• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1378-1383
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• 2003

A ferroelectric (called piezoelectric afterwards) wafer has been widely used as a key component of actuators or sensors of a layer type. According to recent researches, the piezoelectric wafer behaves in a nonlinear way under excessive electro-mechanical loadings. In the present paper, one-dimensional constitutive equations for the nonlinear behavior of a piezoelectric wafer are proposed based on the principles of thermodynamics and a simple viscoplasticity theory. The predictions of the developed model are compared with experimental observations.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.22-25
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• 2005

In this research, a wafar-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• Transactions of the Society of Information Storage Systems
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• v.2 no.2
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• pp.96-99
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• 2006

In this research, a wafer-level transfer method of cantilever away on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.501-502
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• 2006

In-plane type micro piezoelectric micro grippers with pneumatic lines for manipulation biological cells and micro parts were designed, fabricated, and characterized. Micro grippers were fabricated through the final micro-sanding process after wafer level bonding between the etched 4' Si wafer with pneumatic channels and 4' glass wafer. Displacements between two jaws of fabricated micro grippers were linearly increased with applying voltages to piezoelectric actuator. In the case of applying 80 V, the displacement between two jaws was $160{\mu}m$. Using fabricated micro grippers, manipulation tests for biological cell and micro parts with the sizes less than $100{\mu}m$ are in process.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.19 no.12
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• pp.1347-1355
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• 2009

This paper demonstrates the validity of spectral element analysis for modeling the high-frequency dynamic behaviors of a beam with a surface-bonded piezoelectric wafer through a laboratory test. In the spectral element analysis, the high-frequency electro-mechanical interaction can be considered properly with relatively low computational cost compared to the finite element analysis. In the verification test, a cantilever beam with a surface-bonded piezoelectric wafer is forced to be in steady-state motion by exerting the harmonic driving voltage signal on the piezoelectric wafer. A laser scanning vibrometer is used to obtain the overall dynamic responses of the structure such as resonance frequencies, the associated mode shapes, and frequency response functions up to 20 kHz. Then, these dynamic responses from the test are compared to those computed by the spectral element analysis. A two-dimensional finite analysis is conducted to obtain the asymptotic solutions for the comparison purpose as well.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1039-1044
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• 2002

Film Bulk Acoustic Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents an MMIC compatible suspended FBAR using SOI micromachining. It is possible to make a single crystal silicon membrane using a SOI wafer In fabricating active devices, SOI wafer offers advantage which removes the substrate loss. FBAR was made on the 12㎛ silicon membrane. Electrode and Piezoelectric materials were deposited by RF magnetron sputter. The maximum resonance frequency of FBAR was shown at 2.5GHz range. The reflection loss, K$^2$$\_$eff/, Q$\_$serise/ and Q$\_$parallel/ in that frequency were 1.5dB, 2.29%, 220 and 160, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1224-1231
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• 2003

This paper reports on the air-gap type thin film bulk acoustic wave resonator(FBAR) using ultra thin wafer with thickness of 50$\mu\textrm{m}$. It was fabricated to realize a small size devices and integrated objects using MEMS technology for flexible microsystems. To reduce a error of experiment, MATLAB simulation was executed using material characteristic coefficient. Fabricated thin FBAR consisted of piezoelectric film sandwiched between metal electrodes. Used piezoelectric film was the aluminum nitride(AlN) and electrode was the molybdenum(Mo). Thin wafer was fabricated by wet etching and dry etching, and then handling wafer was used to prevent damage of FBAR. The series resonance frequency and the parallel frequency measured were 2.447㎓ and 2.487㎓, respectively. Active area is 100${\times}$100$\mu\textrm{m}$$^2$.Q-factor was 996.68 and K$^2$$\_$eff/ was 3.91％.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.4 s.247
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• pp.350-357
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• 2006

A new valveless micropump for bi-directional application has been developed and tested. The micropump was fabricated on silicon and glass substrates by micromachining process. The micropump in this study consists of a membrane actuator, a pumping chamber, fluidic channels and two piezoelectric ceramic films. The channels and pumping chamber were etched on a glass wafer and the membrane was made on a silion wafer which is actuated by a piezoelectric ceramic (PZT) film. The geometry of the micropump was optimized by numerical analysis and the performance of the micropump was investigated by the experiments. The maximum flow rate was $323{\mu}L/min$ and the maximum back pressure was 294 Pa when the membrane actuator of $10{\times}10mm^2$ was driven at 130 Hz and 385 V.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.3
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• pp.15-19
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• 2003

In This paper, we developed 1.96 GHz air gap type FBAR BPF using ZnO as piezoelectric sputtered by RF magnetron at room temperature. FBAR BPF was fabricated by sputtering bottom electrode (Al), ZnO as piezoelectric and top electrode (Mo) on Si wafer one by one with RF magnetron sputter, then Si was dry etched to make an air hole. XRD test result of fabricated FBAR BPF showed that ZnO crystal was well pre-oriented as (002) and sigma value of XRC was 1.018. IL(Insertion loss) showed excellent result as 1 dB.

• Smart Structures and Systems
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• v.18 no.3
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• pp.471-484
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• 2016

Optical fiber sensors have been proven that they have the potential to detect high-frequency ultrasonic signals, in structural health monitoring field which generally refers to acoustic emission signals from active structural damages and guided waves excited by ultrasonic actuators and propagating in waveguide. In this work, the sensing properties of optical fiber sensors based on Mach-Zehnder interferometer were investigated in the metal plate. Analytical formulas were conducted first to explore the parameters affecting its sensing performances. Due to the simple and definable frequency component, the Lamb wave excited by the piezoelectric wafer was employed to study the sensitivity of the proposed optical fiber sensors with respect to the frequency, rather than the acoustic emission signals. In the experiments, according to above investigations, spiral shape optical fiber sensors with different size were selected to increase their sensitivity. Lamb waves were excited by a circular piezoelectric wafer, while another piezoelectric wafer was used to compare their voltage responses. Furthermore, by changing the excitation frequency, the tuning frequency characteristic of the proposed optical fiber sensor was also investigated experimentally.