• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.37-40
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• 2001

This paper presents the modeling methodology of Zinc diffusion process applied for high-speed avalanche photodiode fabrication using neural networks. Three process factors (sealing pressure, amount of Zn$_3$P$_2$ source per volume, and doping concentration of diffused layer) are examined by means of D-optimal design experiment. Then, diffusion rate and doping concentration of Zinc in diffused layer are characterized by a static response model generated by training fred-forward error back-propagation neural networks. It is observed that the process models developed here exhibit good agreement with experimental results.

• 대한전자공학회논문지
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• 제26권11호
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• pp.1652-1657
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• 1989

In this research, the PN junction type Si photodiodes have been fabricated on the low doped P type(Na=7x10**14 cm**-3) and N type (Nd=4x10**14cm**-3) (100) silicon substrates. We could find out that the dark current was lower in the N type substrate than in the P type substrate. Some well designed photodiodes showed relatively good optical and electronic characteristics that the dark current is lower than 5 nA at 10V of reverse bias condition, that the breakdown voltage is higher than 250V, and that the quantum efficiency is larger than 86% at the wavelength of $6328{\AA}$

• 전자공학회논문지D
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• 제34D권5호
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• pp.61-66
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• 1997

In this paper we report the fabrication of an InGaAs metal-semiconductor-metal (MSM) photodiode(PD) which an InAlAs barrier enhancement layer that has very low dark current and high speed chracteristics. The detector using Cr/Au schottky metal fingers with 4um spacing on a large active area of 300*300um$^{2}$ offers a low dark current of 38nA at 10V, a low capacitance of 0.8pF, and a high 3-dB bandwidth of 2.4 GHz. To our knowledge, these characteristics are better than any previously published results obtained from large area InGaAs MSM PD's. The RC equivalent model and frequency domain current response model considering transit time were also used to analyze the frequency characteristic of the fabricated device.

• KIEE International Transactions on Electrophysics and Applications
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• 제2C권5호
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• pp.273-278
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• 2002

Even though the modulating signal frequency of the light is too high to detect directly, the signal can be extracted by frequency conversion at the same time as the detection by means of the non-linearity of the APD. An analysis is presented for super-high-speed optical demodulation by an APD with electronic mixing. A normalized gain is defined to evaluate the performance of the frequency conversion demodulation. The nonlinear effect of the internal capacitance was included in the small signal circuit analysis. We showed theoretically and experimentally that the normalized gain is dependent on the down converted difference frequency component. In the experiment, the down converted different frequency outputs became larger than the directly detected original signal for the applied local signal of 20㏈m.

• 한국전기전자재료학회논문지
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• 제16권12호
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• pp.1097-1102
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• 2003

In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode, Considering these results, we fabricated p-i-n diodes on the high resistive(4㏀$.$cm) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of pin diode can be decreased by the application of finger pattern has parallel resistance structure from 571Ω to 393Ω.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.259-259
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• 2010

교류 전기장에 의해 배열된 ZnO 나노선 기반의 광다이오드를 제작하고 자외선 광특성을 조사하였다. ZnO 나노선은 dielectrophoresis (DEP) force와 토크 (T)에 의하여 두 전극사이에 배열되며, silicon (Si)나노선과 접합을 하여 p-n 접합을 형성한다. 형성된 p-n 접합은 정류작용을 하는 다이오드 특성을 보이며, 자외선 입사시 전류 점멸비 (on/off ratio) $10^1{\sim}10^2$을 보이는 광다이오드(photodiode)로서 동작한다.

• 전자공학회논문지A
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• 제32A권1호
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• pp.89-96
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• 1995

Lateral p-i-n photodiodes have been fabricated, electrically tested, and incorporated into microwave control circuits such as an optically excited microwave atttenuator and reflection type phase shifter. Circuit design procedures for the loaded-line phase shifter with the optically controlled p-i-n photodiode are presented. The equal loss loading mode presented for the first time for the phase shifter circuits with lossy load allows an equal insertion loss of the phase shifter in both of its phase states. It is found that the insertion loss of the equal loss loading mode phase shifter constructed with the fabricated p-i-n photodiode load are about 3dB for 11.25$^{\circ}$ bit and 1dB for 5.625$^{\circ}$ bit for the frequency range of 2GHz to 11GHz.

• 한국공작기계학회논문집
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• 제17권1호
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• pp.98-105
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• 2008

In this paper, the system for monitoring process of aluminum laser welding was developed using the light signal emitted from the plasma which comes from interaction between material and laser. Photodiode for monitoring system was selected based on the spectrum analysis of light from plasma and keyhole. Behavior of plasma and keyhole was analyzed through the sensor signals. Value of sensor signal represented the light intensity and fluctuation of signal indicated the stability of plasma and keyhole. For the relation between welding condition and sensor signals, the input power and weld geometry greatly effected on the average of each sensor signals. Using the feature values of signals, estimation model for tensile strength of weld was formulated with neural network algorithm. Performance of this model was verified through coefficient of determination and average error rate.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권4호
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• pp.270-274
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• 2006

A color filter array (CFA) helps a single electrical image sensor to recognize color images. The Red-Green-Blue (RGB) Bayer CFA is commonly used, but the amount of the light which arrives at the photodiode is attenuated with this CFA. Red-White-Blue (RWB) CFA increases the amount of the light which arrives at photodiode by using White (W) pixels instead of Green (G) pixels. However, white pixels are saturated earlier than red and blue pixels. The pseudo multiple capture scheme and the corresponding RWB CFA were proposed to overcome the early saturation problem of W pixels. The prototype CMOS image sensor (CIS) was fabricated with $0.35-{\mu}m$ CMOS process. The proposed CIS solves the early saturation problem of W pixels and increases the dynamic range.

• 대한전자공학회논문지
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• 제25권9호
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• pp.1068-1073
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• 1988

PIN-Photodiodes were fabricated with CO2 laser annealed SOI and their electric characteristics were measured. Dark current decreased and photocurrent-dark current ratio increased as the grain size of polycrystalline silicon in intrinsic region increased. In case of the largest grain, 10-20um, dark current was 30 n A (at - 4V) and photocurrent was proportional to light intensity.