• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.403-409
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• 1999

The surface state of Ar plasma-exposed Fe doped SI-InP have been investigated by photoreflectance (PR). From Ar plasma-exposed InP with 30 W for 10sec, the PR signals include a peak $(E_{Ar})$ that is located at 1.336 eV. We think that this peak was originated shallow level related to $V_In-V_P$. And we compared this level with the level obtained by surface photovoltage spectroscopy (SPV) measurement. The result of the PR agrees well with that from SPV. Additionally, Ar plasma induced phosphorus vacancy is related to shallow level. Therefore, the change of surface electric field are attributed to the shallow level. This level is caused by the existence of phsophorus vacancy on InP surface.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.127-132
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• 1996

We measured photoreflectance spectrum characteristics of InGaAs grown by MBE method on semi-insulating GaAs. The PR signal splitting of substate and epilayer was observed. The band gap energy was about 1.40 eV. It make to 8 meV difference when it is fitted by Pan's equation. The reason is stress on the interface, which is due to lattice mismatch between epilayer and substate . We became to know that reason influence crystalline on growing sample. In InGaAs epilayer, temperature dependency is low. The efficiency of photo absorption is high and activate over 200K. In this case when it is annealed at $400^{\circ}C$ below growing temperature, PR signal splitting is remarkable and crystalline is inhanced.

• Laser Solutions
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• v.7 no.3
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• pp.47-50
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• 2004

In this research, we investigated the characteristic of $ZnS_{0.24}Se_{0.76}/GaAs$ heterostructure by using photoreflectance sprctroscopy(PR). The oscillations observed above the 1.43 eV range were attributed Franze-Keldysh effect. The interface electric filed of $GaAs/ZnS_{0.24}Se_{0.76}\;is\;2.153{\times}104\;V/cm$.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.114-115
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• 1998

Photoreflectance (pR) measurement h have been employed to study the uniformity of G GaAs!Si 3" wafer. The PR shows the energy of l light and heavy hole even at room temperature. F From the observed energy of LH and HH, it can b be seen that the center of the wafer is more s stressed than the 뼈ge. On the basis of biaxial t tensile stress the higher and lower. transitions are a attributed to heavy and light hole respectively.vely.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.141-144
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• 2007

We investigated variation of the photoreflectance(PR) signals for n-GaAs furnace and laser annealed. The samples were annealed by using ArF excimer laser(5 min, $30{\sim}50\;W$) and furnace(5 min $400{\sim}700^{\circ}C$). The PR signals(top point) measured from the ArF excimer laser annealed sample showed 1.42 eV and furnace annealed sample showed 1.43 eV. This result is ArF excimer laser annealed sample was uniform annealed surface and inter state.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.359-363
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• 1997

We have investigated the surface characteristics of n-GaAs (100) treated with Ar plasma (40 W, 5~120 sec) by photoreflectance (PR) measurement. With increasing Ar plasma treatment time, the intensity of $E_0$ peak observed to the minimum at 5 sec. The surface electric field ($E_0$), net carrier concentration ($N_P-N_A$), and surface state density ($Q_{SS}$ are $1.05{\times}10^5V/cm$ and $1.31{\tiems}10^{17}cm^{-3}$ and $1.64{\times}10^{-7}C/m^2$, respectively. These values were about 57.1, 81.4 and 56.9% smaller than those of bulk n-GaAs. On the other hand, the concentration of compensation centers ($N_A$) was maximum with value of $5.75{\times}10^{17}cm^{-3}$ at 5 sec. And penetration depth of defects generated after treated with Ar plasma was about 450 $\AA$ from surface.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.341-347
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• 1998

We analyzed photoreflectance (PR) characterization of the $Al_xGa_{1-x}As$ epilayer grown by molecular beam epitaxy (MBE) method. The band-gap energy $(E_0)$ satisfying low power Franx-Keldysh (LPFK) due to GaAs buffer layer is 1.415 eV, interface electricall field $(E_i)$ is 1.05$\times$$10^4$V/cm, carrier concentration (N) is $1.3{\times}10^{15}\textrm{cm}^{-3}$. In PR spectrum intensity analysis at 300 K the $A^*$ peak below $(E_0)$ signal is low and distorted because of residual impurity in sample growth. The trap characteristic time ${\tau}_i$ of GaAs buffer layer is about 0.086 ms, and two superposed PR signal near 1.42eV consist of the third derivative signal of chemically eteched GaAs substrate and Franz-Keldysh oscillation (FKO) signal due to GaAs buffer layer.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.249-254
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• 1997

We investigated characteristics of Fe-doped semi-insulating InP by means of photoreflectance(PR) measurement. The band gap energy($E_0$) and broadening parameter($\Gamma$) from PR signals at 300K are 1.336 eV and 11.2 meV, respectively. As the temperature is decreased from 300 to 80 K, PR signals are varied from an overlapped shape of exciton and 2-dimensional band gap transitions(300 K) to that of exciton transition(80 K). We calculated Varshni coefficient($\alpha=0.94\pm$0.07 meV/K, $\beta=587\pm$35.2 K) and Bose-Einstein coefficient ($a_B=33.6{\pm}2.02meV$ , $\theta=165\pm$33K). After annealing of isothermal and isochronism crystallinity of InP is found to be excellent when annealed at $300^{\circ}C$ for 10~20 min, qualitatively.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.334-340
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• 1998

Photoreflectance (PR) measurents have been performed on $In_xGa_{1-x}As/GaAs$ grown by molecular beam epitaxy (MBE). Bandgap $(E_0)$ of $In_xGa_{1-x}As$ epilayer measured from PR was separated as heavy-hole $(E_0(HH))$ and light-hole $(E_0(LH))$ by strain effect. The compositions and the strains of epilayer were obtained from the energy value of $E_0(HH)$ and from energy difference of $E_0(HH)$ and $E_0(LH)$, respectively. In addition, the PR signal of $E_0(LH)$ was diminished below 160 K. The interface electric field (E) of InGaAs/GaAs was increased from $0.75{\times}10^5$ V/cm to $2.66{\times}10^5$ V/cm as In composition increased, which was calculated from Franz-Keldysh oscillation (FKO) peaks. As the temperature dependence of the PR signal at x=0.09 sample, we obtained Varshni and Bose-Einstein coefficients.

• Journal of the Korea Society of Computer and Information
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• v.27 no.8
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• pp.211-218
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• 2022

In this paper, a computer simulation program was developed to interpret the results measured by photoreflectance spectroscopy. The developed program is implemented so that the user can easily change the factors required for optical modulation characteristic interpretation, and the result of the value can be checked simultaneously with the actual measurement result. The results obtained by photoreflectance spectroscopy are obtained by mixing a third derivative function form (TDFF) modulated around a bandgap with a Franz-Keldysh oscillation (FKO) signal due to an electric field at a surface and an interface higher than the bandgap. Through the computer simulation program, the optical characteristics that appear in the GaSb Epi layer formed as a single layer were analyzed, and very useful results were obtained by specializing in optical modulation analysis. In addition, a Fast Fourier Transform (FFT) analysis tool was added to facilitate frequency characteristics analysis of FKO.