• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1090-1092
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• 2006

There is provided white light illumination system including a radiation source, a first luminescent material having a peak emission wavelength of about 575 to about 620 nm, a second luminescent material having a peak emission wavelength of about 495 to about 550 nm, which is different from the first luminescent material and a third luminescent material having a peak emission wavelength of about 420 to about 480 nm, which is different from the first and second luminescent materials. The LED may be a UV LED and the luminescent materials may be a blend of three phosphors. A human observer perceives the combination of the blue, green and red phosphor emissions as white light.

• Journal of the Korean Society of Visualization
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• v.12 no.3
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• pp.9-14
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• 2014

Two-photon microscopy (TPM) has been used in plant research as a high-resolution high-depth 3D imaging modality. However, TPM is known to induce photo-damage to the plant in case of long time exposure, and optimal excitation wavelength for plant imaging has not been investigated. Longer excitation wavelength may be appropriate for in vivo two-photon imaging of Arabidopsis thaliana leaves, and effects of longer excitation wavelength were investigated in terms of imaging depth, emission spectrum. Changes of emission spectrum as a function of exposure time at longer excitation wavelength were measured for in vivo longitudinal imaging. Imaging depth was not changed much probably because photon scattering at the cell wall was a limiting factor. Chloroplast emission spectrum showed its intensity peak shift by 20 nm with transition of excitation wavelength from 849 nm or below to 850 nm or higher. Emission spectrum showed different change patterns with excitation wavelengths in longitudinal imaging. Longer excitation wavelengths appeared to interact with chloroplasts differently in comparison with 780 nm excitation wavelength, and may be good for in vivo imaging.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.164-170
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• 2012

The dependance of degradation on the blue-peak wavelength is investigated with the blue light-emitting diode (LED) of InGaN/GaN with respect to the optical and the electrical characteristics of the devices. The LED devices emitting the blue-peak wavelength ranging from 437 nm to 452 nm is prepared to be stressed for a long aging time with three different currents of 60 mA, 75 mA and 90 mA, respectively. The degradation of optical intensity is observed with and without phosphor in the devices. The device without phosphor has been degraded significantly as the wavelength of blue-peak is decreased while the optical intensity of LED device with phosphor become less sensitive than that of device without phosphor. The electrical property does not depend on the emission peak wavelength. However, the series-resistance of LED device is slowly increased as the aging time is increased. The deformation of device is observed severely the short wavelength of blue-peak even with the same current since the short wavelength is absorbed substantially at the materials of device during the aging time. Consequently, in order to enhance the lifetime of LED devices, it is important to understand the optical degradation property of the materials against the specific wavelengths emitted from the blue chip.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.198-202
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• 2007

A new organic light emitting device(OLED) with two peak wavelength(blue and yellow) emission was fabricated using the selective doping in a single fluorescent host , and its electrical and optical characteristics were investigated. The fabricated device showed the luminance and efficiency of 1600 $Cd/m^2$ and 2.4 Im/W under the applied voltage of 10V, respectively. And its electroluminescent spectra had two peak wavelengths of 470nm and 560nm emitting bluish white light. The OLED with dual wavelength emission in this experiment is likely to be developed as a white OLED with simpler fluorescent system than conventional devices.

• Bulletin of the Korean Chemical Society
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• v.25 no.6
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• pp.801-805
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• 2004

In this work, the fundamental study of on-line monitoring of $SiO_2$ particles in the size range of 40 nm to 725 nm was carried out using turbidimetry. The size of particle was measured using a field emission scanning electron microscope (FE-SEM). The factors affecting on the turbidity were discussed, for example, wavelength, size, and concentration. In order to observe the dependence of turbidity on the wavelength, a turbidimetric system equipped with charged coupled detector (CCD) was built. The shape of the transmitted peak was changed and the peak maximum was shifted to the red when the concentration of particle was increased. This result indicates that the turbidity is related to the wavelength, which corresponds to the characteristic of the Mie extinction coefficient, Q, that is a function of not only particle diameter and refractive index but also wavelength. It is clear that a linear calibration curve for each particle in different size can be obtained at an optimized wavelength.

• Bulletin of the Korean Chemical Society
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• v.21 no.8
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• pp.769-773
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• 2000

The dependence of photoluminescence (PL) and photoluminescence itation (PLE) on preparation condi-tions and the aging of porous silicon carbide (PSC) have been investigatted. The fiber size of the material pre-pared under dark-current mode, labele d DCM, was larger than that of the photoassisted (PA)process.The intensity of the PL spectrum for the PA condition was higher than that of the DCM condition. The PA condition giving small fiber size exhibited amore prominent high-energy component but the emission bands of both con-ditionsobserved were rather similar. The origin of the PL may have played an importantrole in the surface defect center introduced by the reaction conditions ofHFatthe surface of the silicon carbide. Selective excita-tion of the PL bandsusingdifferent excitation wavelengths has been used to identify distinct componentswith-in the PL bandwidth. Two main PL bands with peak wavelength of494 and534 nm were clearly resolved. On the other hand, selectivc emission of the PLEbands using different emission wavelengths has been used to identify distinct components within the PLE bandwidth. The higher energy band with peak wavelength of 338 nm and the lower energy bands involving 390,451 and 500 nm were clearly resolved. According to the pro-ionged aging in air, PL spectra appearedasone band, This emission probably originated from states localized to the band-to-band recombination due to the oxidation on the crystallite surface.

