• Journal of the Optical Society of Korea
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• v.20 no.1
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• pp.22-28
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• 2016

The monitoring and measurement of the motion of a human joint is very important in screening for degenerative brain diseases and tracking the rehabilitation process. Since there are various medical fields to benefit from angular motion measurement, the necessity for monitoring of human joint movement is increasing. In this study, the optical sensor is composed of a light emission unit with a red LED and an optical fiber, and a reception unit with an arrangement of three photodiodes. The angular detection range was widened with the use of multiple photodiodes and the developed algorithm. The result will be useful for designing an effective angular sensor with low cost and small size.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.389-393
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• 2003

The effect of antireflection layer on the reduction of optical loss has been investigated in Si photodiodes detecting red light with central wavelength of 670 nm. The theoretical analysis showed minimum reflection loss of 6% for the $SiO_2$thickness of about $1100∼1200\AA$ in the $SiO_2$-Si system with the single antireflection layer and no reflection loss for the X$N_3$N$_4$$SiO_2$thickness of $2000\AA$/$1200\AA$ in the $Si_3$$N_4$$SiO_2$-Si system with double antireflection layer. In our experiments, Si photodiodes with the web-patterned $p^{＋}$-shallow diffusion region were fabricated by bipolar IC process technology and the devices were classified into three kinds according to the structure of $Si_3$$N_4$/$SiO_2$antireflection layer. The fabricated devices showed maximum spectral response in the optical spectrum of 650∼700 nm. The average photocurrents of the devices with the $Si_3$$N_4$$SiO_2$thickness of $1000\AA$/X$SiO\AA$, and $2000\AA$$1800\AA$ under the incident power, of -17 dBm were 3.2 uA, 3.5 uA and 3.1 uA, respectively.

• Journal of the Optical Society of Korea
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• v.2 no.2
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• pp.74-79
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• 1998

The use of a fiber Fabry-Perot interferometer (FFPI) as an optical current transducer is demonstrated. A conventional inductive pickup coil converts the time-varying current I(t) being measured to a voltage waveform V(t) applied across a piezeolectric strip to which the FFPI is bonded. The strip experiences a longitudinal expansion and contraction, resulting in an optical phase shift ${\phi}(t)$ in the fiber proportional to V(t). This phase shift is measured using a frequency-modulated semiconductor light source, photodiodes to monitor the reflected light from the FFPI and the laser power, and a digital signal processor. Calibration routines compute V(t) and I(t) from the measured phase shift at a l KHz rate. Response to 60 Hz ac over the design range 0-1300A rms is characterized Transient response of the FFPI transducer is also measured.

• Journal of Biosystems Engineering
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• v.15 no.1
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• pp.33-43
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• 1990

Spectral reflectance of paddy, brown rice, milled rice, greenish grain, yellow grain and denatured grain were measured over the range of 340 to 820 nm with "Double Beam Spectrophotometer(Model UV-180)". Variation in the reflectance depending on milling degree of milled rice appeared greatest over the range of 420 to 500 nm, and that between white rice and other rice samples appeared greatest near 500 nm. On the basis of the above results, a whiteness meter to measure milling degree of rice was manufactured using tungsten lamp, photodiodes and amplifier, and its performance was compared with the existing whiteness meters (KETT and Z-II optical sensor). There were very high correlations among those whiteness meters.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.270-273
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• 2000

We have fabricated and analyzed photodiodes for optical link with Si pin structures. As the results of experiment, the web patterned photodiode(type C) with $p^{+}$-guard ring showed low junction capacitance of 6~7 pF at $V_{R}$=-5V and high separation ability for optical signal(dark current : $\leq$ 5 nA, optical signal current : $\geq$ 340 nA) due to the small effective $p^{+}$-n junction area and the expanded electric field region. The fabricated Si pin photodiode can be applicable for detecting an optical signal with the wavelength of about 660~670 nm. It can also be integrated with the twin well CMOS structure to develope an one chip based optical receiver IC. IC.C.

• 제어로봇시스템학회:학술대회논문집
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• 1991.10b
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• pp.1956-1960
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• 1991

This paper describes the measured results upon monochromatic light, compound light, and light emanated from light emitting diodes by a simplified wavemeter with a semiconductor color sensor. Since a single unit element of a semiconductor color sensor with two PN junction photodiodes has been developed, the author has fabricated the simplified wave detector by using the element. The simplified wive detector has been measured results upon monochromatic light, compound light, and light emanated from light emitting diodes. Since luminescent color of each diode locates in luminosity region, comparison of measured values of PD-150 and PD-151 resulted no remarkable difference in averaged wave length. As for monochromatic light, PD-151 showed very cross value to the color filter peak value rather than PD-150. As for compound light, PD-150 has shown such influence of long wave length light which reaches to near infrared ray with respect to PD-151.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.3
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• pp.239-243
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• 2003

In this paper, an angle diversity wireless optical detector is realized that can receive the optical signal at an angle from 0 to 360 degrees. Eight photodiodes constitute an angle diversity receiver, and in order to reduce the voltage variation with the incident angle, the optical detector is stabilized with a digital potentiometer. In a stabilized state, the voltage variation is kept within 1/10 of maximum voltage. This configuration is very useful in constructing an omni-directional receiver in a wireless optical interconnection.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.37-40
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• 2001

This paper presents the modeling methodology of Zinc diffusion process applied for high-speed avalanche photodiode fabrication using neural networks. Three process factors (sealing pressure, amount of Zn$_3$P$_2$ source per volume, and doping concentration of diffused layer) are examined by means of D-optimal design experiment. Then, diffusion rate and doping concentration of Zinc in diffused layer are characterized by a static response model generated by training fred-forward error back-propagation neural networks. It is observed that the process models developed here exhibit good agreement with experimental results.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.5
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• pp.737-746
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• 1990

Ga0.47In0.53As PIN photodiodes(PD) having various areas have been fabricated by liquid phase epitaxial techniques. Ternary melt has been baked out at 675\ulcorner in H2 atmosphere for 20 hours before growth, which resulted in reduction of background carrier concentration of grown epi-layer. Also, lattice mismatch has been controlled within 0.01%. The room temperature performance of 10**-4cm\ulcornerarea PIN PD at a bias voltage of -5V were` quantum efficiency(with no antireflection coating)=60% for 1.3\ulcorner light source, dark current\ulcorner5nA, and capacitance\ulcornerpE. Frequency response measurement of packaged PIN PD has shown that cut-off frequency (f-3dB) was 961MHz. This PD has shown a good eye pattern when it was incorporated in a 565Mbps optical receiver.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.259-259
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• 2010

교류 전기장에 의해 배열된 ZnO 나노선 기반의 광다이오드를 제작하고 자외선 광특성을 조사하였다. ZnO 나노선은 dielectrophoresis (DEP) force와 토크 (T)에 의하여 두 전극사이에 배열되며, silicon (Si)나노선과 접합을 하여 p-n 접합을 형성한다. 형성된 p-n 접합은 정류작용을 하는 다이오드 특성을 보이며, 자외선 입사시 전류 점멸비 (on/off ratio) $10^1{\sim}10^2$을 보이는 광다이오드(photodiode)로서 동작한다.