT with $1.6{\mu}m$ and $9{\mu}m$ channel width was -2.85 V. The transistor showed a variation of 50 mV at the width of $0.9{\mu}m$ and the variation 350 mV at $0.5{\mu}m$. The transconductance of 250 mS/mm was decreased to 150 mS/mm corresponding to the decrease of channel width. Also, the gate leakage current of the HEMT decreased with channel width. But the degree of was reduced at the width of sub-${\mu}m$. It was thought that the variation of the electrical characteristics of the HEMT corresponding to the channel width came from the reduced Piezoelectric field of the AlGaN/GaN structure by the strain relief.