• Applied Science and Convergence Technology
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• v.25 no.4
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• pp.81-84
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• 2016

InP/InGaP quantum structures (QSs) grown on GaAs substrates by a migration-enhanced molecular beam epitaxy method were studied as a function of growth temperature (T) using photoluminescence (PL) and emission-wavelength-dependent time-resolved PL (TRPL). The growth T were varied from $440^{\circ}C$ to $520^{\circ}C$ for the formation of InP/InGaP QSs. As growth T increases from $440^{\circ}C$ to $520^{\circ}C$, the PL peak position is blue-shifted, the PL intensity increases except for the sample grown at $520^{\circ}C$, and the PL decay becomes fast at 10 K. Emission-wavelength-dependent TRPL results of all QS samples show that the decay times at 10 K are slightly changed, exhibiting the longest time around at the PL peak, while at high T, the decay times increase rapidly with increasing wavelength, indicating carrier relaxation from smaller QSs to larger QSs via wetting layer/barrier. InP/InGaP QS sample grown at $460^{\circ}C$ shows the strongest PL intensity at 300 K and the longest decay time at 10 K, signifying the optimum growth T of $460^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.57-58
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• 2008

We have studied an organic layer and semitransparent Al electrode thickness dependent optical properties and microcavity effects for top-emission organic light-emitting diodes. Manufactured top-emission device structure is Al(100nm)/TPD(xnm)/Alq(ynm)/LiF(0.5nm)/Al(25nm). While a thickness of total organic layer was varied from 85nm to 165n, a ratio of those two layers was kept to be about 2:3. Semitransparent Al cathode was varied from 20nm to 30nm for the device with an organic layer total thickness of 140nm. As the thickness of total organic layer increases, the emission spectra show a shift of peak wavelength from 490nm to 580nm, and the full width at half maxima from 90nm to 35nm. The emission spectra show a blue shift as the view angle increases. Emission spectra depending on a transmittance of semitransparent cathode show a shift of peak wavelength from 515nm to 593nm. At this time, the full width at half maximum was about to be a constant of 50nm. With this kind of microcavity effect, we were able to control the emission spectra from the top-emission organic light-emitting diodes.

• Transactions on Electrical and Electronic Materials
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• v.10 no.1
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• pp.28-30
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• 2009

We have studied organic layer-thickness dependent electrical and optical properties of bottom- and top-emission devices. Bottom-emission device was made in a structure of ITO(170 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(100 nm), and a top-emission device in a structure of glass/Al(100 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(25 nm). A hole-transport layer of TPD (N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine) was thermally deposited in a range of 35 nm and 65 nm, and an emissive layer of $Alq_3$ (tris-(8-hydroxyquinoline) aluminum) was successively deposited in a range of 50 nm and 100 nm. Thickness ratio between the hole-transport layer and the emissive layer was maintained to be 2:3, and a whole layer thickness was made to be in a range of 85 and 165 nm. From the current density-luminance-voltage characteristics of the bottom-emission devices, a proper thickness of the organic layer (55 nm thick TPD and 85 nm thick $Alq_3$ layer) was able to be determined. From the view-angle dependent emission spectrum of the bottom-emission device, the peak wavelength of the spectrum does not shift as the view angle increases. However, for the top-emission device, there is a blue shift in peak wavelength as the view angle increases when the total layer thickness is thicker than 140 nm. This blue shift is thought to be due to a microcavity effect in organic light-emitting diodes.

• The Bulletin of The Korean Astronomical Society
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• v.43 no.1
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• pp.68.2-68.2
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• 2018

Spectroscopic observations commonly use a slit or fiber; however, non-slit spectroscopy enables us to observe a larger number of targets in one frame of image. Hence, it has been adopted as an observational mode for observatories like HST and JWST. Slitless spectroscopy requires wavelength calibration solutions in order to distinguish and measure the absorption / emission lines from the spectra with high accuracy. We installed the Volume Phase Holographic (VPH) grating to SQUEAN camera on the McDonald 2.1m telescope and obtained images with spectral resolutions of ~ 100 and 200. In order to derive the wavelength calibration, we measured the distances between the 0th order images and spectral features of various quasars. The distances are converted to wavelengths using the known wavelengths of the emission lines. We tested several different methods of spectral extraction and peak estimation of emission lines. We will present the results for the wavelength calibration and suggest the reliable methods to find the solution.