• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.30-33
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• 2008

Using a $Ir(ppy)_3$ doped in hole and electron transport host materials, simple three layers green PHOLEDs comprising double emissive layers have been fabricated. A low driving voltage value of 3.3 V to reach a luminance of $1000\;cd/m^2$ and maximum current- and power-efficiency values of 53.9 cd/A and 57.8 lm/W are demonstrated in this simple structure phosphorescent OLED.

• Bulletin of the Korean Chemical Society
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• 제34권5호
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• pp.1366-1370
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• 2013

A series of phosphorescent iridium(III) complexes 1-4 based on phenylpyrazole were synthesized and their photophysical properties were investigated. To evaluate their electroluminescent properties, OLED devices with the structure of ITO/NPB/mCP: 8% Iridium complexes (1-4)/TPBi/Liq/Al were fabricated. Among those, the device with 3 showed the most efficient white emission with maximum luminance of 100.6 $cd/m^2$ at 15 V, maximum luminous efficiency of 1.52 cd/A, power efficiency of 0.71 lm/W, external quantum efficiency of 0.59%, and CIE coordinates of (0.35, 0.40) at 15.0 V, respectively.

• 한국전기전자재료학회논문지
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• 제23권2호
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• pp.143-147
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• 2010

We have fabricated simple triple-layer blue-emitting phosphorescent organic light emitting diodes (OLEDs) using different thicknesses of N,N'-dicarbazolyl-3,5-benzene (mCP) host layers doped with bis[(4,6-di-fluorophenyl)-pyridinate-N,$C^{2'}$]picolmate (FIrpic) guest materials. The thicknesses of mCP:FIrpic layers were 5, 10, and 30 nm. Driving voltage, current and power efficiencies were investigated. The current efficiency was higher in the 10 nm thick mCP:FIrpic device, resulting from the better electron-hole balance. The device with 10 nm mCP:FIrpic layer exhibited the maximum current efficiency of 22.5 cd/A and power efficiency of 7.4 lm/W at a luminance of 1000 cd/$m^2$.

• 한국응용과학기술학회지
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• 제25권2호
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• pp.265-268
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• 2008

Among the efforts to increase the efficiency of organic light-emitting device (OLED), there is a way: doping phosphorescent materials. As a phosphorescent material, complexes of heavy transition metal, platinum, were synthesized. $Cl^-$ ion and phenyl group were used as ancillary ligands with 2-(2-pyridyl)benzimidazole (pbi) as a chromophore. The complexes were analysed by FAB-mass spectrometer and absorption and emission spectra were obtained. A phenyl group was able to shift the emission band of the complex even if it's not a chromorphore.

• 한국전기전자재료학회논문지
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• 제27권4호
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• pp.232-237
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• 2014

We have fabricated white organic light-emitting diodes (OLEDs) by co-doping of red and blue phosphorescent guest emitters into the single host layer. Tris(2-phenyl-1-quinoline) iridium(III) [$Ir(phq)_3$] and iridium(III)bis[(4,6-di-fluorophenyl)-pyridinato-$N,C^{2^{\prime}}$]picolinate (FIrpic) were used as red and blue dopants, respectively. The effects of dopant concentration on the emission, carrier conduction and external quantum efficiency characteristics of the devices were investigated. The emissions on the guest emitters were attributed to the energy transfer to the guest emitters and direct excitation by trapping of the carriers on the guest molecules. The white OLED with 5% FIrpic and 2% $Ir(phq)_3$ exhibited a maximum external quantum efficiency of 19.9% and a maximum current efficiency of 45.2 cd/A.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.166-166
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• 2006

The photoluminescence (PL) efficiency of $Ir(ppy)_{3}$:PVK is lower than $Ir(ppy)_{3}$:CBP for the whole range of doping concentration and this low PL efficiency can be a reason of the lower efficiency of PhPLED than PhOLED. The lower efficiency is originated from the large bi-excitonic quenching such as the triplet-triplet annihilation. The PhPLEDs showed very short lifetime. The short lifetime was found to be originated from the instability of the doubly reduced $Ir(ppy)_{3^{-2}}$. The double reduction takes place because of the low electron mobility of PVK and large energy difference of LUMO level between PVK and $Ir(ppy)_{3}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.428-429
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• 2006

In this thesis, verifies electrical-optical characteristics of phosphorescent materials. basic structure of fabricating devices is glass/ITO/$\alpha$-NPD($300{\AA}$)/CBP:Guest($300{\AA}$)/BCP($80{\AA}$)/$Alq_3(100{\AA})$/Al($1000{\AA}$). In efficiency, fabrication of organic light emitting diodes using $Ir(btp)_2acac$ phosphorescent material is external quantum efficiency 0.268% as doping concentration 3%. At CIE coordinates, phosphorescent material $Ir(btp)_2acac$ following materials moves high purity red color(x=0.6686, y=0.3243). The brightness shows $285cd/cm^2$.

• 한국재료학회지
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• 제19권5호
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• pp.240-244
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• 2009

Simple and high efficiency green phosphorescent devices using an intermixed double host of 4, 4', 4"-tris(N-carbazolyl) triphenylamine [TCTA], 1, 3, 5-tris (N-phenylbenzimiazole-2-yl) benzene [TPBI], phosphorescent dye of tris(2-phenylpyridine)iridium(III) [$Ir(ppy)_3$], and selective doping in the TPBI region were fabricated, and their electro luminescent characteristics were evaluated. In the device fabrication, layers of $70{\AA}$-TCTA/$90{\AA}$-$TCTA_[0.5}TPBI_{0.5}$/$90{\AA}$-TPBI doped with $Ir(ppy)_3$ of 8% and an undoped layer of $50{\AA}$-TPBI were successively deposited to form an emission region, and SFC137 [proprietary electron transporting material] with three different thicknesses of $300{\AA}$, $500{\AA}$, and $700{\AA}$ were used as an electron transport layer. The device with $500{\AA}$-SFC137 showed the luminance of $48,300\;cd/m^2$ at an applied voltage of 10 V, and a maximum current efficiency of 57 cd/A under a luminance of $230\;cd/m^2$. The peak wavelength in the electroluminescent spectral and color coordinates on the Commission Internationale de I'Eclairage [CIE] chart were 512 nm and (0.31, 0.62), respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1050-1055
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• 2005

We report the development frontiers that are dictating the speed of adoption of polymer organic light emitting diode (P-OLED) technology in market applications. Our presentation includes both the developments taking place in materials and the rapid advances in the manufacturing processes used for solution processable P OLEDs. On the manufacturing side, the latest progress in ink jet printing process is discussed. On the materials side, we look at both fluorescent and phosphorescent material performance including the CDT development roadmap.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1355-1360
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• 2005

We report the development frontiers that are dictating the speed of adoption of polymer organic light emitting diode (P-OLED) technology in market applications. Our presentation includes both the developments taking place in materials and the rapid advances in the manufacturing processes used for solution processable P-OLEDs. On the manufacturing side, the latest progress in ink jet printing process is discussed. On the materials side, we look at both fluorescent and phosphorescent material performance including the CDT development roadmap.