• Bulletin of the Korean Chemical Society
• /
• v.31 no.7
• /
• pp.1881-1886
• /
• 2010

Hydrothermal reaction of zinc(II) salts with 5-sulfoisophthalic acid monosodium salt ($NaO_3SC_6H_3$-1,3-(COOH)$_2$, $NaH_2$-SIP) and 1,10-phenanthroline (phen) led to two new compounds, [Zn(phen)$_3$$\cdot2H_2SIP\cdot4H_2O$ (1) and [Zn(phen)$_2(H_2O)_2]\cdot2H_2SIP\cdot2H_2O$ (2). They were characterized by element analysis, IR spectroscopy, thermalgravimetric analysis (TGA), X-ray powder diffraction (XRD), and single-crystal X-ray diffraction. Both compounds 1-2 represent the first example of Zn/phen/SIP system. The Zn (II) ion in 1 is six-coordinated by six nitrogen atoms from three phen molecules, and the $H_2SIP^-$ ligands engage in the formation of hydrogen bond. The Zn(II) ion in 2 is coordinated by four nitrogen atoms from two phen molecules and two oxygen atoms from two water molecules. Moreover, both 1 and 2 are assembled into 3D supramolecular architectures by hydrogen bonds (O-H$\ldots$O) and $\pi-\pi$ interactions. Solvent water molecules occupying voids of the compounds serve as receptors or donors of the extensive O-H$\ldots$O hydrogen bonds.

• Journal of the Korean Chemical Society
• /
• v.67 no.4
• /
• pp.236-240
• /
• 2023

Non-concentration quenching EuGa₂S₄ and Eu₂Ga₂S₅ phosphors, in which the concentration of Eu²⁺ activator ion is 100%, were synthesized by a solid state reaction at temperature range from 800 to 1050 ℃. The wavelength of maximum intensity (λ_max) of EuGa₂S₄ and Eu₂Ga₂S₅ phosphors are 546 and 581 nm, respectively. An examination of the X-ray diffraction patterns and photoluminescent properties of EuGa₂S₄ and Eu₂Ga₂S₅ phosphors revealed that EuGa₂S₄ and Eu₂Ga₂S₅ phosphors were formed at lower temperature range (800~900 ℃) and higher temperature range (1000~1050 ℃), respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.609-612
• /
• 1999

Organic electroluminescent(EL) devices have received a great deal of attention due to their potential application as full-color displays. They are attractive because of their capability of multicolor emission, ease of fabrication, and operation at a low driving voltage. In this study, single and multiple quantum-well structures consisting of Eu(TTA)$_3$(bpy) complex well layer sandwiched between triphenyldiamine derivative (TPD) layers were fabricated and their photoluminescent electroluminescent characteristics were also investigated. Sharp emission at 616 nm has been observed from the Eu complex in multilayer, single and multiple quantum-well structures. Details on the explanation of electrical properties of these structures will be discussed.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2012.05a
• /
• pp.68.1-68.1
• /
• 2012

The best part of graphene is - charge-carriers in it are mass less particles which move in near relativistic speeds. Comparing to other materials, electrons in graphene travel much faster - at speeds of $10^8cm/s$. A graphene sheet is pure enough to ensure that electrons can travel a fair distance before colliding. Electronic devices few nanometers long that would be able to transmit charge at breath taking speeds for a fraction of power compared to present day CMOS transistors. Many researches try to check a possibility to make it a perfect replacement for silicon based devices. Graphene has shown high potential to be used as interconnects in the field of high frequency electrical devices. With all those advantages of graphene, we demonstrate characteristics of electrical and optical properties of graphene such as the effect of graphene geometry on the microwave properties using the measurements of S-parameter in range of 500 MHz - 40 GHz at room temperature condition. We confirm that impedance and resistance decrease with increasing the number of graphene layer and w/L ratio. This result shows proper geometry of graphene to be used as high frequency interconnects. This study also presents the optical properties of graphene oxide (GO), which were deposited in different substrate, or influenced by oxygen plasma, were confirmed using different characterization techniques. 4-6 layers of the polycrystalline GO layers, which were confirmed by High resolution transmission electron microscopy (HRTEM) and electron diffraction analysis, were shown short range order of crystallization by the substrate as well as interlayer effect with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups on its layers. X-ray photoelectron Spectroscopy (XPS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation, and Fourier Transform Infrared spectroscopy (FTIR) and XPS analysis shows the changes in oxygen functional groups with nature of substrate. Moreover, the photoluminescent (PL) peak emission wavelength varies with substrate and the broad energy level distribution produces excitation dependent PL emission in a broad wavelength ranging from 400 to 650 nm. The structural and optical properties of oxygen plasma treated GO films for possible optoelectronic applications were also investigated using various characterization techniques. HRTEM and electron diffraction analysis confirmed that the oxygen plasma treatment results short range order crystallization in GO films with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups. In addition, Electron energy loss spectroscopy (EELS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation and XPS analysis shows that epoxy pairs convert to more stable C=O and O-C=O groups with oxygen plasma treatment. The broad energy level distribution resulting from the broad size distribution of the $sp^2$ clusters produces excitation dependent PL emission in a broad wavelength range from 400 to 650 nm. Our results suggest that substrate influenced, or oxygen treatment GO has higher potential for future optoelectronic devices by its various optical properties and visible PL emission.

