• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.178-181
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• 2008

A solar cell based on dye-sensitized photoelectric conversion was studied by investigating the effects of the amount of polyethylene glycol(PEG), added to the $TiO_2$ paste, on surface morphology of the $TiO_2$ films and on the solar cell performance. Energy conversion efficiency was found to increase with PEG addition up to 20 % by weight of $TiO_2$ and then decrease with further addition due to the aggregation of $TiO_2$ nano particles in the $TiO_2$ film. In this study, the best result of dye-sensitized solar cell was the short circuit current(Isc) of $22.6mAcm^{-2}$, the open circuit voltage (Voc) of 0.73 V, the fill factor (ff) of 0.55 and the overall energy conversion efficiency (${\eta}$) of 9.1 % under illumination with AM 1.5 simulated sunlight.

• Nuclear Engineering and Technology
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• v.53 no.12
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• pp.4142-4149
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• 2021

In the radiation protection application, the metal-polymer composites have been developed for their radiation shielding properties. In this research, the elastomer composites doped by 10 ㎛ and 100nm size of lead, bismuth and tungsten particles as filler with 30 and 60 wt percentages were prepared. To survey the shielding properties of the polymer composites using gamma-ray emitted from 152Eu and 137Cs sources, the gamma flux was measured by using NaI(Tl) detector, then the linear attenuation coefficient was calculated. Also, the Monte Carlo simulation (MCs) method was used. The results showed a direct relationship between the linear attenuation coefficients of the absorbent and filler ratio. Also, the decrease in the particle size of the shielding material in each weight percentage improved the radiation shielding features. When the dimension of the particles was in the order of nano-size, more attenuation was achieved. At low energies used for medical diagnostic X-ray applications due to the predominance of the photoelectric effect, bismuth and lead were suitable selection as filler.

• Journal of Astronomy and Space Sciences
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• v.36 no.2
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• pp.75-86
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• 2019

UV Psc is a typical RS CVn type system undergoing dynamic chromosphere activity. We performed photometric observations of the system in 2015 and secured new BVR light curves showing well-defined photometric waves. In this paper, we analyzed the light curves using Wilson-Devinney binary code and investigated the orbital period of the system. The combination of our light curve synthesis with the spectroscopic solution developed by previous investigators yielded the absolute parameters as: $M_1=1.104{\pm}0.042M_{\odot}$, $R_1=1.165{\pm}0.025R_{\odot}$, and $L_1=1.361{\pm} 0.041L_{\odot}$ for the primary star, and $M_2=0.809{\pm}0.082M_{\odot}$, $R_2=0.858{\pm}0.018R_{\odot}$, and $L_2=0.339 {\pm}0.010L_{\odot}$ for the secondary star. The eclipse timing diagram for accurate CCD and photoelectric timings showed that the orbital period may vary either in a downward parabolic manner or a quasi-sinusoidal pattern. If the latter is adopted as a probable pattern for the period change, a more plausible account for the cyclic variation may be the light time effect caused by a circumbinary object rather than an Applegate-mechanism occurring via variable surface magnetic field strengths.

• Nuclear Engineering and Technology
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• v.53 no.12
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• pp.4106-4113
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• 2021

Rare earth doped barium tellurite glasses were synthesised and explored for their radiation shielding applications. All the samples showed good thermal stability with values varying between 101 ℃ and 135 ℃ based on dopants. Structural properties showed the dominance of matrix elements compared to rare earth dopants in forming the bridging and non-bridging atoms in the network. Bandgap values varied between 3.30 and 4.05 eV which was found to be monotonic with respective rare earth dopants indicating their modification effect in the network. Various radiation shielding parameters like linear attenuation coefficient, mean free path and half value layer were calculated and each showed the effect of doping. For all samples, LAC values decreased with increase in energy and is attributed to photoelectric mechanism. Thulium doped glasses showed the highest value of 1.18 cm^-1 at 0.245 MeV for 2 mol.% doping, which decreased in the order of erbium, holmium and the base barium tellurite glass, while half value layer and mean free paths showed an opposite trend with least value for 2 mol.% thulium indicating that thulium doped samples are better attenuators compared to undoped and other rare earth doped samples. Studies indicate an increased level of thulium doping in barium tellurite glasses can lead to efficient shielding materials for high energy radiation.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.195-199
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• 2003

The $p-CdIn_2$$Te_4$single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_2$$Te_4$crystal and the various heat-treated crystals, the ($D^{\circ}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_2$T $e_4$:Cd, while the ($A^{\circ}$, X) emission completely disappeared in the $CdIn_2$T $e_4$:Cd. However, the ($A^{\circ}$, X) emission in the photoluminescence spectrum of the $CdIn_2$T $e_4$:Te was the dominant intensity like an as-grown $CdIn_2$T $e_4$crystal. These results indicated that the ($D^{\circ}$, X) is associated with $V_{Te}$ acted as donor and that the ($A^{\circ}$, X) emission is related to $V_{cd}$ acted as acceptor, respectively. The $p-CdIn_2$T $e_4$crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of ( $D^{\circ}$, $A^{\circ}$) emission and its TO phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and accepters such as $V_{cd}$ or T $e_{int}$. Also, the In in the $CdIn_2$X$CdIn_4$was confirmed not to form the native defects because it existed in the stable form of bonds.

