• Journal of the Korean Chemical Society
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• v.55 no.1
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• pp.92-97
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• 2011

The effect of Group I alkali acetate promoters on vinyl acetate (VA) synthesis was evaluated. Catalyst product selectivity and ethylene conversion are compared to the unpromoted catalyst in the fixed-bed reactor with oxidation reaction of ethylene and acetic acid in gaseous phase over Pd-Au/$SiO_2$ catalyst. It was found that: a) the promoters were stabilized on the catalyst surface, b) common effect for the alkali promoted Pd-Au catalysts increaseed in product selectivity and ethylene conversion compared to unpromoted catalyst (these effects increase from top to the bottom of Group I). These promoting effect is due to the common-ion effect of acetate, present in the reaction, resulting in an increase in the activity of the catalyst. In addition a complementary theory for the effect of Au in the structure of the catalyst is proposed the imposition of distribution of palladium particles through decreasing the particle's diameter.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.128-128
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• 2012

We investigated the atomic and electronic properties of graphene grown by Pd silicidation and intercalation using LEED, STM, and ARPES. Pd was deposited on the 6H-SiC(0001) surface at RT. The formation of Pd silicide gives rise to breaking of Si-C bonds of the SiC crystal, which enables to release C atoms at low temperature. The C atoms are transformed into graphene from $860^{\circ}C$ according to the LEED patterns as a function of annealing temperature. Even though the graphene spots were observed in the LEED pattern and the Fourier transformed STM images after annealing at $870^{\circ}C$, the topography images showed various superstructures so that graphene is covered with Pd silicide residue. After annealing at $950^{\circ}C$, monolayer graphene was revealed at the surface. The growth of graphene is not limited by surface obstacles such as steps and defects. In addition, we observed that six protrusions consisting of the honeycomb network of graphene has same intensity meaning non-broken AB-symmetry of graphene. The ARPES results in the vicinity of K point showed the non-doped linear ${\pi}$ band structure indicating monolayer graphene decoupled from the SiC substrate electronically. Note that the charge neutrality of graphene grown by Pd silicidation and intercalation was sustained regardless of annealing temperature in contrast with quasi-free- standing graphene induced by H and Au intercalation. Further annealing above $1,000^{\circ}C$ accelerates sublimation of the Pd silicide layer underneath graphene. This results in appearance of the $(6r3x6r3)R30^{\circ}$ structure and dissolution of the ${\pi}$ bands for quasi-free-standing graphene.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1774-1777
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• 1996

In this paper, applicability of SI-PD(switching impulse - partial discharge) testing method was put on an attempt as a newly proposed diagnostic method for the underground distribution power cable system in Korea. For this purpose, SI-PD testing equipment was designed, and tests were performed using artificial needle-type defects integrated into the 22.9 kV CN/CV cables in drder to prove its reliability. As a result, arc noises, generated from spark gap, were considerably decreased by use of a pneumatic switch immersed into oil, and artificial needle-type defects were well detected with impulse voltage level under $2U_0$. These results imply that it is likely possible to apply SI-PD measurement method as a the nondistructive test for the 22.9 kV CN/CV cable system in Korea.

• Transactions of the Society of Information Storage Systems
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• v.1 no.2
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• pp.175-181
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• 2005

SiOB is an essential part of slim optical pickup, where the silicon mirror, LD stand, silicon PD are integrated and LD is flip chip bonded. SiOB is fabricated with bulk micromachining. Especially the fabrication of silicon wafer with stepped concave areas has many extraordinary difficulties. As a matter of fact, experiences and knowledges are rare in the fabrication of the highly stepped silicon wafer. The difficulties occurring in the integration of PD and SiOB, and highly stepped patterning, and silicon mirror roughness and how-to-solve will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.236-236
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• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C - SiC thin film grown on Si substrates with thermal oxide layer using APCVD. Pd/poiy 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2\times10^{-3}\;A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about $400^{\circ}C$. According to $H_2$ concentrations, their barrier height($\Phi_{Bn}$) were changed 0.587 eV, 0.579 eV, 0.572 eV and 0.569 eV, respectively. the current was increased. Characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Bulletin of the Korean Chemical Society
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• v.22 no.1
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• pp.30-36
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• 2001

