• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1550-1551
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• 2006

An L-band linear accelerator system for e-beam sterilization is under design for bio-technology application. The klystron-modulator system as RF microwave source has an important role as major components to offer the system reliability for long time steady state operation. A PFN line type pulse generator with a peak power of 71.5-MW, $7{\mu}s$, 285 pps is required to drive a high-power klystron. The high power pulse transformer has a function of transferring pulse energy from a pulsed power source to a high power load. The pulse transformer producing a pulse with a peak voltage of 275 kV is required to produce 30-MW peak and 60 kW average RF output power at the frequency of 1.3-GHz. We have designed the high power pulse transformer with 1:13 step-up ratio. The peak and average power capability is 71.5-MW (275 kV, 260 A at load side with $7{\mu}s$ pulse width) and 130 kW, respectively. In this paper, we present a system overview and initial design results of the high power pulse transformer.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1079-1081
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• 2007

An L-band Linear Accelerator System for E-beam sterilization is under construction for bio-technology application. The klystron-modulator system as an RF microwave source has an important role as major components to offer the system reliability for long time steady-state operations. A PFN line type pulse generator with a peak power of 71.5-MW, $7\;{\mu}s$, 285 pps is required to drive a high-power klystron. The high power pulse transformer has a function of transferring pulse energy from a pulsed power source to a high power load. The pulse transformer producing a pulse with a peak voltage of 275 kV is required to produce 30-MW peak and 60 kW average RF output power at the frequency of 1.3-GHz. We have designed the high power pulse transformer with 1:13 step-up ratio. The peak and average power capability is 71.5-MW (275 kV, 260 A at load side with $7\;{\mu}s$ pulse width) and 130 kW, respectively. In this paper, we present measurements and its analysis on the design parameters, and an initial test result as well as a design concept on the high-power pulse transformer.

• The Journal of Korean Physical Therapy
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• v.20 no.3
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• pp.9-18
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• 2008

Purpose: We determined the effect of global synkinesis(GS) on gait ability, muscle contraction, and central neuron action potentials in post-stroke hemiplegic subjects. Methods: Thirty hemiplegia patients were evaluated for walking ability, muscle contraction, central neuron action potential, and comparing differences between the H-GS(high-global synkinesis) group and L-GS(low-global synkinesis) group. To obtain the GS level, surface electromyography(EMG) data were digitized and processed to root mean square(RMS). Walking ability was tested with a modified motor assessment scale(MMAS), a 10 m walking test, timed up and go(TUG) test, and a Fugl-Meyer assessment(FMA). Muscle contraction ability was measured as maximal isometric contraction(MIC) peak, MIC slope, and MIC ramp up using mechanomyography(MMG). Central neuron action potential was measured as the H/Mmax ratio or V/Mmax ratio using EMG. The data were analyzed with t-tests to determine the statistical significance. Results: MMAS(p<0.01), 10 m walking velocity(p<0.01), TUG(p<0.01), FMA-HKA(Hip, Knee, Ankle)(p<0.05), FMA-coordination(p<0.05), MIC peak (p<0.05), MIC slope(p<0.01), and MIC ramp up(p<0.05) were significantly different between H-GS and L-GS, as was the V/Mmax ratio(p<0.05), but H/Mmax was not. Conclusion: Lower GS levels indicated better walking ability and motor function. Therefore, intervention programs should consider GS levels in gait training of chronic hemiplegia.

• Journal of Power Electronics
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• v.12 no.3
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• pp.418-428
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• 2012

It is very important to improve the overall efficiency of systems with a source of power that has low-voltage high-current terminal characteristics such as fuel cells. A resonant converter is required for high efficiency systems. However, the peak value of the switches current is large in a resonant converter. This peak current requires a large number of switches and results in system failures. In this paper, an analysis and experiments of a resonant isolation push-pull converter are performed. A switching loss analysis is performed in order to compare losses between a resonant push pull converter and a hard switching push-pull converter. Specially, the conduction loss is studied based on the ratio between the resonant frequency and the switching frequency. In addition, a method for improving the efficiency is implemented with conventional HF insolation converters.

• Bulletin of the Korean Space Science Society
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• 2008.10a
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• pp.31.2-31.2
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• 2008

We present the results offar ultraviolet (FUV, 1350-1750 ${\AA}$) auroral observations made by the Far-ultraviolet IMaging Spectrograph (FIMS) instrument on the Korean microsatellite STSAT-1. The instrument was capable of resolving spatial structures of a few kilometers with the spectral resolution of 2-3 ${\AA}$. The observations were carried out simultaneously with the measurement of precipitating electrons using an electrostatic analyzer (ESA, 100 eV-20 keV) and a solid state telescope (SST, 170 keV-360 keV) on board the same satellite. With a careful mapping of the field lines, we were able to correlate the particle spectrum to the corresponding FUV spectrum of the footprints of the FIMS image that varied significantly in fine scales. We divided the FIMS spectral band into the LBH long (LBHL, 1640-1715 ${\AA}$) and LBH short (LBHS, 1380-1455 ${\AA}$) bands, and compared the electron energies with the intensities of LBHL and LBHS for the well-defined inverted-V structures. The result shows a strong correlation between the total LBH intensity and the energy flux measured by ESAwhile the peak energy itself does not correlate well with the LBH intensity. On the other hand, it was observed that the ratio of the LBHL intensity to that of LBHS increased significantly as the peak electron energy increased, primarily due to a smaller absorption by O2 at LBHL than at LBHS.

