• Applied Science and Convergence Technology
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• 제24권3호
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• pp.67-71
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• 2015

InP/InGaP quantum structures (QSs) were grown on GaAs (001) substrates by a migration-enhanced molecular beam epitaxy method. Temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL (TRPL) were performed to investigate the optical properties of InP/InGaP QSs as a function of migration enhanced epitaxy (MEE) growth cycles from 2 to 8. One cycle for the growth of InP QS consists of 2-s In and 2-s P supply with an interruption time of 10 s after each source supply. As the MEE growth cycle increases from 2 to 8, the PL peak is redshifted and exhibited different (larger, comparable, or smaller) bandgap shrinkages with increasing temperature compared to that of bulk InP. The PL decay becomes faster with increasing MEE cycles while the PL decay time increases with increasing emission wavelength. These PL and TRPL results are attributed to the different QS density and size/shape caused by the MEE repetition cycles. Therefore, the size and density of InP QSs can be controlled by changing the MEE growth cycles.

• ETRI Journal
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• 제23권3호
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• pp.97-105
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• 2001

$1.6\;{\mu}m$ emission originated from $Pr^{3+}:\;(^3F_3,\;^3F_4)\;{\longrightarrow}\;^3H_4$ transition in $Pr^{3+}-\;and\;Pr^{3+}/Er^{3+}$-doped selenide glasses was investigated under an optical pump of a conventional 1480 nm laser diode. The measured peak wavelength and fullwidth at half-maximum of the fluorescent emission are ~1650nm and 120nm, respectively. A moderate lifetime of the thermally coupled upper manifolds of ${\sim}212{\pm}10{\mu}s$ together with a high stimulated emission cross-section of ${\sim}(3{\pm}1){\times}10^{-20}\;cm^2$ promises to be useful for $1.6{\mu}m$ band fiber-optic amplifiers that can be pumped with an existing high-power 1480 nm laser diode. Codoping $Er^{3+}$ enhances the emission intensity by way of a nonradiative $Er^{3+}:\;^4I_{13/2}\;{\longrightarrow}\;Pr^{3+}:\;(^3F_3,\;^3F_4)$ energy transfer. The Dexter model based on the spectral overlap between donor emission and acceptor absorption describes well the energy transfer from $Er^{3+}$ to $Pr^{3+}$ in these glasses. Also discussed in this paper are major transmission loss mechanisms of a selenide glass optical fiber.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1045-1057
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• 2009

The authors investigated the InGaN/GaN multi-quantum well blue light emitting devices with the implementation of the photonic crystals fabricated at the top surface of p-GaN layer and the bottom interface of n-GaN layer. The top photonic crystals result in the lattice-dependent photoluminescence spectra at the wavelength of 450 nm and however, the bottom photonic crystal shows a big shift of the photoluminescence peak from 444 nm to 394 nm. The sample with the bottom photonic crystal structure also shows the lasing effect at the wavelength of 468 nm. Furthermore, the quality enhancement for the crystal growth of GaN thin film on the bottom photonic crystal comes from the modulated compressive stress which was measured by the micro-Raman spectroscopy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.131-134
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• 2000

Electroluminescent[EL] from conjugated polymers has recently received great attention because polymer light-emitting diodes[LEDs] clearly have potential for applications such as large-area displays. The operation of polymer LEDs is based on double injection of electrons and holes from the electrodes, followed by formation of excitons whose radiative decay results in light emission at wavelength characteristic to the material In this paper, we fabricated the single layer EL device using poly(3-octylthiophene)[P3OT] as emitting material. The orange-red light was clearly visible in a dark room Maximum peak wavelength of EL spectrum saw at 640nm in accordance with photon energy 1.9eV. And we know that ionization energy of P3OT is 4.7eV from the cyclic voltammetry.

• Journal of the Optical Society of Korea
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• 제14권4호
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• pp.395-402
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• 2010

This study reports a portable and precision photonic biosensor reader that can measure the concentration of a particular antigen using an optical resonant reflection biosensor (ORRB). To create a compact biosensor reader, a compact tunable vertical-cavity surface-emitting laser (VCSEL) and a compact built-in wavelength meter were manufactured. The wavelength stability and accuracy of the compact built-in wavelength meter were measured to be less than 0.02 nm and 0.06 nm, respectively. The tunable VCSEL emission wavelength was measured with the compact built-in wavelength meter, it has a fast sweep time (~ 10 seconds) and a wide tuning range (> 4 nm) that are sufficient for biosensor applications based on ORRB. The reflection spectrum of a plastic based ORRB chip was measured by the fabricated portable photonic biosensor reader using the VCSEL and wavelength meter. Although the reader is the size of a palmtop device, it could make a precise measurement of the peak wavelength on equal terms with a conventional bulky optical spectrometer.