• Journal of Astronomy and Space Sciences
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• v.16 no.1
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• pp.11-20
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• 1999

In this paper all the photoelectric times of minimum for the triple star SW Lyn have been analyzed in terms of light-time effect due to the third-body and secular period decreases induced by mass transfer process. The light-time orbit determined recently by Ogloza et al.(1998) were modified and improved. And it is found that the orbital period of SW Lyn have been decreasing secularly. The third-body revolves around the mass center of triple stars every $5^y.77$ in a highly eccentric elliptical orbit(e=0.61). The third-body with a minimum mass of $1.13M_{odot}$ may be a binary or a white dwarf. The rate of secular period-decrease were obtained as ${Delta}P/P=-12.45{ imes}10^{-11}$, implying the mass-transfer from the massive primary star to the secondary. The mass losing rate from the primary were calculated as about $1.24{ imes}10^{-8}M_{odot}/y$. It is noticed that the mass-transfer in SW Lyn system is opposite in direction to that deduced from it's Roche geometry by previous investigators.

• Journal of radiological science and technology
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• v.45 no.1
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• pp.57-67
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• 2022

CZT detectors, which are compound semiconductors that have been widely used recently for gamma-ray detection purposes, are difficult to detect neutrons because direct interaction with them does not occur unlike gamma-rays. In this paper, a method of detecting and determining energy levels (fast neutrons and thermal neutrons) of neutrons, in addition of identifying energy and nuclide of gamma-rays, and evaluating gamma dose rates using a CZT semiconductor detector is described. Neutrons may be detected by a secondary photoelectric effect or compton scattering process with a characteristic gamma-ray of 558.6 keV generated by a capture reaction (¹¹³Cd + ¹n → ¹¹⁴Cd + 𝛾) with cadmium (Cd) in the CZT detector. However, in the case of fast neutrons, the probability of capture reaction with cadmium (Cd) is very low, so it must be moderated to thermal neutrons using a moderator and the material and thickness of moderator should be determined in consideration of the portability and detection efficiency of the equipment. Conversely, in the case of thermal neutrons, the detection efficiency decreases due to shielding effect of moderator itself, so additional CZT detector that do not contain moderator must be configured. The CZT detector that does not contain moderator can be used to evaluate energy, nuclide, and gamma dose-rate for gamma-rays. The technology proposed in this paper provides a method for detecting both neutrons and gamma-rays using a CZT detector.

• Journal of Radiation Protection and Research
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• v.29 no.4
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• pp.263-268
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• 2004

Using the Monte Carlo simulation, a study on the lion-proportionality of the prototype phoswich detector with $2'{\times}2'$ CSI(Tl) and plastic scintillator, which was made by KAERI, has been carried. The defector response functions (DRFs) calculated by simulations were compared with the experimental measurement on the $^{137}Cs\;and\;^{60}Co$. To precisely simulate the DRF for the phoswich, the CSI(Tl) non-proportionality was calculated using the electron response and the simplified electron cascade sequence for treating the photoelectric absorption event. The resulting DRFs of $^{137}Cs\;and\;^{60}Co$ sources obtained by simulations were compared with experiments for verification. For $^{137}Cs$, gamma-ray responses simulated by MCNP5 are generally good agreement with the measured ones. But the DRF of $^{60}Co$ does not match well with the results of experiment in the energy region below second peak due to the coincidence effect of two gamma-rays (1.17 MeV and 1.33 MeV). Through the analysis of the non-proportionality of CsI(Tl) in the prototype phoswich, the improved DRFs considering non-proportionality were produced and the simulation results were verified using the experimental measurements. However, to more precisely reproduce the DRF for the phoswich, further studies in relation to the electron channeling effect and the Doppler broadening effect of a scintillator are still needed as well as considering that effect of the transfer contribution.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.96-109
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• 1997

In order to simulate the corrosion behavior of Zr-4 alloy in pressurized water reactors it was implanted (or bombarded) with 190ke V $Zr^+\; and \;Ar^+$ ions at liquid nitrogen temperature and room temperature respectively up to a dose of $5times10^{15} \sim 8\times10^{16} \textrm{ions/cm}^2$ The oxidation behavior and electrochemical vehavior were studied on implanted and unimplanted samples. The oxidation kinetics of the experimental samples were measured in pure oxygen at 923K and 133.3Pa. The corrosion parameters were measured by anodic polarization methods using a princeton Applied Research Model 350 corrosion measurement system. Auger Electron Spectroscopy (AES) and X-ray Photoelectric Spectroscopy (XPS) were employed to investigate the distribution and the ion valence of oxygen and zirconium ions inside the oxide films before and after implantation. it was found tat: 1) the $Zr^+$ ion implantation (or bombardment) enhanced the oxidation of Zircaloy-4 and resulted in that the oxidation weight gain of the samples at a dose of $8times10^{16}\textrm{ions/cm}^2$ was 4 times greater than that of the unimplantation ones;2) the valence of zirconium ion in the oxide films was classified as $Zr^0,Zr^+,Zr^{2+},Zr^{3+}\; and \;Zr^{4+}$ and the higher vlence of zirconium ion increased after the bombardment ; 3) the anodic passivation current density is about 2 ~ 3 times that of the unimplanted samples; 4) the implantation damage function of the effect of ion implantation on corrosion resistance of Zr-4 alloy was established.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.10
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• pp.1370-1374
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• 2018

A heterojunction $SnS_2/p-Si$ photodetector was fabricated by RF magnetron sputtering system. $SnS_2$ was formed with 2-inch $SnS_2$ target. Al was applied as the front and the back metal contacts. Rapid thermal process was conducted at $500^{\circ}C$ to enhance the contact quality. 2D material such as $SnS_2$, MoS2 is very attractive in various fields such as field effect transistors (FET), photovoltaic fields such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors, especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment. Especially, $SnS_2$ has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material. The large bandgap of $SnS_2$ offers the advantage for the large on-off current ratio and low leakage current. The $SnS_2/p-Si$ photodetector clearly shows the current rectification when the thickness of $SnS_2$ is 80 nm compared to when it is 135 nm. The highest photocurrent is $19.73{\mu}A$ at the wavelength of 740 nm with $SnS_2$ thickness of 80 nm. The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer.