• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1432-1433
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• 2006

$Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics were fabrication by sol-gel method. Sintering temperature must be suited to the LTCC technology. Structure and dielectric properties were investigated for effect of $Li_{2}CO_3$ dopants at BST. Structure of $Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics were dense and homogeneous with almost no pore. Relative permittivity was decreased and dielectric loss was increased with increasing $Li_{2}CO_3$ doping rations. In the case of the 3wt% $Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics sintered at $900^{\circ}C$, relative permittivity and dielectric loss were 907 and 0.003 at 100 kHz.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.11
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• pp.511-516
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• 2002

$TiO_2-SnO_2$ thin films are fabricated using sol-gel method. In case the amount of water required hydrolysis smaller than that for stoichiometry, Ti sol forms clear sol which has normal chain structure. On the contrary, in case the amount of water required hydrolysis larger than that for stoichiometry, Ti sol forms suspended sol which has cluster structure. The thickness of thin films increase about $0.03{\sim}0.04{\mu}m$ every a dipping. The permittivity and dissipation factor of $TiO_2-SnO_2$ thin films decrease with increasing frequency. Thin films show semiconductive characteristics above $400^{\cric}C$.

• Journal of the Korean Ceramic Society
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• v.24 no.3
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• pp.270-276
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• 1987

The microstructure and dielectric properties of a SrTiO3-based GBL (Grain Boundary Layer) capacitor were investigated. The 0.6 mol% Nb2O5 doped SrTiO3 was sintered for 3 hr at 1450$^{\circ}C$ in mixed gas(N2/H2) atmosphere. The Nb2O5 promoted the grain growth of the SrTiO3 ceramics was decreased with the amount of Nb2O5. The oxide mixture(PbO, Bi2O3, B2O3) were painted on the reduced specimen and fired at 1000$^{\circ}C$ to 1100$^{\circ}C$ in air. The penetrated oxide mixture into specimen were located in grain boundaries. A SrTiO3-based GBL capacitor had the apparent permittivity of about 3.0${\times}$104, the dielectric loss of 0.01-0.02, and insulating resistance of 108-109$\Omega$.cm. The capacitor had the stable temperature coefficient of capacitance and exhibited dielectric dispersion over 107 Hz. The capacitance-voltage measurements indicated that the grain boundary was composed of the continuous insulating layers.

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.915-921
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• 1995

The morphotropic phase boundary and phase transitions of the solid solutiion system, (1-x)(Na1/2Bi1/2)TiO3-PbTiO3＋xPbTiO3 were studied by investigating changes in crystal structure, variations in permittivity with temperature, and calorimetric behavior. It was observed that the morphotropic phase boundary (MPB) of this solid solutiion system was at near 14 mol% of PbTiO3. Compositions containing less than 10mol% PbTiO3 (x<0.1) exhibited a phase transition, i.e. ferroelectric rhombohedrallongrightarrowparaelectric paraelectric cubic, with increasing temperature. Composition containing more than 14 mol% PbTiO3 (x 0.14) showed a phase transition from ferroelectric tetragonal to paraelectric cubic. In the composition range of 0.1$\varepsilon$ (T) curve, which coincided with a phase transition from ferroelectric rhombohedral to an intermediate phase, was also found.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.290-294
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• 2001

In this study, ZnO is evaporated to be coated on n-type Si wafer substrate. Refractive coefficient of thin film that is evaporating TiO$_2$ onto ZnO increases linearly as thickness is getting thinner to have high value and high angle and it satisfies theoretical equation I(x)=Io exp (-$\alpha$x) theory that represents the strength of photon energy advancing through ZnO thin film. And dielectric constant of TiO$_2$ thin film evaporated onto ZnO is high and $\varepsilon$$_2$ is smaller than $\varepsilon$$_1$. The specimen TiO$_2$ thin film evaporated onto ZnO has much higher dielectric constant when photon energy is increased.

• 전기의세계
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• v.28 no.5
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• pp.39-43
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• 1979

The aging of permittivity of a barium titanate dielectrics doped with La$_{2}$O$_{3}$ under zero and low DC field has been studied. The aging rate was decreased as the amount of La$_{2}$O$_{3}$ addition is increased to 3 mole%. The zero field aging rate of barium titahate doped with La$_{2}$O$_{3}$. 3TiO$_{2}$ was similar to that doped with La$_{2}$O$_{3}$.5V/mil DC field aging rate of La$_{2}$O$_{3}$.3TiO$_{2}$ doped sample, howeve, was lowered to that of La$_{2}$O$_{3}$ doped sample. When the phase transformation is occured from the paraelectric state to the ferroelectric state, 90.deg. domains are mucleated in order that the system becomes thermodynamically more stable. It is concluded that the aging phenomenon is occured as the dielectric constant is decreasing by the nucleation and growth of 90.deg. domains.

