• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.70-73
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• 2017

The dielectric constant and loss of poling/non-poling was measured in the $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ samples. The addition of $La^{3+}$ to the $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ did not cause a large change in grain size. But the addition of $La^{3+}$ did show transition temperature, which shifted toward low temperature in the $Pb[(Mg_{1/3}Ta_{2/3})Zr]O_3$ systems. In addition, the dielectric and pyroelectric properties (${\varepsilon}{\sim}20000$, $p{\sim}0.03C/m^2K$) of this system using $La^{3+}$ have been greatly improved. Pyroelectrics $Pb_{0.97}La_{0.02}(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ system was found to have a relatively high ferroelectric FOMs ($F_V{\sim}0.035m^2/C$, $F_D{\sim}0.52{\times}10^{-4}Pa^{-1/2}$) at room temperature. Spontaneous polarization showed a value of $0.27{\sim}0.35C/m^2$ in the composition added to $La^{3+}$. The piezoelectric constant ($d_{33}=350{\sim}490pC/N$) and electromechanical coupling factor ($k_P=0.25{\sim}0.35$) are obtained in $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ compositions with $La^{3+}$ dopant.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.05a
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• pp.121-122
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• 2012

Iron-excess gallium ferrite, $Ga_{0.6}Fe_{1.4}O_3$ (GFO), is known to have room-temperature ferromagnetic phases and potentially exhibit ferroelectricity as well [1]. But, leaky polarization-electric field (PE) hysteresis curves of the GFO thin film are hurdle to prove its spontaneous polarization, in other words, ferroelecticity. One of the reasons that the GFO films have leaky PE hysteresis loop is carrier hopping between $Fe^{2+}$ and $Fe^{3+}$ sites due to oxygen deficiency. We focus on reducing conducting current by substituting divalent cations at $Fe^{2+}$ sites. GFO thin films were grown epitaxially along b-axis normal to $SrRuO_3/SrTiO_3$ (111) substrates by pulsed laser deposition. Current density of the ion-substituted GFO thin films was reduced by $10^3$ or more. Ferroelectric properties of the ion-substituted GFO thin films were measured using macroscopic and microscopic schemes. In particular, local ferroelectric properties of the GFO thin films were exhibited and their remnant polarization and piezoelectric d33 coefficient were obtained.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.9
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• pp.1347-1356
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• 2022

In this paper, we investigate the properties of CoGe thin film-based galvanic cells as a function of their dimension (cell length, width, etc.) and show their application as sensors to Arduino-based IoT sensor networks to detect water contact. Because these CoGe thin film-based galvanic cells do not require mechanical strains or temperature gradients unlike piezoelectric and thermoelectric energy harvesters, we think that these thin film-based galvanic cells are more suitable for self-powered sensor networks demanding sustainable and robust energy harvesters. In the past, a sputter-deposited CoGe thin film has not been intensively investigated for energy harvesting appilcations. Thus, in this study, we perform a feasibility study of galvanic cells composed of a sputter-deposited CoGe thin film to see if they can be applied as potential self-powered sensors. We believe that this paper will be of great help in developing even more enhanced sensor networks.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.341-345
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• 2012

[Li0.055(K0.5Na0.5)0.945](Nb1-xTax)O3 (0.05 ≤ x ≤ 0.25) ceramics were prepared by the partial sol-gel (PSG) method to improve the microstructure homogeneity of Ta5+ ion and were compared to those prepared by the conventional mixed oxide (CMO) method. For the PSG method, Ta(OC2H5)5 was directly reacted with calcined [Li0.055(K0.5Na0.5)0.945]NbO3 powders and the specimens sintered at 1100 ℃ for 5 hrs showed a single phase with a perovskite structure. Compared to the specimens prepared by conventional mixed oxide powders, the relative ratio of tetragonal phase to orthorhombic phase of the sintered specimens prepared by Ta(OC2H5)5 was larger than that of the sintered specimens prepared by Ta2O5. The electromechanical coupling factor (kp), piezoelectric constant (d33) and dielectric constant (εr) of the sintered specimens were increased with Ta5+ content. These results could be attributed to the decrease of the orthorhombic-tetragonal polymorphic phase transition temperature (To-t), which could be evaluated by oxygen octahedral distortion. Strain of the sintered specimens prepared by the PSG method was higher than that of specimens prepared by the CMO method due to the increase of relative density. The effects of crystal structure on the strain characteristics of the specimens were also discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.412-419
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• 2024

