• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.400-403
• /
• 2008

We have investigated the electro-optical characteristics of AC-PDP with different MgO protective layers, which have been deposited by electron beam evaporation from various sintered pellets with different temperatures. We have measured the secondary electron emission coefficient ($\gamma$) by using the Gamma Focused Ion Beam ($\gamma$-FIB) system, the static margin, and the address delay time. Also, we have investigated photoluminescence (PL) characteristics for understanding the energy levels of MgO pellets and protective layers.

• KIEE International Transactions on Electrophysics and Applications
• /
• 제2C권5호
• /
• pp.258-261
• /
• 2002

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.246.2-246.2
• /
• 2014

Green-light emitting OLED with single layer of Alq3 and orange-light emitting OLED with double layer of rubrene/Alq3 as EML were fabricated and characterized comparatively. The two OLED devices were based on an anode of ITO, HTL of TPD, and cathode of Al, respectively. The green light emitting OLED was then prepared with Alq3 as both ETL and EML, while the orange-light emitting OLED was prepared with rubrene deposited on Alq3. All the component layers of the OLED devices were deposited by a thermal evaporation technique in vacuum. Photoluminescence characteristics of the EML layers were investigated. Electrolumiscence characteristics of the OLED devices were comparatively investigated.

• 한국재료학회지
• /
• 제18권2호
• /
• pp.92-97
• /
• 2008

In spray pyrolysis, the effects of the preparation temperature, flow rate of the carrier gas and concentration of the spray solution on characteristics such as the morphology, size, and emission intensity of $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders under long-wavelength ultraviolet light were investigated. The phosphor powders obtained post-treatment had a range of micron sizes with regular morphologies. However, the composition, crystal structure and photoluminescence intensity of the phosphor powders were affected by the preparation conditions of the precursor powders. The $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders prepared at temperatures that were lower and higher than $700^{\circ}C$ had low photoluminescence intensities due to deficiencies related to the of Cl component. The phosphor powders with the deficient Cl component had impurity peaks of $Ca_2SiO_4$. The optimum flow rates of the carrier gas in the preparation of the $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders with high photoluminescence intensities and regular morphologies were between 40 and 60 l/minute. Phosphor powders prepared from a spray solution above 0.5 M had regular morphologies and high photoluminescence intensities.

• 한국진공학회지
• /
• 제22권6호
• /
• pp.291-297
• /
• 2013

Au 촉매를 코팅한 사파이어 기판 상에서 산화아연과 흑연 분말을 혼합한 분말재료를 이용하여 VLS (vapor-liquid-solid) 법으로 산화아연 반도체 나노선을 합성하였다. 제조된 산화아연 나노선은 380 nm에서 근 자외선 영역의 NBE (near-band edge) 발광과 600 nm 부근의 가시광선 영역에서 넓게 퍼져 발광하는 상대적으로 강한 DL (deep level) 발광이 확인되었다($I_{NBE}/I_{DL}$ <1). 산화아연 나노선을 효율적인 단일 파장 자외선 발광체에 적용될 수 있도록 NBE 발광을 극대화함과 동시에 DL 발광을 억제시키기 위하여 본 실험에서는 합성된 산화아연 나노선에 수소 플라즈마 처리를 하였다. 플라즈마 처리시간이 길어짐에 따라(120초 이상) 발광특성의 향상정도는 점차로 감소하였지만, 수소 플라즈마 처리를 통해 나노선 내부에 존재하는 불순물 제어 등으로 다소 짧은 시간의 플라즈마 처리로(90초 이내) DL발광대비 NBE발광의 세기가 약 4배로 향상됨을 확인 하였다($I_{NBE}/I_{DL}$ ~4).

