• 조명전기설비학회논문지
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• 제24권4호
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• pp.10-16
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• 2010

본 논문에서는 ZnO와 $Ga_2O_3$ 분말을 1 : 1의 mole비로 혼합하고 여기에 Mn을 첨가하여 Ar 주입 상태와 진공 상태에서 조성된 $ZnGa_2O_4$ : Mn을 합성하였다. 제작된 $ZnGa_2O_4$ : Mn의 발광 스펙트럼 관찰을 하여 산소의 성분 변화가 발광 특성에 미치는 영향을 설명하였다. 또한 저온의 Photoluminescence(PL) 스펙트럼으로부터 Mn의 site symmetry가 발광 스펙트럼에 미치는 영향을 설명하였다.

• Current Optics and Photonics
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• 제5권1호
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• pp.72-76
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• 2021

The polarized micro-photoluminescence spectrum was analyzed to investigate the anisotropic localized states in a single GaAs quantum ring. An energy difference of ~0.1 meV was observed from the perpendicularly polarized spectrum measured by a pair of linear analyzers. Spectral dependence of the polarized emission was also characterized in terms of rotation and ellipticity angles using four Stokes parameters. While the rotation angle indicates the symmetric axis of an anisotropic quantum ring with a small variation (± 2°), the ellipticity angle varies from 7.4° down to -2.5°. We conclude that optical anisotropy and birefringence are induced by the crescent-like lateral shape of localized states.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.57-60
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• 1998

Poly(3-hexylthiophene)(P3HT) was synthesized by use of FeCl$_3$ as a oxidizing agent at $25^{\circ}C$. The infrared spectrum of our polymer gave good evidence for the conjugation of 3-hexylthiophene monomer unit. P3HT contains the HT(head-to-tail) linkage larger than 64% based on NMR analysis. Electronic absorption and photoluminescence studies show that cast films of P3HT have three exciting state. Absorption spectrum was separated with three maximum peaks by Giese-French method and shifted to the shorter wavelength with increasing temperature. Separated absorption spectrum of P3HT is well adapted to PL peak appeared at longer wavelength. Low temperature PL spectrum is well separated at 669nm, 733nm and 812nm.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2009년도 춘계학술대회
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• pp.703-708
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• 2009

본 논문에서는 ZnO와 $Ga_2O_3$ 분말을 1:1의 mole비로 혼합하고 여기에 Mn을 첨가하여 Ar이나 진공 분위기에서 $ZnGa_2O_4$ : Mn을 합성하였다. 제작된 $ZnGa_2O_4$ : Mn의 발광 스펙트럼, 표면 사진 및 성분비를 측정하여 산소의 성분 변화가 발광 특성에 미치는 영향을 규명하고자 하였다. 또한 저온의 Photoluminescence(PL) 스펙트럼으로부터 Mn의 site symmetry가 발광 스펙트럼에 미치는 영향을 설명하였다.

• 한국자기학회지
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• 제17권1호
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• pp.1-5
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• 2007

Rutile 구조를 가진 반강자성체 $MnF_2$와 단결정 $MnF_2(1.5%\;EuF_3)$의 Infra-Red 흡수 스펙트럼과 Photoluminescence 측정을 했다. 측정된 Data의 분석을 통해서 $EuF_3$가 1.5% 첨가된 $MnF_2$와 순수한 $MnF_2$의 광학적 성질의 차이를 밝혀내고, Eu의 첨가에 의해 나오는 PL은 $Eu^{3+}$의 f-d 전이에 의한 것임을 확인했다.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.133-138
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• 2001

We studied the optical properties of poly(3-hexylthiophene) for applying to the emitting material of organic electro luminescent device. The infrared spectrum and NMR of synthesized polymer gave good evidence for the conjugation of 3-hexylthiophene monomer unit. We confirmed that poly(3-hexylthiophene) contains the HT(head-to-tail)-HT(head-to-Tail) linkage larger than 65% based on NMR analysis. FTIR and raman spectroscopy show that poly(3-hexylthiophene) has two main vibration levels which have an energy about 0.18eV and 0.36eV. Electronic absorption spectra shifted to the shorter wavelength with increasing temperature, which is related to a conformational transition of the polymer. Photoluminescence spectrum generated at low temperature(10K) is separated at 669nm, 733nm and 812nm that it's because of phonon energy generated from the lattice vibration.

