• Rapid Communication in Photoscience
• /
• v.1 no.2
• /
• pp.63-63
• /
• 2012

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.272-276
• /
• 2004

Great strides in organic light emitting device (OLED) technology have resulted in a number of commercial products. To continue this growth into large area displays, for example televisions, an understanding of the mechanisms that drive the OLED device efficiency and lifetime performance is critical. In this work, we consider maximizing the efficiency lifetime product based on phosphorescent OLED ($PHOLED^{TM}$) technology. We report green PHOLEDs with luminous efficiency of 82 cd/A, 5.7 V and 10,000 hours lifetime at 1,000 cd/$m^2$,red PHOLEDs with CIE of (0.67,0.33), 11 cd/A and 35,000 hours lifetime at 500 cd/$m^2$ and recent progress in blue demonstrating efficiencies of 18 cd/A at 200 cd/$m^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.36-37
• /
• 2009

We have studied the effect of the hole transporting layers on the device efficiencies blue phosphorescent organic light emitting diodes (PHOLED) with of iridiumIIIbis4,6-di-fluorophenyl-pyridinato-N,C2picolinate (FIrpic) doped 3,5--N,N-dicarbazole-benzene (mCP) host. The highest efficiency of blue PHOLED is strongy dependent on the hole transporting materials, exhibiting the maximum current efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.305-306
• /
• 2009

In this study, we have invastigated the recombination zone in the blue phosphorescent organic light-emitting devices with various partially doped structures. The basic device structure of the blue PHOLED was anode / hole injection layer (HIL) / hole transport layer (HTL) / emittingvastigated the recombination zone in the blue layer (EML) / hole blocking layer (HBL) / electron transport layer (ETL) / electron injection layer (EIL) / cathode. After the preparation of the blue PHOLED, the current density (J) - voltage (V) - luminance (L) and current efficiency characteristics were measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04a
• /
• pp.76-77
• /
• 2009

In this paper, We have studied Electron Transport Layer(ETL) in the New Organics applied to Red phosphorescent organic light-emitting devices. The structure of ITO/2-TNATA(15nm)/CBP;$Ir(piq)_3$/DPVBi(30nm)/New ETL(60nm)/LiF(0.5nm)/Al(100nm) has been used, measured changing doping concentration of EML. The results of OLED turn-on voltage at 2.2V, and Maximum Luminance at 2.8V was $1000cd/m^2$. This high luminance at low voltage results from a high electron. conduction of the new electron transport layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.276-277
• /
• 2006

본 연구에서는 인광 발광 물질인 host재료, CBP에 guest로 인광색소인 $Ir(ppy)_3$을 첨가하여 광학적, 전기적 특성을 보았다. $Ir(ppy)_3$ 색소를 서로 다른 중량비로 첨가할 때의 소자들의 특성을 평가하였다.$ Ir(pppy)_3$을 3.125%의 중량비로 하였을 때 가장 좋은 휘도특성을 보였다. 소자의 기본구조는 glass/ITO/${\alpha}-NPD(300{\AA})$/CBP:$Ir(ppy)_3(300{\AA})$/$BCP(80{\AA})$/$Alq_3(200{\AA})$)/$Al(1000{\AA})$로 하였다.

• YAKHAK HOEJI
• /
• v.7 no.1
• /
• pp.26-29
• /
• 1963

Three systems such as CaS, BaS and ZnS are used as ground materials and transition elements such as Bi, Cu, Ag and Ni are used as activators to preared phosphorescent materials of strong after-grow intensity. These three systems in which we have 31 kinds of different composition samples are heated at given temperatures in the electrical furnace and are cooled in the air in order to crystallize them. In the case of BaS system, the mixture of CaO and purified S is better than the other kinds of calcium compound as the ground materials to crystallize phosphors. In BaS system, the mixture of BaCO$_{3}$ and purified S, in ZnS system ZnS respectively is the most proper ground material to prepare such a strong after-grow intensified phosphors. In a given range, the higher in temperature and the longer time of heating, the better phosphors we obtain.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.189-192
• /
• 2008

A 5.8-inch wide-QQVGA flexible full-color active-matrix OLED display was fabricated on a plastic substrate. Low-voltage-operation organic TFTs and high-efficiency phosphorescent OLEDs were used as the backplane and emissive pixels, respectively. The fabricated display clearly showed color moving images when the driving voltage was below 15 V.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.171-174
• /
• 2008

We present results demonstrating that low power consumption phosphorescent AMOLED displays can be fabricated on ultra-thin ($25{\mu}m$) stainless steel substrates, combining an amorphous silicon backplane with a top emission phosphorescent OLED frontplane. We will present preliminary results of flexibility testing on these displays.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.30-33
• /
• 2008

Using a $Ir(ppy)_3$ doped in hole and electron transport host materials, simple three layers green PHOLEDs comprising double emissive layers have been fabricated. A low driving voltage value of 3.3 V to reach a luminance of $1000\;cd/m^2$ and maximum current- and power-efficiency values of 53.9 cd/A and 57.8 lm/W are demonstrated in this simple structure phosphorescent OLED.