• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• 감성과학
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• 제16권1호
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• pp.107-116
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• 2013

P300 문자입력기에 사용되는 대표적인 자극제시방법은 행-열 패러다임(RCP)이다. 그러나 RCP는 근접-혼동 오류와 이중-깜박임 문제를 가지고 있다. 본 연구에서는 RCP가 가지고 있는 두 가지 오류의 원천을 효과적으로 통제하는 하위블록 패러다임(SBP)을 제안하고 검증하였다. 15명의 실험참가자에게 RCP와 SBP를 모두 사용하여 문자를 입력하도록 하였다. 뇌파는 Fz와 Cz, Pz, P3, P4, PO7, PO8에서 측정하였다. 각 패러다임은 분류기를 학습시키기 위한 훈련단계와 문자입력기의 성능을 평가하기 위한 검사단계로 구성되어 있다. 훈련단계에서 18개의 문자를 입력하였으며, 검사단계에서 5명은 50개의 단어를 입력하였고 나머지 10명은 25개의 단어를 입력하였다. 정확도를 산출한 결과, SBP의 정확도는 83.73%로 RCP의 정확도 66.40%보다 통계적으로 유의하게 더 높았다. Pz에서 측정한 ERP를 분석하였을 때, 목표자극에 대한 정적 정점의 진폭이 RCP보다 SBP에서 더 크게 나타나 실험참가자들이 SBP에서 특정 문자에 더 많은 주의를 집중한 것으로 보인다. P300 문자입력기에 대한 사용용이성을 7점 척도로 측정하였을 때, SBP가 RCP보다 더 사용하기 쉬운 것으로 나타났다. 특히 RCP의 사용용이성은 대부분의 실험참가자들이 '힘들었다'는 범주에 응답한 반면, SBP의 사용용이성은 모든 피험자들이 '보통'과 '쉬웠다'의 범주에 응답하였다. 전반적으로 SBP가 RCP보다 우월한 것으로 평가되었으며, 논의에 SBP의 한계점에 대해서 기술하였다.