• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.793-796
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• 2003

The electronics of a mobile robot ill nuclear facilities is required to satisfied the reliability to sustain survival in its radiation environment. To know how much radiation the robot has been encountered to replace sensitive electronic parts, a dosimeter to measure total accumulated dose is necessary. Among many radiation dosimeters or detectors, semiconductor radiation sensors have advantages in terms of power requirements and their sires over conventional detectors. This paper describes the use of the radiation-induced threshold voltage change of a commercial power pMOSFET as an accumulated radiation dose monitoring mean and that of the photo-current of a commercial PIN Diode as a dose-rate measurement mean. Commercial p-type power MOSFETs and PIN Diodes were tested in a Co-60 gamma irradiation facility to see their capabilities as radiation sensors. We found an inexpensive commercial power pMOSFET that shows good linearity in their threshold voltage shift with radiation dose and a PIN diode that shows good linearity in its photo-current change with dose-rate. According to these findings, a radiation hardened hybrid electronic radiation dosimeter for nuclear robots has been developed for the first time. This small hybrid dosimeter has also an advantage in the point of view of reliability improvement by using a diversity concept.

• Environmental Engineering Research
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• v.19 no.3
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• pp.293-298
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• 2014

An anaerobic photosynthetic treatment process utilizing purple non-sulfur photosynthetic bacteria (PNSB) was applied to the recovery of organic carbon from food processing wastewater. PNSB cells, by-product from the treatment, have high nutrition such as proteins and vitamins which are a good alternative for fish feed. Effects of light source on performance of anaerobic photosynthetic process were investigated in this study. Two bench-scale photo-bioreactors were lighted with infrared light emitting diodes (LEDs) and tungsten lamps covered with infrared transmitting filter, respectively, aiming to supply infrared light for photosynthetic bacteria growth. The photo-bioreactors were operated to treat noodle-processing wastewater for 323 days. Hydraulic retention time (HRT) was set as 6 days. Organic removals in the photo-bioreactor lighted with infrared LEDs (91%-95%) was found higher than those in photo-bioreactor with tungsten lamps with filter (79%-83%). Biomass production in a 150 L bench-scale photo-bioreactor was comparable to a 8 L small-scale photo-bioreactor in previous study, due to improvement of light supply efficiency. Application of infrared LEDs could achieve higher treatment performance with advantages in energy efficiency and wavelength specifity.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.471.2-471.2
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• 2014

We demonstrate here that an improvement in precursor film density (green density) leads to a great enhancement in the photovoltaic performance of CuInSe2 (CISe) thin film solar cells fabricated with Cu-In nanoparticle precursor films via chemical solution deposition. A cold-isostatic pressing (CIP) technique was applied to uniformly compress the precursor film over the entire surface (measuring 3~4 cm2) and was found to increase its relative density (particle packing density) by ca. 20%, which resulted in an appreciable improvement in the microstructural features of the sintered CISe film in terms of lower porosity, reduced grain boundaries, and a more uniform surface morphology. The low-bandgap (Eg=1.0 eV) CISe PV devices with the CIP-treated film exhibited greatly enhanced open-circuit voltage (VOC, from 0.265 V to 0.413 V) and fill factor (FF, from 0.34 to 0.55), as compared to the control devices. As a consequence, an almost 3-fold increase in the average power conversion efficiency, 3.0 to 8.2% (with the highest value of 9.02%), was realized without an anti-reflection coating. A diode analysis revealed that the enhanced VOC and FF were essentially attributed to the reduced reverse saturation current density (j0) and diode ideality factor (n). This is associated with the suppressed recombination, likely due to the reduction in recombination sites such as grain/air surfaces (pores), inter-granular interfaces, and defective CISe/CdS junctions in the CIP-treated device. From the temperature dependences of VOC, it was confirmed that the CIP-treated devices suffer less from interface recombination.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.11-12
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• 2012

In this paper, efficient visible light communication technology LED (Light Emitting Diode) lighting through the existing infrared sensor used for performance analysis of transmitting and receiving is possible. LED utilizes lighting by changing light into electricity. Lighting features while maintaining the basic principles of flashing LED and PD (Photo Diode) to send and receive communications from LED lighting communication convergence principle be realized simultaneously enabling. Multiple IT applications under the basic structure of LED technology development, and the current was encountered in real life. LED lighting anywhere with wireless communication technology that can, in order to ~ 1m above the initial value by taking advantage of the system H/W and infrared sensors(PD) are widely used in the entire system that can improve the speed of visible light data transmission system is finished. LED module that is used to communicate whether the performance analysis, For forecasting and communication distance on the LED and infrared sensor configuration of the implementation of the research is to study about the possibility of application methods and indicates.

