• 제목/요약/키워드: Photo lithography

검색결과 153건 처리시간 0.03초

Material Design for the Fabrication of Barrier Ribs with High Aspect Ratio of Plasma Display Panel by X-ray Lithography

  • Ryu, Seung-Min;Yang, Dong-Yol;So, Jae-Yong;Park, Lee-Soon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.989-992
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    • 2008
  • X-ray lithography is one of the most powerful processes in the fabrication of nano/micro structures with a high aspect ratio. This process enables the fabrication of ultra-thin barrier ribs for PDP using X-ray sensitive paste. In this paper, organic material including photo-monomers, photo-oligomers, binder polymer and additives as well as inorganic powders with different size were optimized to fabricate high aspect ratio barrier rib pattern for PDP.

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포토닉 크리스탈 응용을 위한 비정질 칼코게나이드 As-Ge-Se-S 박막의 특성 연구 (The Characteristic Study of Amorphous Chalcogenide As-Ge-Se-S Thin Film for Photonic Crystal Application)

  • 남기현;구용운;최혁;정홍배
    • 한국전기전자재료학회논문지
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    • 제21권6호
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    • pp.580-583
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    • 2008
  • In this paper, we investigated the properties of chalcogenide glass thin films formed by photo-inducing for use in 1-dimensional photonic crystals. We used Ag-doped amorphous As-Ge-Se-S thin films which belongs in the chalcogenide materials having sensitive photoluminescence properties. The purpose of this experiment is to form the holographic lattice for 1-dimensional photonic crystals. The way in which photo-induce into the amorphous chalcogenide thin films is holographic lithography method. We confirmed the formation of diffraction lattice by sensing the existence of diffraction beam and measured the diffraction efficiency. The results suggest that there is an application possibility with photonic crystals.

Photo lithography을 이용한 플라즈마 에칭 가공특성에 관한 연구 (A study on processing characteristics of plasma etching using photo lithography)

  • 백승엽
    • Design & Manufacturing
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    • 제12권1호
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    • pp.47-51
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    • 2018
  • As the IT industry rapidly progresses, the functions of electronic devices and display devices are integrated with high density, and the model is changed in a short period of time. To implement the integration technology, a uniform micro-pattern implementation technique to drive and control the product is required. The most important technology for the micro pattern generation is the exposure processing technology. Failure to implement the basic pattern in this process cannot satisfy the demands in the manufacturing field. In addition, the conventional exposure method of the mask method cannot cope with the small-scale production of various types of products, and it is not possible to implement a micro-pattern, so an alternative technology must be secured. In this study, the technology to implement the required micro-pattern in semiconductor processing is presented through the photolithography process and plasma etching.

Maskless Lithography system을 이용한 TSP 검사 용 micro bump 제작에 관한 연구. (A study of fabrication micro bump for TSP testing using maskless lithography system.)

  • 김기범;한봉석;양지경;한유진;강동성;이인철
    • 한국산학기술학회논문지
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    • 제18권5호
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    • pp.674-680
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    • 2017
  • 본 논문은 현재 개인 휴대기기 및 대형 디스플레이 장비의 제어에서 폭넓게 사용되고 있는 터치스크린 패널 (TSP; Touch Screen Panel)의 정상 작동 유무를 확인하기 위한 micro bump 제작 기술에 관한 연구이다. 터치스크린 패널은 감압식, 정전식 등의 여러 가지 방식이 있으나 지금은 편리성에 의하여 정전식 방식이 주도하고 있다. 정전식의 경우 해당하는 좌표의 접촉에 따라 전기적 신호가 변화하게 되고, 이를 통하여 접촉 위치를 확인할 수 있으며 따라서 접촉 위치에 따른 전기 특성 검사가 필수적이다. 검사공정에서 TSP의 모델이 변경됨에 따라 새로운 micro bump를 제작이 및 검사 프로그램의 수정이 필수적이다. 본 논문에서는 새로운 micro bump 제작 시 mask를 사용하지 않아 보다 경제적이며 변화에 대응이 유연한 maskless lithography 시스템을 이용하여 micro bump 제작 가능성에 대하여 확인하였다. 이를 위하여 제작되는 bump의 pitch에 따른 전기장 간섭 시뮬레이션을 진행하였으며, maskless lithogrphy 공정을 적용하기 위한 패턴 이미지를 생성하였다. 이후 MEMS 기술에 해당하는 PR(Photo Resist) 패터닝 공정에서 노광(Lithography) 공정 및 현상(Developing) 공정을 통하여 PR 마스크를 제작한 후 electro-plating 공정을 통하여 micro bump를 제작하였다.

