• Transactions of Materials Processing
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• v.15 no.1 s.82
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• pp.21-26
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• 2006

A optical head unit for nano optical probe array was developed. The optical probe array is generated by Talbot effect. The shape and thickness of microlens array(MLA) were designed to minimize the spot size at the foci of MLA. To increase the optical efficiency of the system and obtain the large tolerance for fabrication, aperture size was theoretically optimized. Then microlens illuminated aperture array(MLIAA) as an optical head unit was fabricated using a ultra violet(UV) molding process on aluminum aperture array. In this process, Al aperture array was fabricated separately using the photolithography and reactive ion etching(RIE) process. Optical properties of the generated optical probes were measured and compared at Talbot distance from the aperture array having a diameter of $1{\mu}m$ and MLIAA.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.987-989
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• 2006

1.52" $130(RGB){\times}130$ full color PM OLED device with $70\;{\mu}m{\times}210\;{\mu}m$ of sub-pixel pitch was fabricated using shadow mask method for metal cathode deposition. Instead of conventional patterning process to form cathode separator via photolithography, regularly patterned shadow mask was applied to deposit metal cathode in this OLED display. Metal cathode was patterned via 2-step evaporation using shadow mask with shape of rectangular stripe and its alignment margin is $2.5\;{\mu}m$. Technical advantages of this method include reduction of process time according to skipping over photolithographic process for cathode separator and minimizing pixel shrinkage caused by PR cathode separator as well as improving lifetime of OLED device.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.4
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• pp.332-335
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• 2008

PMMA light guiding plate with nano pattern was fabricated by nano imprint lithography method. A silicon mold for electroplating of nickel was fabricated by conventional photolithography process. A nickel stamp for nano imprint lithography was fabricated by electroplating process using silicon mold. The nano imprint lithography was performed on PMMA plate at $140^{\circ}C$ under pressure of 20kN. The nano pattern on PMMA plate was investigated using FE-SEM. It is shown that the patterns were well transferred for several steps and the nano imprint lithography method could be applied for fabricating patterns of light guiding plate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.450-455
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• 2007

LCD color filters have been manufactured in a process called photolithography to date, but various printing methods have been studied currently in response to the trend of low-end LCD panels. Direct Printing Process is a suitable fabrication technique to develope pigment components whose dimensions are in nano. The success of this process depends on the systematic preparation of pigment millbase. Conventional millbase dispersions are constituted of the organic pigments, monomer, dispersant and solvents. An experimental study on the rheology of millbase dispersions is presented. Subsequently, this thesis attempts to find out the dispersive characteristics as well as the selection of pigments, monomers and dispersants in the part of millbase among the stages of manufacturing LCD color filters using the direct printing methods. The dispersive characteristics were shown through analytic devices such as PSA, Rheometer, etc.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1994-1996
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• 1996

This paper presents the fabrication and testing of a polysilicon piezoresistive accelerometer with p+ silicon diaphragm by simple process such as two step photolithography for the RIE process to form the cantilevers and a deep anisotropic etch process for the complete fabrication of the accelerometer. The fabricated accelerometer consists of a seismic mass and four cantilevers on which polysilicon piezoresistors are formed. The measurement of the output signal from the bridge circuit of the fabricated accelerometer is carried out with the HP 3582A spectrum analyzer. The analysis of the experimental result is showed in terms of the sensitivity and the resonant frequency. At atmospheric condition, the measurement values of the sensitivity and the resonant frequency are $11\;{\mu}V/Vg$ and 475 Hz, respectively.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.15 no.6
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• pp.71-75
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• 2006

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its usage in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. The target of this paper is the analysis of FIB sputtering process according to tilt angle, dwell time and overlap for application of 3D micro and pattern fabrication and to find the effective beam scanning conditions using Taguchi method. Therefore we make the conclusions that tilt angle is dominant parameter for sputtering yield. Burr size is reduced as tilt angle is higher.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.09a
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• pp.29-34
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• 2005

A optical head unit for nano optical probe away was developed. The optical probe array is generated by Talbot effect. The shape and thickness of microlens array(MLA) were designed to minimize the spot size at the foci of MLA. To increase the optical efficiency of the system and obtain the large tolerance for fabrication, aperture size was theoretically optimized. Then microlens illuminated aperture array(MLIAA) as an optical head unit was fabricated using a ultra violet(UV) molding process on aluminum aperture array. In this process, Al aperture array was fabricated separately using the photolithography and reactive ion etching(RIE) process. Optical properties of the generated optical probes were measured and compared at Talbot distance from the aperture array having a diameter of $1{\mu}m$ and MLIAA.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.1
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• pp.21-28
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• 2004

We have demonstrated the applicability of dry film photoresist (DFR) in photolithography process for fine pitch solder bumping on the polytetrafluoroethylene (PTFE/Teflon ) printed circuit board (PCB). The copper lines were formed with 100$\mu\textrm{m}$ width and 18$\mu\textrm{m}$ thickness on the PTFE test board, and varying the gaps between two copper lines in a range of 100-200$\mu\textrm{m}$. The DFRs of 15$\mu\textrm{m}$ thickness were laminated by hot roll laminator, by varying laminating temperature from $100{\circ}C$ to 15$0^{\circ}C$ and laminating speed from 0.28-0.98cm/s. We have found the optimum process of DFR lamination on PTFE PCB and accomplished the formation of indium solder bumps. The optimum lamination condition was temperature of $150^{\circ}C$ and speed of about 0.63cm/s. And the smallest size of indium solder bump was diameter of 50$\mu\textrm{m}$ with pitch of 100$\mu\textrm{m}$.

• Journal of IKEEE
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• v.19 no.4
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• pp.535-540
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• 2015

A microstrip gas chamber (MSGC), applied to digital radiography system, was designed and constructed. The microstrip electrodes were fabricated with Chrome(Cr.). by photolithography process on Silicon(Si) wafer and glass substrate. The width of anode and cathode electrodes was $10{\mu}m$, and $290{\mu}m$, respectively. The distance of the electrodes was $100{\mu}m$, and the active area was $50{\times}50mm^2$. And the number of anode was 80. The microstrip electrodes were damaged when discharges occurred over the 600 V of anode voltage. As the result of experiments. It detected the typical output signals of the pulse width, 20 ns, under the condition that the detecting gas was Ar(90%) + $CH_4$(10%), X-ray tube voltage was 42 kV, and tube current was 1 mA.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.948-951
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• 2005

New technology that reduces photolithography process steps from 4 to 3 in fabrication of TFT LCD is introduced. The core technology for 3mask-TFTs is the lift-off process [1], by which the PAS and PXL layer are formed simultaneously. To evaluate the stability of this lift-off process, outgases from photo resist on a substrate during ITO deposition and the quality of ITO film were analyzed and the conventional photo resist stripper machine which operates lift-off process was examined to see its ability to reduce particle problems of the machine. Through the development of total process and design for TFTs using this 3mask technology, panels in TN and IPS modes which exhibit same performances of a display using a conventional process were achieved. In addition, this process was already verified in the mass production line and now some products are being produced by the 3mask technology.