• 한국세라믹학회지
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• 제45권8호
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• pp.477-481
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• 2008

$Eu^{2+}$ and $Dy^{3+}$ co-doped strontium aluminate, $SrAl_2O_4$ long phosphorescent phoshor was fabricated and its photoluminescence was characterized. The phosphor, $SrAl_2O_4:Eu^{2+},Dy^{3+}$ was synthesized by a coprecipitation in which metal salts of $Sr(NO_3)_2$, $Al(NO_3)_3{\cdot}9H_2O$, were dissolved in $(NH_4)_2CO_3$ solution with adding $Eu(NO_3)_3{\cdot}5H_2O$ and $Dy(NO_3)_3{\cdot}5H_2O$ as a activator and co-activator, respectively. The coprecipitated products were separated from solution, washed, and dried in a vacuum dry oven. The dried powders were then mixed with 3 wt% $B_2O_3$ as a flux and heated at $800{\sim}1400^{\circ}C$ for 3 h under the reducing ambient atmosphere of 95%Ar+$5%H_2$ gases. For the synthesized $SrAl_2O_4:Eu^{2+},Dy^{3+}$, properties of photoluminescence such as emission, excitation and decay time were examined. The emission intensity increased as the annealing temperature increased and showed a maximum peak intensity at 510 nm with a broad band from $400{\sim}650\;nm$. Monitored at 520 nm, the excitation spectrum showed a maximum peak intensity at $315{\sim}320\;nm$ wavelength with a broad band from $200{\sim}500\;nm$ wavelength. The decay time of $SrAl_2O_4:Eu^{2+},Dy^{3+}$ increased as the annealing temperature increased.

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.150-155
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• 1997

Powder type electroluminescent device(P-ELD) in this study was prepared by printing method. P-ELDs were basically composed of phosphor, insulator and transparent conducting layer. The phosphor powder was prepared by sintering the mixture of ZnS as a host, Cu as an activator, and NaCl as a flux for co-activator and enhancement of growth of the phosphor particles. The phosphor layer was made by printing the paste of the cyanoethylpullan as a binder and the ZnS system phosphor powder. In order to evaluate the luminescence characteristics of ZnS P-ELD, applied voltage - luminance(V-L), frequency-luminance(f-L), and relative luminance spectra(L- .lambda.) characteristics were measured. The experimental results show that luminance increased with increasing the applied voltage and frequency. It can be explained in terms of the potential barrier formed between ZnS and CuS. Two emission peaks in luminance-wavelength spectra measured at applied voltage of 100 $V_{rms}$ were observed at 500nm as a primary peak and 460nm as a secondary peak, respectively.y.

• 한국결정성장학회지
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• 제27권1호
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• pp.42-46
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• 2017

스컬용융법으로 $SrAl_2O_4$ : $Eu^{2+}$,$Dy^{3+}$ 형광체 합성을 하였으며, 합성한 형광체의 산화물 몰비는 $SrCO_3$ : $Al(OH)_3$ : $Eu_2O_3$ : $Dy_2O_3$= 1 : 2 : 0.015 : 0.02였다. 결정구조 및 표면 형상은 X-선 회절분석과 주사전자현미경으로 규명하였다. 합성한 $SrAl_2O_4$ : $Eu^{2+}$,$Dy^{3+}$의 광학적 특성인 여기, 발광 및 장잔광 특성의 심도 있는 연구를 위해 PL(photoluminescence) 분광계로 측정하였다. PL 측정을 통해 360 nm 영역에서 여기(excitation)되고, 300~420 nm의 파장까지 여기가 일어남을 확인하였다. 발광(emission)스펙트럼은 450~600 nm의 파장에서 폭넓은 스펙트럼을 보였으며, 530 nm에서 최대 발광파장을 나타내었다. $SrAl_2O_4$ : $Eu^{2+}$,$Dy^{3+}$ 형광체는 오랜 시간 동안 발광하는 장잔광 특성을 나타내었다.

• 전자공학회논문지D
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• 제35D권8호
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• pp.24-30
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• 1998

A blue LED of $In_{x}Ga_{1-x}N$ multiple quantum well structure which had the blue emission spectrum of donor-acceptor pair transition generated form Si-Zn co-doped $In_{x}Ga_{1-x}N$ active layer, was fabricated. The $In_{x}Ga_{1-x}N$ MQW heterojunction LED structure was grown by MOCVD on the sapphire substrate with (0001) surface orientation at 800.deg. C. The fabricated LED exhibited forward cut-in voltage of 4~4.5V and reverse breakdown voltage of -13V. Its optical chracteristics showed that the center wavelength of peak emission occurred at 460nm and the optical intensity was increased linearly with respect to the injected electrical current above 5mA.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.739-742
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• 2000

Nanostructured ZnS thin films were grown on the slide glass substrate by the chemical bath deposition using an aqueous so1ution Of ZnSO$_4$and CH$_3$CSNH$_2$at 95$^{\circ}C$. The average grain sizes of the ZnS thin film estimating from the Debye-Scherrer formula are 4.8 nm. The optical transmittance edge of the ZnS thin films (4.0 eV) was shifted to the shelter wavelength compared with that of the bulk ZnS (3.67 eV) due to the quantum size effects. The ZnS thin films showed a strong photoluminescence intensity and a sharp emission band from 410 to 480 nm 3t room temperature. The PWHM of photoluminescence peak was about 40 nm. For the viloet(410 nm) and blue(480 nm) emission of the ZnS thin films, the temperature dependence can be described by an Arrhenius equation with an activation energy of 168 and 157 meV, respectively.