• Journal of IKEEE
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• v.18 no.2
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• pp.263-271
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• 2014

This paper presents design of the second-order sigma-delta modulator for converting voltage and temperature signals to digital ones in Battery Management IC (BMIC) for mobile applications. The second-order single-loop switched-capacitor sigma-delta modulator with 1-bit quantization in 0.13-um CMOS technology is proposed. The proposed modulator is designed using switched-opamp technique for saving power consumption. With an oversampling ratio of 256 and clock frequency of 256kHz, the modulator achieves a measured 83-dB dynamic range and a peak signal-to-(noise+distortion) ratio (SNDR) of 81.7dB. Power dissipation is about 0.66 mW at 3.3 V power supply and the occupied core area is $0.425mm^2$.

• Nuclear Engineering and Technology
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• v.50 no.3
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• pp.462-469
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• 2018

The background spectrum of a $3^{{\prime}{\prime}}{\times}3^{{\prime}{\prime}}$ NaI(Tl) well-type scintillation SILENA detector was measured without shielding, in 6 cm thick lead shielding, and with 2 mm thick electrolytic copper covering the detector inside the lead shielding. The relative remaining background of the lead shield lined with copper was found to be ideal for low-level environmental radioactive spectroscopy. The background total count rate in the (20-2160 KeV) was reduced 28.7 times by the lead and 29 times by the Cu + Pb shielding. The effective reduction of background (1.04) by the copper mainly appeared in the energy range from X-ray up to 500 KeV, while for the total energy range the ratio is 1.01 relative to the lead only. In addition, a strong relation between the full-energy peak absolute efficiency and the detector well height was found using gamma-ray isotropic radiation point sources placed inside the detector well. The full-energy peak efficiency at a midpoint of the well (at 2.5 cm) is three times greater than that on the detector surface. The energy calibrations and the resolution of any single energy line are independent of the locations of the gamma source inside or outside of the well.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.719-720
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• 2009

We suggest a new approach to lower the operating voltage of plasma display devices using a piezoelectric transformer (PT). $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$ (PMNT) was used as a piezoelectric material. The Rosen-type PT, with a compact size of 10 mm ${\times}$ 20 mm ${\times}$ 0.3 mm, was fabricated on a glass substrate. The fabricated PT was operated as a half-wave vibration mode at around 80~90 kHz. The maximum voltage step-up ratio was 3 at 87.8 kHz when the input voltage was 10.32 V (peak-to-peak).

• Journal of the Korean institute of surface engineering
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• v.37 no.4
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• pp.191-195
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• 2004

Gallium or sulphur additions in $CuInSe_2$ were prepared using RF magnetron sputtering and pulsed laser deposition respectively. All of the observed thin films shows a chalcopyrite structure with the S and Ga addition increases the favourable (112) peak. The optical absorption coefficients were slightly decreased. The energy band gap of films could be shifted from 1.04 to 1.68 eV by adjusting the mole ratio of S/(S+Se) and Ga/(In+Ga). It is possible to obtain the optimum energy band gap by adding S or Ga solute at a certain ratio in favour of Se and In respectively. It is also necessary to control the ratio of Ga and S additions and to retain a certain portion of In and Se to provide better properties of thin films.

• Journal of Sensor Science and Technology
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• v.5 no.3
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• pp.87-92
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• 1996

The PLT thin films on (100) cleaved MgO single crystal substrate have been fabricated by rf magnetron sputtering using a PbO-rich target. The dependence of physical and electrical properties on the degree of c-axis orientation has been studied. The degree of c-axis orientation of PLT thin films depends on fabrication conditions. Fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, gas ratio of $Ar/O_{2}$, and rf power density were $640^{\circ}C$, 10 mTorr, 10 seem, and $1.7\;W/cm^{2}$, respectively. In these conditions, the PLT thin film showed the Pb/Ti ratio of 1/2 at the surface, the resistivity of $8{\times}10^{11}{\Omega}{\cdot}cm$, and dielectric constant of 110. The pyroelectric infrared sensors with these PLT thin films showed the peak to peak voltage of 450 m V and signal to noise ratio of 7.2.