• Journal of Korean Ophthalmic Optics Society
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• v.2 no.1
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• pp.9-16
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• 1997

Ferroelectric $Pb_5Ge_{3-x}Ti_xO_{11}$(x=0, 0.015, 0.021, 0.03) single crystals were obtained from the melt by the Czochralski method. Grown crystals were pale brownish yellow and fully transparent. The dielectric relaxation of the $Pb_5Ge_{3-x}Ti_xO_{11}$ single crystals has been studied in the frequency range from 100 Hz to 10 MHz between $20^{\circ}C$ and $600^{\circ}C$. From the results of the these measurements. the temperature of the permittivity maximum was shifted to low temperature with increasing Ti content and the permittivity maximum decreased with increasing Ti content. The frequency dependent dielectric response of $Pb_5Ge_{3-x}Ti_xO_{11}$ single crystals exhibits a Debye type relaxation, with a distribution of relaxation times. Dielectric behavior is characteristic of carrier-dominated response.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.9
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• pp.826-834
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• 2004

In this paper, we fabricated thick film monopole antennas using Bi$_2$O$_3$-doped BaTi$_4$$O_{9}$ ceramics for small size and broadband intenna. In the result, the high permittivity was fixed and the quality factor was also significantly decreased by the formation of secondary phase of Bi$_4$Ti$_3$O$_{12}$ repleced by addtion Bi. The antenna property influenced by the quality value more than the permittivity. The bandwidth of antenna was increased to 33 %. On the other hand, the gain was reduced to -4.3 dBi. Also radiation patterns were showed low dBi value by increasing of dielectric loss. Specially, Measured x-y plane radiation patterns was distorted as the dispersion of wavelength and high permittivity difference. But the result is showed execellent bandwidth because of low quality value in all formation range.nge.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.31.2-31.2
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• 2011

We have investigated frequency dependant conductivity (or permittivity) of low dimensional oxide structures represented by [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/1$[SrTiO_3]_n$ superlattices. The low dimensional oxide superlattice was made by cumulative stacking of one unit cell thick La doped $SrTiO_3$ and $SrTiO_3$ with variable thickness from 1 to 6 unit cell, i,e, [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/$[SrTiO_3]_n$ (n=1, 2, 3, 4, 5, 6). We found two kinds of relaxation when n is 3 and 4, while, inductance component was observed at n=1. This behavior can be explained by electron modulation in ($Sr_{0.75}$, $La_{0.25}$)$TiO_3/SrTiO_3$ superlattices. When n is 1, electrons by La doping well extend to un-doped layer. Therefore, the transport of superlattices follows bulk-like behavior. On the other hand, as n increased, the doped electrons became two types of carrier: one localized and the other extended. These results in two kinds of transport phase. At further increase of n, most of doped electrons are localized at the doped layer. This result shows that dimensionality of the oxide structure significantly affect the transport of oxide nanostructures.

• Journal of Powder Materials
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• v.16 no.1
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• pp.33-36
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• 2009

In order to increase the magnetic loss for electromagnetic(EM) wave absorption, the soft magnetic $Fe_{73}Si_{16}B_7Nb_3Cu_1$(at%) alloy strip was used as the basic material in this study. The melt-spun strip was pulverized using an attrition mill, and the pulverized flake-shaped powder was crystallized at $540^{\circ}C$ for 1h to obtain the optimum grain size. The Fe-based powder was mixed with 2 wt% $BaTiO_3$, $0.3{\sim}0.6$ wt% carbon black, and polymer-based binders for the improvement of electromagnetic wave absorption properties. The mixture powders were tape-cast and dried to form the absorption sheets. After drying at $100^{\circ}C$ for 1h, the sheets of 0.5 mm in thickness were made by rolling at $60^{\circ}C$, and cut into toroidal shape to measure the absorption properties of samples. The characteristics including permittivity, permeability and power loss were measured using a Network Analyzer(N5230A). Consequently, the properties of electromagnetic wave absorber were improved with the addition of both $BaTiO_3$ and carbon black powder, which was caused by the increased dielectric loss of the additive powders.