• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.186-191
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• 2016

The effects of $Eu^{3+}$ doping on the structural, morphological, and optical properties of $MgMoO_4:Dy^{3+},Eu^{3+}$ phosphors prepared by solid-state reaction technique were investigated. XRD patterns exhibited that all the synthesized phosphors showed a monoclinic system with a dominant (220) diffraction peak, irrespective of the content of $Eu^{3+}$ ions. The surface morphology of $MgMoO_4:Dy^{3+},Eu^{3+}$ phosphors was studied using scanning electron microscopy and the grains showed a tendency to agglomerate as the content of $Eu^{3+}$ ions increased. The excitation spectra of the phosphor powders were composed of a strong charge transfer band centered at 294 nm in the range of 230~340 nm and two intense peaks at 354 and 389 nm, respectively, arising from the $^6H_{15/2}{\rightarrow}^6P_{7/2}$ and $^6H_{15/2}{\rightarrow}^4M_{21/2}$ transitions of $Dy^{3+}$ ions. The emission spectra of the $Mg_{0.85}MoO_4$:10 mol% $Dy^{3+}$ phosphors without incorporating $Eu^{3+}$ ions revealed a strong yellow band centered at 573 nm resulting from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of $Dy^{3+}$. As the content of $Eu^{3+}$ was increased, the intensity of the yellow emission was gradually decreased, while that of red emission band located at 614 nm began to appear, approached a maximum value at 10 mol%, and then decreased at 15 mol% of $Eu^{3+}$. These results indicated that white light emission could be achieved by controlling the contents of the $Dy^{3+}$ and $Eu^{3+}$ ions incorporated into the $MgMoO_4$ host crystal.

• Korean Journal of Materials Research
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• v.26 no.2
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• pp.67-72
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• 2016

$BaMoO_4:Tb^{3+}$ phosphor powders were synthesized with different concentrations of $Tb^{3+}$ ions using the solid-state reaction method. XRD patterns showed that all the phosphors, irrespective of the concentration of $Tb^{3+}$ ions, had tetragonal systems with two main (112) and (004) diffraction peaks. The excitation spectra of the $Tb^{3+}$-doped $BaMoO_4$ phosphors consisted of an intense broad band centered at 290 nm in the range of 230-330 nm and two weak bands. The former broad band corresponded to the $4f^8{\rightarrow}4f^75d^1$ transition of $Tb^{3+}$ ions; the latter two weak bands were ascribed to the $^7F_2{\rightarrow}^5D_3$ (471 nm) and $^7F_6{\rightarrow}^5D_4$ (492 nm) transitions of $Tb^{3+}$. The main emission band, when excited at 290 nm, showed a strong green band at 550 nm arising from the $^5D_4{\rightarrow}^7F_5$ transition of $Tb^{3+}$ ions. As the concentration of $Tb^{3+}$ increased from 1 to 10 mol%, the intensities of all the emission lines gradually increased, approached maxima at 10 mol% of $Tb^{3+}$ ions, and then showed a decreasing tendency with further increase in the $Tb^{3+}$ ions due to the concentration quenching effect. The critical distance between neighboring $Tb^{3+}$ ions for concentration quenching was calculated and found to be $12.3{\AA}$, which indicates that dipole-dipole interaction was the main mechanism for the concentration quenching of the $^5D_4{\rightarrow}^7F_5$ transition of $Tb^{3+}$ in the $BaMoO_4:Tb^{3+}$ phosphors.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.5
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• pp.187-193
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• 2024

Lanthanide-doped upconversion nanoparticles (UCNPs) are capable of converting low energy near-infrared photons into relatively high energy visible and ultraviolet photon. Their unique optical properties have a broad range of applications such as volumetric display, security labelling and deep-tissue imaging. Herein, the optically active hexagonal phased NaYF₄:Nd³⁺, Yb³⁺@NaYF₄:Yb³⁺, Tm³⁺ core-shell nanoparticles were synthesized via facile co-precipitation method which can show upconversion luminescence upon 745 nm laser excitation. This is accomplished by taking advantages of the large absorption cross-section of Nd³⁺ ions between 720 to 760 nm plus efficient spatial energy transfer and migration which starts from Nd³⁺ ions to Yb³⁺ ions and Tm³⁺ ions. Also, the formation of inert NaYF₄ shell significantly enhance the upconversion efficiency. The core-shell-shell UCNPs were characterized with X-ray diffraction (XRD) patterns, scanning electron microscope (SEM), transmission electron microscope (TEM), absorbance, and photoluminescence spectra.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.