The Characteristics Study of Photoreflectance of $\textrm{In}_{0.1}\textrm{Ga}_{0.1}\textrm{As}$ Epi-layer Grwon by Molecular BEAM Epitaxy
(MBE로 성장시킨 $\textrm{In}_{0.1}\textrm{Ga}_{0.1}\textrm{As}$ 에피층의 Photoreflectance 특성 연구)
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- Korean Journal of Materials Research
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- v.9 no.5
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- pp.515-519
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- 1999