• 마이크로전자및패키징학회지
• /
• 제26권1호
• /
• pp.23-28
• /
• 2019

타이타니아 ($TiO_2$)는 독성이 없고 매우 높은 굴절률, 촉매 활성 및 생체 적합성을 지니고 있으며 화학적 안정성이 있고 높은 이방성을 갖는 저렴한 재료로써 다양한 분야에서 각광받고 있는 세라믹 소재이다. 이러한 $TiO_2$를 sol-gel법을 이용하여 나노입자화 하였다. 나노입자 형성중에 pH를 조절하여 $TiO_2$의 결정성을 제어하였다. 합성된 나노입자는 엑스선 회절분석법, 퓨리에 분광기(Fourier transform infrared), 전계방사형 주사전자현미경(field emission scanning electron microscopy)과 포토루미네선스(photoluminescence spectroscopy)를 이용하여 분석하였다. 합성된 $TiO_2$ 나노입자는 5 nm 이하의 크기를 갖는 것을 확인하였다. 나노입자의 결정성이 증가됨에 따라 550 nm 영역의 발광세기가 증가함을 확인하였다. 이러한 결과로 $TiO_2$ 나노입자의 결정성 조절을 통한 발광 특성 조절을 기대할 수 있다.

• 대한금속재료학회지
• /
• 제49권9호
• /
• pp.732-738
• /
• 2011

Silicon oxide thin films were deposited by using a plasma-enhanced chemical-vapor deposition technique to investigate the light emission properties. The photoluminescence characteristics were divided into two categories along the relative ratio of the flow rates of $SiH_4$ and $N_2O$ source gases, which show light emission in the broad/visible range and a light emission peak at 380 nm. We attribute the broad/visible light emission and the light emission peak to the quantum confinement effect of nanocrystalline silicon and the Si=O defects, respectively. Changes in the photoluminescence spectra were observed after the post-annealing processes. The photoluminescence spectra of the broad light emission in the visible range shifted to the long wavelength and were saturated above an annealing temperature of $900^{\circ}C$ or after 1 hour annealing at $970^{\circ}C$. However, the position of the light emission peak at 380 nm did not change at all after the post-annealing processes. The light emission intensities at 380 nm initially increased, and decreased at annealing temperatures above $700^{\circ}C$ or after 1 hour annealing at $700^{\circ}C$. The photoluminescence behaviors after the annealing processes can be explained bythe size change of the nanocrystalline silicon and the density change of Si=O defect in the films, respectively. These results support the possibility of using a silicon-based light source for Si-optoelectronic integrated circuits and/or display devices.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
• /
• pp.1001-1004
• /
• 2003

We applied the spray pyrolysis technique to prepare fine $YBO_{3}$:Tb particles with high photoluminescence, which could be used in the plasma display device as a green phosphor. Several preparation conditions were investigated in order to tail the vacuum ultraviolet characteristics of $YBO_{3}$:Tb particles when they were prepared by the spray pyrolysis. As a result, the optimized $YBO_{3}$:Tb particles showed the high photoluminescence intensity as well as fine size in comparison with the commercial one.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
• /
• pp.803-806
• /
• 2002

Flame spray pyrolysis was applied to improve the photoluminescence characteristics of blue-emitting $Sr_5(PO_4)_3Cl:Eu^{2+}$ phosphor particles with high brightness for the application to LED phosphor. $Sr_5(PO_4)_3Cl:Eu^{2+}$ prepared from conventional spray pyrolysis had poor PL intensity than that of commercial products under long-wavelength ultraviolet(UV). $Sr_5(PO_4)_3Cl:Eu^{2+}$ phosphor particles prepared by flame spray pyrolysis had PL intensity as same as that of commercial products under long-wavelength UV. Hollow morphology and porous structure of the particles prepared by the flame spray pyrolysis disappeared after posttreatment. Even though the $Sr_5(PO_4)_3Cl:Eu^{2+}$ phosphor particles prepared by the flame spray pyrolysis had irregular shape, the particles had dense structure and clear surface property.

• 한국전기전자재료학회논문지
• /
• 제13권9호
• /
• pp.776-780
• /
• 2000

ZnGa$_2$O$_4$thin films were prepared on Si(100) wafer in terms of RF power, substrate temperatures and Ar/O$_2$flow rate by RF Magnetron Sputtering. Photoluminescence(PL) measurement was employed to observe the emission spectra of ZnGa$_2$O$_4$films. The influences of various deposition parameters on the properties of grown films were studied. The optimum substrate deposition temperature for luminous characteristics was about 50$0^{\circ}C$ in this investigation. PL spectrum of ZnGa$_2$O$_4$ thin films showed broad band luminescence spectrum.