• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.324-325
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• 2014

Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.215-216
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• 2013

The silicide is a compound of Si with an electropositive component. Silicides are commonly used in silicon-based microelectronics to reduce resistivity of gate and local interconnect metallization. The popular silicide candidates, CoSi2 and TiSi2, have some limitations. TiSi2 showed line width dependent sheet resistance and has difficulty in transformation of the C49 phase to the low resistive C54. CoSi2 consumes more Si than TiSi2. Nickel silicide is a promising material to substitute for those silicide materials providing several advantages; low resistivity, lower Si consumption and lower formation temperature. Nickel silicide (NiSi) nanowire (NW) has features of a geometrically tiny size in terms of diameter and significantly long directional length, with an excellent electrical conductivity. According to these advantages, NiSi NWs have been applied to various nanoscale applications, such as interconnects [1,2], field emitters [3], and functional microscopy tips [4]. Beside its tiny geometric feature, NW can provide a large surface area at a fixed volume. This makes the material viable for photovoltaic architecture, allowing it to be used to enhance the light-active region [5]. Additionally, a recent report has suggested that an effective antireflection coating-layer can be made with by NiSi NW arrays [6]. A unique growth mechanism of nickel silicide (NiSi) nanowires (NWs) was thermodynamically investigated. The reaction between Ni and Si primarily determines NiSi phases according to the deposition condition. Optimum growth conditions were found at $375^{\circ}C$ leading long and high-density NiSi NWs. The ignition of NiSi NWs is determined by the grain size due to the nucleation limited silicide reaction. A successive Ni diffusion through a silicide layer was traced from a NW grown sample. Otherwise Ni-rich or Si-rich phase induces a film type growth. This work demonstrates specific existence of NiSi NW growth [7].

• 조명전기설비학회논문지
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• 제24권4호
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• pp.166-176
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• 2010

태양전지의 출력 특성은 비선형이고 온도와 일사량에 많은 영향을 받는다. 최대전력점 추종 제어는 태양광 발전의 출력을 최대로 하기 위해 사용되는 제어기법이다. 태양광발전 시스템의 출력 및 효율을 증가 시키기 위해 더욱 우수한 최대전력점 추종 제어기법이 필요하다. 본 논문에서는 태양광 발전 시스템의 효율을 개선하기 위해 일사량을 고려한 새로운 최대전력점 추종 제어 알고리즘을 제시한다. 제시한 알고리즘은 종래의 P&O방법과 CV 방법을 혼합한 것이며, PSIM 시뮬레이터를 통하여 종래의 MPPT 알고리즘과 다양한 일사량 조건에서 성능시험을 비교하였다. 제시한 알고리즘은 종래의 알고리즘에 비해 출력의 자려진동없이 다양한 일사량에서 우수한 성능을 나타냈다. 이로서 본 논문에서 제시한 HB 방법의 최대전력점 추종 제어 알고리즘의 타당성을 입증하였다.

• 전력전자학회논문지
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• 제12권4호
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• pp.300-309
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• 2007

본 논문에서는 전력품질개선기능을 갖는 계통연계형 태양광 발전시스템을 제안한다. 제안된 시스템은 전류제어형 전압원인버터 하나만을 사용하여 단위역률, 고조파저감 그리고 무효전력보상을 동시에 수행한다. 제안된 시스템의 동작모드는 2개의 모드로 구분할 수 있다. 야간모드에서는 PQC를 통해 부하에서 발생하는 무효전력을 보상한다. 주간모드에서는 고조파 저감 및 역률개선을 위한 PQC를 수행하면서 동시에 태양광의 최대전력을 발전하는 MPPT를 수행한다. 본 연구에서 제안한 시스템의 유용성을 확인하기 위해 시뮬레이션과 실험을 수행하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.8.1-8.1
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• 2011

Nanocrystalline titanium dioxide ($TiO_2$) materials have been widely used as an electron collector in DSSC. This is required to have an extremely high porosity and surface area such that the dye can be sufficiently adsorbed and be electronically interconnected, resulting in the generation of a high photocurrent within cells. In particular, their geometrical structures and crystalline phase have been extensively investigated as important issues in improving its photovoltaic efficiency. In this study, we present a new strategy to fabricate a photoelectrode having a periodic structured $TiO_2$ film templated from 1D or 3D polystyrene (PS) microspheres array. Monodisperse PS spheres of various radiuses were used for colloidal array on FTO glasses and two types of photoelectrode structures with different $TiO_2$ materials were investigated respectively. One is the igloo-shaped electrode prepared by $TiO_2$ deposition by RF-sputtering onto 2D microsphere-templated substrates. At the interface between the film and substrate, there are voids formed by the decomposition of PS microspheres during the calcination step. These holes might be expected to play the predominant roles as scattering spherical voids to promote a light harvesting effect, a spacious structure for electrolytes with higher viscosity and effective paths for electron transfer. Additionally the nanocrystalline $TiO_2$ phase prepared by the RF-sputtering method was previously reported to improve the electron drift mobility within $TiO_2$ electrodes. This yields solar cells with a cell efficiency of 2.45% or more at AM 1.5 illumination, which is a very remarkable result, considering its $TiO_2$ electrode thickness (<2 ${\mu}m$). This study can be expanded to obtain higher cell efficiency by higher dye loading through the increase of surface area or multi-layered stacking. The other is the inverse opal photonic crystal electrode prepared by titania particles infusion within 3D colloidal arrays. To obtain the enlargement of ordered area and high quality of crystallinity, the synthesis of titania particles coated with a organic thin layer were applied instead of sol-gel process using the $TiO_2$ precursors. They were dispersed so well in most solvents without aggregates and infused successfully within colloidal array structures. This ordered mesoporous structure provides the large surface area leading to the enough adsorption of dye molecules and have an light harvesting effect due to the photonic band gap properties (back-and-forth reflection effects within structures). A major advantage of this colloidal array template method is that the pore size and its distribution within $TiO_2$ photoelectrodes are determined by those of latex beads, which can be controlled easily. These materials may have promising potentials for future applications of membrane, sensor and so on as well as solar cells.

• 공업화학
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• 제4권2호
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• pp.393-402
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• 1993

레독스-흐름 2차전지는 발전소의 잉여 전력, 태양전지 및 전기자동차 등 응용 분야가 넓은 유망한 에너지 저장 방법의 하나이다. 활성물질로소 바나듐-황산 수용액을 이용하는 전바나듐 레독스-흐름 전지에서 효율적인 이온 선택 성막의 개발은 아직도 문제점으로 남아 있다. 전바나듐 레독스-흐름 전지용 격막으로서 기초막에 UV를 조사하면서 30분간 chlorosulfonation 시킨 비대칭 양이온 교환막(M-30)이 운반율 0.94 막저항 $0.5{\Omega}{\cdot}cm^2$로 가장 좋았다. 기초막은 pololefin막(HIPORE 1200)에 $10{\mu}m$두께의 저밀도 폴리에틸렌 막을 접착시켜 제조되었다. 실제 바나듐-황산 수용액에서의 막저항도 $3.79{\Omega}{\cdot}cm^2$로 Nafion 117막과 비슷하였고, 셀저항율도 $6.6{\Omega}{\cdot}cm^2$로 Nafion 117막보다 낮았다. 막의 전기화학적 물성치와 가격 등을 고려할 때 전바나듐 레독스-흐름 전지의 격막으로서 M-30막이 Nafion 117막과 Asahi초자의 CMV막보다 우수하였다.