• Toxicological Research
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• v.24 no.3
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• pp.227-233
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• 2008

To detect lead ions using electrochemical voltammetric analysis, Infrared Photo-Diode Electrode(IPDE) was applied via cyclic and square wave stripping voltammetry. Lead ions were deposited at 0.5 V(versus Ag/AgCl) accumulation potential. Instrumental measurements systems were made based on a simple and compact detection system. The stripping voltammetric and cyclic voltammetric optimal parameters were searched. The results yielded a cyclic range of $40{\sim}240mgl^{-1}$ Pb(II) and a square wave stripping working range of $0.5{\sim}5.00mgl^{-1}$ Pb(II). The relative standard deviation at 2 and 4 $mgl^{-1}$ Pb(II) was 0.04% and 0.02%(n=15), respectively, using the stripping voltammetric conditions. The detection limit was found to be 0.05 $mgl^{-1}$ with a 40 sec preconcentration time. Analytical interference ions were also evaluated. The proposed method was applied to determine lead ions in various samples.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.323-330
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• 2005

We fabricate PIN PD (Positive Intrinsic Negative Photo-Diode) for CWDM optical repeater and optical transmission system, and analyze theoretically the characteristics to verify the capability of device fabricated. Furthermore, we integrate CWDM filter into PD package to enhance the cost and the performance when compared to the conventional system, in which CWDM filter and PD package are linked by optical fusion splicing. The integrated CWDM PD is fabricated by three steps as follows: CWDM filter design, PD packaging, and product assembly and test. The results of measurement for PD fabricated reveal 0.5 dB bandwidth of 17 nm, isolation over 60 dB at transmission port and over 20 dB at reflection port. Also, the IMD3 for wireless communication is over 63 dBc, and the responsivity of PD presents over 0.9 A/W for 20 samples of the total 23 PD. The total insertion loss reduces about 0.4${\~}$0.7 dB due to the integrated assembly of CWDM and PD.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.223-223
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• 2004

반도체 및 TFT LCD 제조 공정에서 핵심 공정인 Photo 공정은 PR(Photo Resist, 감광액) Coating -) Exposure(노광) -. Develop(현상)으로 이루어져 있다. 이중 Exposure 공정에 사용되는 장치가 노광장비이다. 노광장비는 Mask Aligner 라고도 불리는데, 그만큼 정렬기술이 노광장비에서는 중요하다. 반도체 및 TFT LCD 는 여러 충의 회로를 쌓아감으로써 층과 층간의 전기적 작용으로 생성되는 Tr.(Transistor) 또는 Diode 등의 수동소자를 집적하는 기술로 제조되는 것으로, 층과 층간의 전기적 작용이 설계한 바와 같이 이루어지기 위해선, 층과 층 사이의 정렬이 정확히 이루어져야 한다.(중략)

• Journal of Welding and Joining
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• v.17 no.3
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• pp.26-35
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• 1999

On the laser weld production line, a slight alteration of the welding condition changes the bead size and the strength of the weldment. The measurement system is produced by using three photo-diodes for detection of the plasma and spatter signal in $CO_2$ laser welding. The relationship between the sensor signals of plasma or spatter and the bead shape, and the mechanism of the plasma and spatter were analyzed for the bead size estimation. The penetration depth and the bead width were estimated using the multiple regression analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.55-56
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• 2008

The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in the case of illumination from various lightsources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from spectral analysis of light sources.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.844-847
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• 2008

The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in case of illumination from various light sources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight. The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from the spectral characteristics of light sources.