Mn-doped Pb(In_1/2Nb_1/2)O₃-Pb(Mg_2/3Nb_1/3)O₃-PbTiO₃ (Mn:PIN-PMN-PT) single crystals, which exhibit improved phase transition temperatures and coercive field properties compared to Pb(In_1/2Nb_1/2)O₃-Pb(Mg_2/3Nb_1/3)O₃-PbTiO₃ (PIN-PMN-PT) single crystals, are expected to be utilized in high-power acoustic transducers. Bridgeman method, growing single crystals along the axial direction from melt, is most widely used method for single crystal growth with large size and high quality. However, single crystal boules grown by the Bridgeman method demonstrate a PT compositional variation, giving rise a distribution of crystal structure and material properties along the growing axis. To employ piezoelectric single crystals grown by the Bridgeman method for acoustic transducers, it is essential to investigate their overall property distribution. In this study, the compositional distribution and property variation of Mn:PIN-PMN-PT single crystals grown by the Bridgeman method was investigated. Measured compositional distribution of PT was from 29% to 32.5% in the Rhombohedral crystal region of the boule. Two types of specimen, [011]-poled Mn:PIN-PMN-29PT and Mn:PIN-PMN-32PT single crystals, were fabricated and tested to obtain full property variation at both ends of the Rhombohedral crystal region. The properties related to the 32 directional vibration mode and the properties related to high-power driving were measured to confirm the overall distribution of properties by composition.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.6
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• pp.457-460
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• 2005

Nano-sized titanium oxide and zirconium oxide powders were synthesized by hydrolysis of titanium isopropoxide $[Ti(OC_3H7)_4]$ and zirconium tetrachloride ($ZrC1_4$) via a sol-gel technique. Lead titanate powders were prepared by mixing $TiO_2$ precursors with PbO slurry made with dilute $NH_4OH$. Lead zirconate titanate powders were, then, synthesized by mixing $PbTiO_3$ with $ZrO_2$ powders. The goal of this research was to obtain the $PbZrTiO_3(PZT)$ powders and sintering these powders at low temperature. The $PbTiO_3$ and PZT powders after firing were analyzed by X-ray diffraction(XRD) and transmission electron microscopy(TEM) was utilized to observe the shape and size of the synthesized nano-particles. In the XRD pattern, the well-crystallized PZT phase could be obtained in consequence of firing at $900^{\circ}C$. SEM micrographs also showed that grains of PZT were relatively well grown with the size of the range of $2{\~}4{\mu}m$. The densified perovskite structure of $PbZrTiO_3$ could be obtained by sintering at temperature as low as $900^{\circ}C$. Characterization of the samples showed improved piezoelectric properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.304-304
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• 2010