The crystal structures of fully dehydrated $Pd^{2+}$ - and $TI^{+}$ -exchanged zeolite X, $Pd_{18}TI_{56}Si_{100}Al_{92}O_{384}(Pd_{18}TI_{50-}X$, a = $24.935(4)\AA$ and $Pd_{21}TI_{50}Si_{100}Al_{92}O_{384}(Pd_{21}TI_{50-}X$ a = $24.914(4)\AA)$, have been determined by single-crystal X-ray diffraction methods in the cubic space group Fd3 at $21(1)^{\circ}C.$ The crystals were prepared using an exchange solution that had a $Pd(NH_3)_4Cl_2\;:TINO_3$ mole ratio of 50 : 1 and 200 : 1, respectively, with a total concentration of 0.05M for 4 days. After dehydration at $360^{\circ}C$ and 2 ${\times}$$10^{-6}$ Torr in flowing oxygen for 2 days, the crystals were evacuated at $21(1)^{\circ}C$ for 2 hours. They were refined to the final error indices $R_1$ = 0.045 and $R_2$ = 0.038 with 344 reflections for $Pd_{18}Tl_{56-}X$, and $R_1$ = 0.043 and $R_2$ = 0.045 with 280 reflections for $Pd_{21}Tl_{50-}X$; I > $3\sigma(I).$ In the structure of dehydrated $Pd_{18}Tl_{56-}X$, eighteen $Pd^{2+}$ ions and fourteen $TI^{+}$ ions are located at site I'. About twenty-seven $TI^{+}$ ions occupy site II recessed $1.74\AA$ into a supercage from the plane of three oxygens. The remaining fifteen $TI^{+}$ ions are distributed over two non-equivalent III' sites, with occupancies of 11 and 4, respectively. In the structure of $Pd_{21}Tl_{50-}X$, twenty $Pd^{2+}$ and ten $TI^{+}$ ions occupy site I', and one $Pd^{2+}$ ion is at site I. About twenty-three $TI^{+}$ ions occupy site II, and the remaining seventeen $TI^{+}$ ions are distributed over two different III' sites. $Pd^{2+}$ ions show a limit of exchange (ca. 39% and 46%), though their concentration of exchange was much higher than that of $TI^{+}$ ions. $Pd^{2+}$ ions tend to occupy site I', where they fit the double six-ring plane as nearly ideal trigonal planar. $TI^{+}$ ions fill the remaining I' sites, then occupy site II and two different III' sites. The two crystal structures show that approximately two and one-half I' sites per sodalite cage may be occupied by $Pd^{2+}$ ions. The remaining I' sites are occupied by $TI^{+}$ ions with Tl-O bond distance that is shorter than the sum of their ionic radii. The electrostatic repulsion between two large $TI^{+}$ ions and between $TI^{+}$ and $Pd^{2+}$ ions in the same $\beta-cage$ pushes each other to the charged six-ring planes. It causes the Tl-O bond to have some covalent character. However, $TI^{+}$ ions at site II form ionic bonds with three oxygens because the super-cage has the available space to obtain the reliable ionic bonds.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.663-663
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• 2013

We prepared Cu oxides, and Ni and Pd-TiO2@SiO2 core-shellnanostructures, and tested their CO oxidation performances by temperature-programmed mass spectrometry. We found the starting temperatures of CO oxidation are around $200^{\circ}C$ and $300^{\circ}C$ for Ni and Pd-TiO2@SiO2 nanostructures, respectively. Cu oxides are cubes with 50~200 nm with, prepared with different concentrations of NaOH and ascorbic acid. For the core-shell structures, we prepared 100 nm SiO2 spheres, first coated the surface with TiO2 precursor, and then coated with Ni and Pd. Their characteristics are further examined by scanning electron microscopy, optical microscope, FT-IR, and UV-Vis absorption spectroscopy.

• 한국전기화학회:학술대회논문집
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• 2002.10a
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• pp.53-53
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• 2002

• Proceedings of the Korean Magnestics Society Conference
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• 1999.04a
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• pp.100-101
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• 1999

• Korean Journal of Metals and Materials
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• v.46 no.2
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• pp.69-79
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• 2008

A composition consisting of 10 nm-Ni/1 nm-Pd/(30 nm or 70 nm-poly)Si was thermally annealed using rapid thermal for 40 seconds at $300{\sim}1100^{\circ}C$ to improve the thermal stability of conventional nickel monosilicide. The annealed bilayer structure developed into $Ni(Pd)Si_x$, and the resulting changes in sheet resistance, microstructure, phase, chemical composition, and surface roughness were investigated. The silicide, which formed on single crystal silicon, could defer the transformation of $NiSi_2$, and was stable at temperatures up to $1100^{\circ}C$. It remained unchanged on polysilicon substrate compared with the sheet resistance of conventional nickel silicide. The silicides annealed at $700^{\circ}C$, formed on single crystal silicon and 30 nm polysilicon substrates exhibited 30 nm-thick uniform silicide layers. However, silicide annealed at $1,000^{\circ}C$ showed preferred and agglomerated phase. The high resistance was due to the agglomerated and mixed microstructures. Through X-ray diffraction analysis, the silicide formed on single crystal silicon and 30 nm polysilicon substrate, showed NiSi phase on the entire temperature range and mixed phases of NiSi and $NiSi_2$ on 70 nm polysilicon substrate. Through scanning probe microscope (SPM) analysis, we confirmed that the surface roughness increased abruptly until 36 nm on 30 nm polysilicon substrate while not changed on single crystal and 70 nm polysilicon substrates. The Pd-inserted nickel monosilicide could maintain low resistance in a wide temperature range and is considered suitable for nano-thick silicide processing.