• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.439-441
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• 1996

A simple coupling method between APD(avalanche photodiode) arrays and SMF(single mode fiber) arrays on a Silicon carrier composed of V-grooves is proposed and carried out. Jacketed fibers embedded in V-grooves are used as alignment marks instead of patterned pedestals or solder bumps and a optical receiver module are packaged.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.705-711
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• 2000

A thin film oxide semiconductor micro gas sensor array which shows only 60 mW of power consumption at an operating temperature of $300^{\circ}C$ has been fabricated using microfabrication and micromachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double-layer structure of $0.1\mum\; thick\; Si_3N_4 \;and\; 1 \mum$ thick phosphosilicate glass (PSG) prepared by low-pressure chemical-vapor deposition (LPCVD) and atmospheric-pressure chemical-vapor deposition (APCVD), respectively. The sensor array consists of such thin film oxide semiconductor sensing materials as 1 wt.% Pd-doped $SnO_2,\; 6 wt.% A1_2O_3-doped\; ZnO,\; WO_3$/ and ZnO. Baseline resistances of the four sensing materials were found to be stable after the aging for three days at $300^{\circ}C$. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.2
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• pp.315-322
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• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

• Clean Technology
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• v.17 no.3
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• pp.225-230
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• 2011

Characteristics of hydrocarbon selective catalytic reduction of NOx using various noble metal catalysts were investigated. The best active metal is Pt, supports are $CeO_2$ and $TiO_2$ by strong interactions between active metals, and 55% of conversion rate of NOx is shown. Pd, Rh and Ag catalysts presented a conversion of less than 20% as active metals, and supports also showed the poor activity compared to $SiO_2$ and $ZrO_2$. Experiments were performed with different types of reducing agents, amount, concentration of oxygen and space velocity in order to investigate the performance of catalysts according to operating conditions. The results confirm that the methane is better than propane as a reducing agent, and as the ratio of methane/nitrogen oxide increases, the catalytic activity increased, as the concentration of oxygen increases and space velocity decreases, the performance of catalysts increased.

• The Journal of the Korea Contents Association
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• v.16 no.12
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• pp.360-372
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• 2016

South Korea has become richer economically than the past, but still level of happiness is low. This research was conducted to verify the relationships among mental health, self-forgiveness, and psychological well-being. Participants were 232 college students in an university in Seoul. Methods of data analysis were ANOVA, regression analysis, and path analysis. As a result of analyses, first, MMPI-2 clinical scales which showed significant correlation with psychological well-being were as follows: Hs, D, Pd, Pa, Pt, Sc, Si. Second, PSY-5 scales which showed significant correlation with psychological well-being were as follows: PSYC, NEGE, INTR. Third, stepwise regression analysis revealed that Sc, Si and Pd among clinical scales of MMPI-2 were associated with psychological well-being. Fourth, PSYC, NEGE and INTR among clinical scales of PSY-5 scales were associated with psychological well-being. Fifth, self-forgiveness had a significant mediating effect in the relationship between mental health and psychological well-being. Based on the results, implications related to importances of mental health and self-forgiveness were discussed for increasing psychological well-being of college students.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.882-887
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• 2013

We investigated a SiC-based hydrogen gas sensor with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications. The sensor was fabricated by Pd/$Ta_2O_5$/SiC structure, and a thin tantalum oxide ($Ta_2O_5$) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature as well as high permeability for hydrogen gas. In the experiment, dependence of I-V characteristics and capacitance response properties on hydrogen gas concentrations from 0 to 2,000 ppm was analyzed at room temperature to $500^{\circ}C$. As the result, our sensor exploiting a $Ta_2O_5$ dielectric layer showed possibilities with regard to use in hydrogen gas sensors for high-temperature applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.114-114
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• 2000