최근 생활에 편리하며 휴대하기 좋은 전자기기들이 개발되고 있다. 휴대폰이나 MP3와 같은 전자기기들은 거의 필수품이라고 할 정도로 우리의 일상생활에 근접하여 있다. 그 종 대표적으로 휴대폰의 종류로 스마트폰과 같은 터치스크린을 이용한 사례는 점차 상승하고 있으며 시간이 지날수록 그 수요는 더욱 많아지고 있다. 때문에 몰입감 제공을 위하여 햅틱장치의 채용이 일반화 되고 있다. 햅틱장치란 가상환경이나 원거리에 있는 환경과 사용자가 상호 작용할 때 사용자에게 촉감이나 힘의 정보를 전달하여 주는 장치로 진동 및 회동 저항에 의해 사용자로 하여금 촉감들 느낄 수 있도록 하는 장치를 뜻한다. 즉, 현실감을 전달을 중점으로 하는 햅틱장치는 빠른 응답 속도와, 진동의 주파수와 크기는 독립적으로 제어가 가능해야 하며 기계적 수용기들을 직접적으로 자극할 수 있어야 한다. 하지만 모바일 햅틱장치의 경우 크기 및 소비전력의 문제로 모든 스펙을 만족하기에는 어려워 좀 더 한정적인 느낌을 제공할 수 없다. 현재까지 모바일 장치에서 햅틱 피드백을 위하여 진동모터나, 솔레노이드, 압전 액츄에이터 등이 많이 사용되어 지고 있다. 그 중 압전 액츄에이터는 입력에너지를 기계적 출력에너지로 변환되는 효과를 이용 한 것으로 압력 센서, 초음파 센서 등 많은 분야에서 응용되고 있으며 변위 범위는 작지만, 크기가 매우 작고 변위 정밀도가 높으며 발생력과 응답속도가 빠르다는 장점이 존재한다. 이를 이용한 햅틱 압전 엑츄에이터의 제작에 사용되는 압전 세라믹스는 높은 전기적 특성을 가질수록 더 졸은 효율을 가지며 이로 인하여 보다 좋은 전기적 특성을 가지는 압전 세라믹스를 필요로 한다. 현재 많이 사용되는 PZT계 세라믹스는 우수한 전기적 특성으로 많이 사용되고 있지만 Pb의 유독성으로 인한 환경문제로 Pb가 포함된 제품을 제한하고 있어 현재 Lead-free의 연구가 이루어지고 있다. Lead-free중 Ba$(Ti_{0.8}Zr_{0.2})O_3$(BZT)는 PZT계 세라믹스를 대체할 차세대 압전 재료로 주목받고 있다. 일반적으로 Lead-free의 압전계수($d_{33}$=100~300pC/N)는 비교적 낮은 값을 보이지만 BZT의 압전계수(BZT $d_{33}$~620pC/N)는 PZT계 세라믹스의 압전계수($d_{33}$=500~600pC/N)와 비교하여 부족하지 않은 압전계수를 보여주며 PZT를 대체할 재료로 주목받고 있다. 본 실험은 햅틱 압전 엑츄에이터용 무연 압전세라믹스의 제작을 위하여 Ba$(Ti_{0.8}Zr_{0.2})O_3-(Ba_{0.7}Ca_{0.3})-TiO_3$(BZT -BCT)의 조성으로 유전 및 압전 특성을 조사하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.306-306
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• 2008

