• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.324-325
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• 2014

Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.215-216
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• 2013

The silicide is a compound of Si with an electropositive component. Silicides are commonly used in silicon-based microelectronics to reduce resistivity of gate and local interconnect metallization. The popular silicide candidates, CoSi2 and TiSi2, have some limitations. TiSi2 showed line width dependent sheet resistance and has difficulty in transformation of the C49 phase to the low resistive C54. CoSi2 consumes more Si than TiSi2. Nickel silicide is a promising material to substitute for those silicide materials providing several advantages; low resistivity, lower Si consumption and lower formation temperature. Nickel silicide (NiSi) nanowire (NW) has features of a geometrically tiny size in terms of diameter and significantly long directional length, with an excellent electrical conductivity. According to these advantages, NiSi NWs have been applied to various nanoscale applications, such as interconnects [1,2], field emitters [3], and functional microscopy tips [4]. Beside its tiny geometric feature, NW can provide a large surface area at a fixed volume. This makes the material viable for photovoltaic architecture, allowing it to be used to enhance the light-active region [5]. Additionally, a recent report has suggested that an effective antireflection coating-layer can be made with by NiSi NW arrays [6]. A unique growth mechanism of nickel silicide (NiSi) nanowires (NWs) was thermodynamically investigated. The reaction between Ni and Si primarily determines NiSi phases according to the deposition condition. Optimum growth conditions were found at $375^{\circ}C$ leading long and high-density NiSi NWs. The ignition of NiSi NWs is determined by the grain size due to the nucleation limited silicide reaction. A successive Ni diffusion through a silicide layer was traced from a NW grown sample. Otherwise Ni-rich or Si-rich phase induces a film type growth. This work demonstrates specific existence of NiSi NW growth [7].

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.166-176
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• 2010

The output characteristics of photovoltaic(PV) arrays are nonlinear and are affected by the temperature and solar insolation of cells. Maximum power point tracking(MPPT) methods are used to maximize PV array output power by tracking maximum power point(MPP) continuously. To increase the output efficiency of PV system, it is important to have more efficient MPPT. This paper proposes a novel maximum power point tracking(MPPT) control algorithm considering insolation to improve efficiency of PV system. The proposed algorithm is composed perturb and observe(P&O) method and constant voltage(CV) method. The proposed method is simulated under varying operating conditions. The effectiveness of these different MPPT methods is investigated thoroughly by PSIM simulation. The simulation results show that this proposed method provides better performance than conventional methods at a variable insolation without self-excited vibration of the power. By the simulation results, the validity of the proposed HB method is proved.

• The Transactions of the Korean Institute of Power Electronics
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• v.12 no.4
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• pp.300-309
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• 2007

In this paper, a grid-interactive photovoltaic (PV) system with the function of the power quality improvement is presented. The proposed system requires only one current-controlled voltage source inverter, which control the current flow at low total harmonic distortion and unity power factor, as well as simultaneously provide reactive power support. The proposed system operation has been divided into two modes (sunny and night). In night mode, the system operates to compensate the reactive power demanded by nonlinear or variation in loads. In sunny mode, the system performs power quality control (PQC) to reduce harmonic current and to improve power factor as well as maximum power point tracking (MPPT) to supply active power from the PV arrays, simultaneously. To verify the proposed system a comprehensive evaluation included simulation and experimental results are presented.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.8.1-8.1
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• 2011

Nanocrystalline titanium dioxide ($TiO_2$) materials have been widely used as an electron collector in DSSC. This is required to have an extremely high porosity and surface area such that the dye can be sufficiently adsorbed and be electronically interconnected, resulting in the generation of a high photocurrent within cells. In particular, their geometrical structures and crystalline phase have been extensively investigated as important issues in improving its photovoltaic efficiency. In this study, we present a new strategy to fabricate a photoelectrode having a periodic structured $TiO_2$ film templated from 1D or 3D polystyrene (PS) microspheres array. Monodisperse PS spheres of various radiuses were used for colloidal array on FTO glasses and two types of photoelectrode structures with different $TiO_2$ materials were investigated respectively. One is the igloo-shaped electrode prepared by $TiO_2$ deposition by RF-sputtering onto 2D microsphere-templated substrates. At the interface between the film and substrate, there are voids formed by the decomposition of PS microspheres during the calcination step. These holes might be expected to play the predominant roles as scattering spherical voids to promote a light harvesting effect, a spacious structure for electrolytes with higher viscosity and effective paths for electron transfer. Additionally the nanocrystalline $TiO_2$ phase prepared by the RF-sputtering method was previously reported to improve the electron drift mobility within $TiO_2$ electrodes. This yields solar cells with a cell efficiency of 2.45% or more at AM 1.5 illumination, which is a very remarkable result, considering its $TiO_2$ electrode thickness (<2 ${\mu}m$). This study can be expanded to obtain higher cell efficiency by higher dye loading through the increase of surface area or multi-layered stacking. The other is the inverse opal photonic crystal electrode prepared by titania particles infusion within 3D colloidal arrays. To obtain the enlargement of ordered area and high quality of crystallinity, the synthesis of titania particles coated with a organic thin layer were applied instead of sol-gel process using the $TiO_2$ precursors. They were dispersed so well in most solvents without aggregates and infused successfully within colloidal array structures. This ordered mesoporous structure provides the large surface area leading to the enough adsorption of dye molecules and have an light harvesting effect due to the photonic band gap properties (back-and-forth reflection effects within structures). A major advantage of this colloidal array template method is that the pore size and its distribution within $TiO_2$ photoelectrodes are determined by those of latex beads, which can be controlled easily. These materials may have promising potentials for future applications of membrane, sensor and so on as well as solar cells.

• Applied Chemistry for Engineering
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• v.4 no.2
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• pp.393-402
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• 1993

Redox flow secondary battery have been studied actively as one of the most promising electrochemical energy storage devices for a wide range of applications, such as electric vehicles, photovoltaic arrays, and excess power generated by electric power plants. In all-vanadium redox flow battery using solution of vanadium-sulfuric acid as a active material, the difficulty in developing an efficient ion selective membrane can still be identified. The asymmetric cation exchange membrane(M-30) as a separator of all-vanadium redox flow battery which were obtained by the reaction of chlorosulfonation for 30 minutes under the irradiation of UV, showed its superiority in the transport number of 0.94 and electrical resistivity of $0.5{\Omega}{\cdot}cm^2$. The base membrane were prepared by lamination a low density polyethlene film of $10{\mu}m$ thickness on polyolefin membrane(HIPORE 120). The electrical resistivity of M-30 membrane in real solution of vanadium-sulfuric acid was $3.79{\Omega}{\cdot}cm^2$ and it was similar to that of Nafion 117 membrane. Also the cell resistivity was $6.6{\Omega}{\cdot}cm^2$and lower than that of Nafion 117. In considertion of electrochemical properties and costs of membranes, M-30 membrane was better than that of Nafion 117 and CMV of Asahi glass Co. as a separator of all-vanadium redox flow battery.