• 한국세라믹학회지
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• 제53권4호
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• pp.381-385
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• 2016

Recently, white LEDs, especially, warm white LEDs have been intensively investigated due to outstanding optical properties, long term stability and low power consumption. In this study, mixed type and patterned type of remote phosphors were prepared by screen printing process employing green and red phosphor. Each type of remote phosphor exhibited distinctive photoluminescence spectrum. For example, the mixed type of remote phosphor exhibited unique spectrum, while the patterned type showed expectable spectrum depending on the concentration of phosphors. This indicates that a small amount of red phosphor dramatically reduced the green photoluminescence in the case of mixed-type remote phosphor, whereas the effect was negligible in the patterned-type remote phosphor. The possibility of undesirable chemical reaction was further investigated by using scanning electron microscopy and X-ray diffraction.

• 한국전기전자재료학회논문지
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• 제25권3호
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• pp.193-197
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• 2012

$Gd_{1-x}VO_4:{Eu_x}^{3+}$ red phosphors were synthesized with changing the concentration of $Eu^{3+}$ ion by using a solid-state reaction method. The crystal structure, surface morphology, and photoluminescence and photoluminescence excitation properties of the red phosphors were measured by using X-ray diffractometer, field emission-scanning electron microscopy, and florescence spectrometer, respectively. The XRD results showed that the main peak of all the phosphor powders occurs at (200) plane. As for the photoluminescence properties, the maximum excitation spectrum occurred at 306 nm due to the charge transfer band from ${VO_4}^{3-}$ to $Eu^{3+}$ ions and the maximum emission spectrum was the red luminescence peaking at 619 nm when the concentration of $Eu^{3+}$ ion was 0.10 mol.

• 반도체디스플레이기술학회지
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• 제9권2호
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• pp.1-6
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• 2010

Star-like ZnO nanostructures were grown on SI(100) substrates with carbon(C) catalyst by employing vapor-solid(VS) mechanism. The morphologies and structure of ZnO nanostructures were investigated by Field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and Raman spectrum, Photoluminescence spectrum. The results demonstrated that the as-synthesized products consisted of star-like ZnO nanostructure with hexagonal wurtzite phase. Nanostructures grown at 1100 were mainly star-like in structure with diameters of 500 nm. The legs of the star-like nanostructures were preferentially grown up along the [0001] direction. A vapor.solid (VS) growth mechanism was proposed to explain the formation of the star-like structures. Photoluminescence spectrum exhibited a narrow emission band peak around 380 nm and a broad one around 491 nm. Raman spectrum of the ZnO nanostructures showed oxygen defects in ZnO nanostructures due to the existence of Ar gas during the growth process, leading to the dominant green band peak in the PL spectrum.

• 한국재료학회지
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• 제13권3호
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• pp.195-199
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• 2003

The $p-CdIn_2$$Te_4$single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_2$$Te_4$crystal and the various heat-treated crystals, the ($D^{\circ}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_2$T $e_4$:Cd, while the ($A^{\circ}$, X) emission completely disappeared in the $CdIn_2$T $e_4$:Cd. However, the ($A^{\circ}$, X) emission in the photoluminescence spectrum of the $CdIn_2$T $e_4$:Te was the dominant intensity like an as-grown $CdIn_2$T $e_4$crystal. These results indicated that the ($D^{\circ}$, X) is associated with $V_{Te}$ acted as donor and that the ($A^{\circ}$, X) emission is related to $V_{cd}$ acted as acceptor, respectively. The $p-CdIn_2$T $e_4$crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of ( $D^{\circ}$, $A^{\circ}$) emission and its TO phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and accepters such as $V_{cd}$ or T $e_{int}$. Also, the In in the $CdIn_2$X$CdIn_4$was confirmed not to form the native defects because it existed in the stable form of bonds.