평판 디스플레이용 Laser Direct Imaging에 관한 연구( I ) (A Study on the Laser Direct Imaging for FPD ( I ))

  • Kang, H.S.;Kim, K.R.;Kim, H.W.;Hong, S.K.
    • 한국레이저가공학회:학술대회논문집
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    • 한국레이저가공학회 2005년도 추계학술발표대회 논문집
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    • pp.37-41
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    • 2005
  • When screen size of the Flat Panel Display (FPD) becomes larger, the traditional photo-lithography using photomasks and UV lamps might not be possible to make patterns on Photo Resist (PR) material due to limitation of the mask size. Though the maskless photo-lithography using UV lasers and scanners had been developed to implement large screen display, it was very slow to apply the process for mass-production systems. The laser exposure system using 405 nm semi-conductor lasers and Digital Micromirror Devices (DMD) has been developed to overcome above-mentioned problems and make more than 100 inches FPD devices. It makes very fine patterns for full HD display and exposes them very fast. The optical engines which contain DMD, Micro Lens Array (MLA) and projection lenses are designed for 10 to 50 ${\mu}m$ bitmap pattern resolutions. The test patterns for LCD and PDP displays are exposed on PR and Dry Film Resists (DFR) which are coated or laminated on some specific substrates and developed. The fabricated edges of the sample patterns are well-defined and the results are satisfied with tight manufacturing requirements.

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Maskless 노광공정을 위한 LDI(Laser Direct Imaging) 시스템 개발 및 단일 레이저 빔 에너지 분포 분석 (Development of a LDI System for the Maskless Exposure Process and Energy Intensity Analysis of Single Laser Beam)

  • 이수진;김종수;신봉철;김동우;조명우
    • 한국생산제조학회지
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    • 제19권6호
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    • pp.834-840
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    • 2010
  • Photo lithography process is very important technology to fabricate highly integrated micro patterns with high precision for semiconductor and display industries. Up to now, mask type lithography process has been generally used for this purpose; however, it is not efficient for small quantity and/or frequently changing products. Therefore, in order to obtain higher productivity and lower manufacturing cost, the mask type lithography process should be replaced. In this study, a maskless lithography system using the DMD(Digital Micromirror Device) is developed, and the exposure condition and optical properties are analyzed and simulated for a single beam case. From the proposed experimental conditions, required exposure experiments were preformed, and the results were investigated. As a results, 10${\mu}m$ spots can be generated at optimal focal length.

High-Aspect-Ratio Nanoscale Patterning in a Negative Tone Photoresist

  • Ryoo, Kwangki;Lee, Jeong Bong
    • Journal of information and communication convergence engineering
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    • 제13권1호
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    • pp.56-61
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    • 2015
  • The demand for high-aspect-ratio structures has been increasing in the field of semiconductors and other applications. Here, we present the commercially available negative-tone SU-8 as a potential resist that can be used for direct patterning of high-aspect-ratio structures at the submicron scale and the nanoscale. Such resist patterns can be used as polymeric molds to create high-aspect-ratio metallic submicron and nanoscale structures by using electroplating. Compared with poly (methyl methacrylate) (PMMA), we found that the negative tone resist required an exposure dose that was less than that of PMMA of equal thickness by a factor of 100-150. Patterning of up to 4:1 aspect ratio SU-8 structures with a minimum feature size of 500 nm was demonstrated. In addition, nanoimprint lithography was studied to further extend the aspect ratio to realize a minimum feature size of less than 10 nm with an extremely high aspect ratio in the negative resist.