• Korean Journal of Materials Research
• /
• v.13 no.3
• /
• pp.150-154
• /
• 2003

Amorphous carbon nitride films were deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition technique (PECVD) using $CH_4$and $N_2$as reaction gases. The growth and film properties were investigated while the gas ratio and the working pressure were changed systematically. At 1 Torr working pressure, an increase in the $N_2$partial pressure results in a significant increase of the deposition rate as well as an apparent presence of C ≡N bonding, while little affecting the microstructure and amorphus nature of the films. In the case of changing the working pressure at a fixed $N_2$partial pressure of 98%, a film grown at a medium pressure of $1${\times}$10^{-2}$ Torr shows the most prominent C=N bonding nature and photoluminescent property.

• Journal of the Korean Institute of Navigation
• /
• v.25 no.4
• /
• pp.435-442
• /
• 2001

A new technique to grow a manganese-doped zinc-sulfide(ZnS：Mn) has been proposed using the repeated deposition of the Hot Wall method. The optical characteristics and crystallinity for the ZnS and ZnS：Mn thin films deposited on a quartz glass substrate by the method were investigated. Also, The ZnS：Mn thin film elcetroluminescent devices were fabricated by the method to study luminescence characteristics. All films showed (111)-oriented cubic structure. By the repeated deposition, the deposition rates were decreased, and the optical characteristics and crystalline properties were improved, which clarifies that the method is effective to deposit the thin films with good crystallinity Futhermore, the crystallinity was more improved by the doping of Mn. Only one peak emission at around 585nm originating from Mn luminescent center is observed In the photoluminescent and electroluminescent spectra of ZnS：Mn films and the luminance of the ZnS：Mn-based thin film electroluminescent devices was obtained below 60cd/$m^2$ . The optical and crystalline properties, luminescence characteristics are discussed in terms of the effects of the repeated deposition and Mn-doping.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.10a
• /
• pp.56-58
• /
• 2000

We have synthesized the new blue electroluminescent material, Bis(3-N-ethylcarbazolyl)cyanoisophthalidene(BECCIP), and characterized its properties by UV/visible absorption, photoluminescent(PL) and electroluminecent(EL) spectrum. This material is well vacuum-deposited for thin film and has dear surfaced thin film property. The BECCIP shows blue PL and EL spectra at around at 485nm.

• Journal of the Korean Ceramic Society
• /
• v.43 no.8 s.291
• /
• pp.451-457
• /
• 2006

The solid solutions of ${\alpha}-Si_3N_4$, i.e. ${\alpha}$-sialons, are represented by a general formula of $M_x(Si,Al)_{12}(O,N)_{16}$, in which metal ions (M) dissolve into interstitial sites to stabilize the structure. Processing methods for the fabrication of ${\alpha}/{\beta}$-sialon composites, ${\alpha}-sialon/{\beta}Si_3N_4$ composites, refractory or tough ${\alpha}$-sialon ceramics have been developed to tailor the mechanical properties. Translucent and photoluminescent properties have been investigated recently. A number of applications of ${\alpha}$-sialon ceramics as engineering and optical ceramics are also presented.

• Bulletin of the Korean Chemical Society
• /
• v.28 no.11
• /
• pp.1963-1966
• /
• 2007

Carbosilane dendrimers with silafluorenyl groups on the periphery were prepared by the reaction of 2,2'- dilithiumbiphenyl and dichlorosilyl groups on the carbosilane dendrimers at low temperature. The 1st to 4th generation of dendrimers with silafluorenyl groups were obtained with high yields and the products were purified by column chromatography. The unified properties of the dendrimers were measured by gel permeation chromatography (GPC) and displayed very low and regular polydispersity index (PDI) value. The silafluorenyl moieties on dendritic periphery accepted the potassium fluoride ions which were stabilized by criptand [222], and it proved strong photoluminescent properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.174-176
• /
• 2000

We have synthesized the new blue electroluminescent material, Bis(3-N-ethylcarbazolyl)cyanoisophthalidene(BECCIP), and characterized its properties by UV/visible absorption, photoluminescent(PL) and electroluminecent(EL) spectrum. This material is well vacuum-deposited far thin film and has clear surfaced thin film property. The BECCIP shows blue PL and EL spectra at around at 485nm.