기계적 에너지를 전기적 에너지로 변환하는 에너지 변환소자인 압전 세라믹스는 액추에이터, 변압기, 초음파모터, 초음파 소자 및 각종 센서로 응용되고 있으며, 그 응용분야는 크게 증가하고 있다. 최근에는 이러한 압전 소자를 앞으로 도래하는 ubiquitous, 무선 모바일 시대의 휴대용 전자제품, robotics, MEMS 분야 등의 대체 에너지원으로 응용하기 위한 연구가 진행되고 있다. 특히 인간의 걷기 운동 등과 같은 일상적인 동작으로 필요한 전력을 얻을 수 있고, 세라믹 소자를 이용하기 때문에 전자노이즈가 발생되지 않을 뿐 아니라 반영구적으로 사용할 수 가 있어서, 기존 이차전지를 대체 또는 보완 할 수 있는 방안도 검토되고 있다. PZT계 세라믹스는 높은 유전상수와 우수한 압전특성으로 전자세라믹스 분야에서 가장 널리 사용되어지고 있지만 $1200^{\circ}C$ 이상의 높은 소결온도 때문에 $1000^{\circ}C$ 부근에서 급격히 휘발되는 PbO로 인한 환경오염과 기본조성의 변화로 인한 압전 특성의 저하가 문제시 되고 있다. 또한 적층 세라믹스의 제작 시 구조적 특성상 내부전극이 도포된 상태에서 동시 소결이 필요한데, 융점이 낮은 Ag전극 대신 값비싼 Pd나 Pt가 다량 함유된 Ag/Pd, Ag/Pt 전극이 사용되고 있어 경제성이 떨어지는 단점을 갖게 된다. 순수 Ag 전극을 사용하거나 Ag의 비율이 높은 내부전극을 사용하기 위해서는 $900^{\circ}C$ 이하에서 소결되고 우수한 전기적 특성을 보이는 압전 세라믹스를 개발 하는 것이 필요하다. 따라서 본 연구에서는 압전특성이 우수한 $(Pb_{1-x}Cd_x)(Ni_{1/3}/Nb_{2/3})_{0.25}(Zr_{0.35}/Ti_{0.4})O_3$ 계의 조성을 설계하고, 소걸온도를 낮추기 위해서 2 단계 하소법을 이용하였다. 또한 $MnCO_3$, $SiO_2$, $Pb_3O_4$ 등을 소량 첨가하여 액상 소결 특성을 부여하여 소결 온도를 감소시키려는 시도도 하였다. 분말을 볼 밀링 (ball milling)을 통해 24시간 동안 혼합하고, 혼합된 분말은 $800^{\circ}C$에서 2시간 동안 하소하였다. 하소한 분말을 다시 72시간 동안 볼 밀링 하여 최종 분말을 얻었다. 최종 분말에 PVB를 첨가하여 직경 15mm의 디스크 형태로 성형한 후, 850~$975^{\circ}C$ 범위에서 온도를 변화시키면서 소결을 하였다. 최종 분말 및 소결된 시편을 XRD분석을 통하여 상을 확인하였고, SEM을 이용하여 미세조직을 관찰 하였다. 전기적 특성을 평가하기 위하여 두께를 1mm로 연마한 시편에 Ag 전극을 도포하여 $650^{\circ}C$에서 열처리한 후, 분극처리 하였다. 압전특성은 $d_{33}$-meter로 측정하였고, impedance analyzer를 이용하여 압전 특성 (전기기계결합계수 및 기계적품질계수)을 측정 하였다. 또한 강유전체 특성 평가 장치 (Precision-LC)를 이용하여 분극-전계 특성을 평가하였다. 이상의 연구를 통하여 소결 온도가 $900^{\circ}C$인 경우에서도 양호한 압전 특성을 확보 할 수 있었다.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1263-1269
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• 1999

An FBAR(Solidly Mounted Resonator) was fabricated using reflector layers which prohibit the penetration of bulk acoustic wave into substrate. The SMR consisted of top and bottom electrodes(Al films), a piezoelectric layer (ZnO film), reflector layers(W/$Si_2$ films) and Si substrate. The electrodes were deposited by dc sputtering. The piezoelectric layer and the reflector layers were deposited by rf magnetron sputtering. The control of crystallinity, microstructures and electric properties of each layer was essential for attaining the optimum FBAR characteristics. Under the best deposition conditions for FBAR devices, the ZnO films had highly c-axis preferred orientation(${\sigma}=2.17^{\circ}$), resistivity of $10^4\;{\omega}cm$, and surface roughness of 10.6 ${\AA}$. On the other hand, the surface roughness of W and $Si_2$ films was 16 ${\AA}$ and 33 ${\AA}$, respectively, and the resistivity of Al film was $5.1{\times}10^{-6}\;{\Omega}cm$. The SMR devices were fabricated by the conventional semiconductor processes. In the resonance conditions of the SMR, the series resonance frequency (fs) and the parallel resonance frequency(fp) were 1.244 GHz and 1.251 GHz, respectively and the quality factor(Q) was 1200.