• E2M - 전기 전자와 첨단 소재
• /
• 제16권9호
• /
• pp.62.3-63
• /
• 2003

• 한국세라믹학회:학술대회논문집
• /
• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
• /
• pp.81.2-81.2
• /
• 2000

• 한국세라믹학회:학술대회논문집
• /
• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
• /
• pp.90.2-90
• /
• 2000

• 한국초전도학회:학술대회논문집
• /
• 한국초전도학회 2009년도 Korea Superconductivity Society Meeting 2009
• /
• pp.8-8
• /
• 2009

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2003년도 제25회 학술발표회 초록집
• /
• pp.168-168
• /
• 2003

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2007년도 추계학술대회 논문집
• /
• pp.3-3
• /
• 2007

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
• /
• pp.167-167
• /
• 2003

현대 산업이 발전함에 따라 전자부품의 초소형화, 고성능화가 요구되어지고 있으며, 이러한 점에 부응하기 위하여 Pottier 효과를 이용하여 국부냉각이 가능한 열전재료에 대한 많은 연구가 이루어지고 있다. 열전재료에는 사용온도 영역에 따라 여러 종류가 있지만, Bi-Te계 열전재료는 상온영역에서 가장 성능지수(Z=$\alpha$$^2$$\sigma$/$textsc{k}$, $\alpha$는 Seebeck 계수, $\sigma$는 전기전도도, $textsc{k}$는 열전도도)가 높아 각종 냉각소자로서 사용되어 지고 있다. 하지만, 초소형 전자부품의 국부냉각을 위해서는 성능지수의 향상, 특히, 저온 영역에서의 성능지수의 향상이 요구되고 있다. 본 연구에서는 Bi-Te계 열전재료의 성능지수를 향상시키기 위하여, 열전도도의 저하에 의한 성능지수의 향상을 연구목적으로 하였다 열전도도는 전자에 의한 열전도도(K$_{e}$)와 phonon에 의한 열전도도(K$_{p}$)로 이루어지며, 전기전도도에 큰 영향을 미치지 않는 결정립 사이즈영역에서 결정립의 크기를 미세화 하면, 결정입계에서의 phonon의 산란이 증가하여 phonon에 의한 열전도도를 저하시킴으로서 성능지수의 향상이 기대된다. 따라서 본 연구에서는 나노사이즈 분말의 제조에 많이 이용되며 입자크기의 조절이 용이한 공침법을 이용하여 Bi-Te계 열전재료 분말을 제조하고 열전재료에의 적용가능성을 검토하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.304.2-304.2
• /
• 2014

Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.288.1-288.1
• /
• 2014

We investigated the optical properties of Ge1-xSex and Ge1-x-ySexAsy amorphous semiconductor films using spectroscopic ellipsometry and Raman spectroscopy. The dielectric functions and absorption coefficients of the amorphous films were determined from the measured ellipsometric angles. We obtained the optical gap energies and Urbach energies from the absorption coefficients, and found a strong bowing effect in the optical gap energy of Ge1-x-ySexAsy where the endpoint binaries were Ge0.50Se0.50 and Ge0.31As0.69. Based on the correlation between optical gap energies and Urbach energies, the large bowing parameter was attributed to the electronic disorder. We found the composition dependence of several phonon modes using Raman spectroscopy. For Ge1-x-ySexAsy, the D mode (232-267 cm-1) changed from As-As (or As3 pyramid), to As(Se1/2)3 pyramid, and finally to Se clusters, as the Se composition increased. Resonant Raman phenomenon was observed in Ge0.38Se0.62 at a laser excitation of 514 nm (2.41 eV). We verified that this laser energy corresponds to the transition energy of Ge0.38Se0.62 using the second derivative of the dielectric function of Ge0.38Se0.62.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2018년도 춘계학술대회 논문집
• /
• pp.52-52
• /
• 2018

Only approximately 30% of fossil fuel energy is used; therefore, it is desirable to utilize the huge amounts of waste energy. Thermoelectric (TE) materials that convert heat into electrical power are a promising energy technology. The TE materials can be formed either as thin films or as bulk semiconductors. Generally, thin-film TE materials have low energy conversion rates due to their thinness compared to that in bulk. However, an advantage of a thin-film TE material is that the efficiency can be smartly engineered by controlling the nanostructure and composition. Especially nanostructured TE thin films are useful for mitigating heating problems in highly integrated microelectronic devices by accurately controlling the temperature. Hence, there is a rising interest in thin-film TE devices. These devices have been extensively investigated. It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (${\kappa}$) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (${\mu}$) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In-Zn-O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was measured to have poor ${\kappa}$ and high electrical conductivity compared to crystalline $In_2O_3:Sn$ (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in the transparent display devices.