III-nitride 게 물질들은 blue와 UV 영역의 LED, LD와 같은 광소자뿐만 아니라 HBT, FET와 같은 전자소자로도 널리 응용되고 있다. 이와 같은 물질을 이용한 소자를 제작할 경우 낮은 저항의 ohmic contact은 필수적이다. p-GaN의 ohmic contact은 아직까지 많은 문제점을 내포하고 있다. 그 중의 하나는 높은 doping 농도(>1018cm-3)의 p-GaN 박막을 성장하기가 어렵다는 것이며, 또 하나는 낮은 접촉 비저항을 얻기 위해선 7.5eV 이상의 큰 재가 function을 지닌 금속을 선택해야 한다. 그러나 5.5eV 이상의 재가 function을 갖는 금속은 존재하지 않는다. 위와 같은 문제점들은 p-GaN의 접촉 비저항이 10-2$\Omega$cm2이상의 높은 값을 갖게 만들고 있으며 이에 대한 해결방안으로는 고온의 열처리를 통하여 p-GaN와 금속사이에서 화학적 반응을 일으킴으로써 표면근처에서 캐리어농도를 증가시키고, 캐리어 수송의 형태가 tunneling 형태로 일어날 수 있도록 하는 tunneling current mechaism을 이용하는 것이다. 이에 본 연구에서는 MOCVD로 성장된 p-GaN 박막을 Mg의 activation을 증가시키기 위해 N2 분위기에서 4분간 80$0^{\circ}C$에서 RTA로 annealing을 하였으며, ohmic 접촉을 위한 금속으로 높은 재가 function과 좋은 adhesion 그리고 낮은 자체저항을 가지고 있는 Ni/ZSi/Ni/Au를 ohmic metal로 하여 contact한 후에 $700^{\circ}C$에서 1분간 rapid thermal annealing (RTA) 처리를 했다. contact resistance를 계산하기 위해 circular-TLM method를 이용하여 I-V 특성을 조사하였고, interface interaction을 알아보기 위해 SEM과 EDX, 그리고 XRD로 분석하였다. 또한 추가적으로 Si 계열의 compound metal인 PdSi와 PtSi에 대한 I-V 특성도 조사하여 비교하여 보았다.

• Parasites, Hosts and Diseases
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• v.53 no.4
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• pp.371-377
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• 2015

Trichomonas vaginalis induces proinflammation in cervicovaginal mucosal epithelium. To investigate the signaling pathways in $TNF-{\alpha}$ production in cervical mucosal epithelium after T. vaginalis infection, the phosphorylation of PI3K/AKT and MAPK pathways were evaluated in T. vaginalis-infected SiHa cells in the presence and absence of specific inhibitors. T. vaginalis increased $TNF-{\alpha}$ production in SiHa cells, in a parasite burden-dependent and incubation time-dependent manner. In T. vaginalis-infected SiHa cells, AKT, ERK1/2, p38 MAPK, and JNK were phosphorylated from 1 hr after infection; however, the phosphorylation patterns were different from each other. After pretreatment with inhibitors of the PI3K/AKT and MAPK pathways, $TNF-{\alpha}$ production was significantly decreased compared to the control; however, $TNF-{\alpha}$ reduction patterns were different depending on the type of PI3K/MAPK inhibitors. $TNF-{\alpha}$ production was reduced in a dose-dependent manner by treatment with wortmannin and PD98059, whereas it was increased by SP600125. These data suggested that PI3K/AKT and MAPK signaling pathways are important in regulation of $TNF-{\alpha}$ production in cervical mucosal epithelial SiHa cells. However, activation patterns of each pathway were different from the types of PI3K/MAPK pathways.

• Journal of Oriental Neuropsychiatry
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• v.13 no.2
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• pp.75-92
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• 2002

To evaluate the relations between strokes and psychological characteristics, the authors surveyed Minnesota Multiphasic Personal Inventory(MMPI) in CVA Patients. The results are as follows.1. In the cerebral infarction patients group, the measure of F, Hy, Pd, Pt and Sc has appeared significantly high. 2. In the cerebral hemorrhage patients group, the measure of F and Ma has appeared significantly high. 3. In dysphasia-hemiparesis patients group, the measure of D has appeared high.4. In the Soyangin patients group, the measure of Pd and Ma has appeared high. 5. In the Soeumin patients group, the measure of D, Pt and Si has appeared high.

• Journal of the Korean institute of surface engineering
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• v.27 no.2
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• pp.109-117
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• 1994

Effect of ultrasonic agitation on the contact properties was studied in Ni electroless plating and Pd activation. P-type Si bare wafers were used as substrate and DMAB was used as reducing agent due to its good electrical properties, solderability and compatibility to substrate. In activation, high density Pd nuclei of small size were formed during ultra-sonic agitation compared to that of no stirring. In electroless plating, the plating rate was enhanced by 30∼90% by using ultrasonic agitation. In elecrtoless plating, inhibitor is the most effective additives in ultrasonic agitation. In this experi-ment, thiourea was used as inhibitor. The less the amount of the inhibitor, the more ultrasonic agitation efficiency. It is confirmed by SEM that Ni-B films formed by ultrasonic were coarser, less porous, and denser than those of no stirring. In ultrasonic agitation, boron content of the films was more than those of no stirring. In this case, the more DMAB concentration, the higher the temperature, the less pH, the more boron content. Resistivity of the films formed by ultrasonic agitation was higher than that of no strirring. As the content of boron was increased, the resistivity of the films was increased exponentially.