• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.66.2-66
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• 2000

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.189.2-189
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• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.310-310
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• 2008

본 연구에서는 (1-x) Pb(Zr0.515Ti0.485)$O_3$ - x Pb$(Sb_{1/2}Nb_{1/2})O_3$ + 0.5wt% $MnO_2$ 조성에 Pb$(Sb_{1/2}Nb_{1/2})O_3$ (PSN) (x=0.02, 0.04, 0.06, 0.08) 변화에 따른 미세구조 및 압전, 유전특성에 관해 고찰하였다. PSN 치환량이 증가함에 따라 정방정 (tetragonal)구조에서 삼방정(rhombohedral)구조로 상전이가 일어났으며, 결정립의 크기가 작아지는 것을 확인하였다. 전기기계결합계수 (kp) 는 PSN이 4 mol % 치환됨에 따라 증가하였으며, 더 이상 치환 시 감소하였다. PSN 치환에 따른 전기적 특성은, 결정구조, 결정립의 크기 및 2 차상 등의 미세구조와 긴밀한 관계가 있는 것으로 보여진다. 상경계(Morphotropic Phase Boundary) 영역인 0.96 Pb(Zr0.515Ti0.485)$O_3$ - 0.04 Pb$(Sb_{1/2}Nb_{1/2})O_3$ + 0.5wt% $MnO_2$ 조성에서 $\varepsilon{^T}_{33}/\varepsilon_o$ = 1109, $k_p$= 70.8 (%), $d_{33}$= 325 (pC/N)의 우수한 특성을 나타내었다.

• Bulletin of the Korean Chemical Society
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• v.17 no.4
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• pp.324-330
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• 1996

We examined the formal oxidation states of Pb and Cu in the Pb2CuO4 slab of Pb2Sr2ACu3O8(A=Y1-xCaxor Nd1-xSrx) and their possible changes by oxygen incorporation in the Cu layer of the slab by performing tight-binding band electronic structure calculations on the Pb2CuO4+δ slab. Our results show that the most likely oxidation state of Pb is +2 and that of Cu is +1 for the Pb2CuO4 slab prior to oxidation. With small δ values, the oxygen incorporation occurs by the formation of such chain fragments as in YBa2Cu3O7-y along the a+b axis. The four-coordinate Cu atoms in the chain fragments are in the +3 oxidation states. For values of δ larger than 0.5, however, an additional oxygen (Oad) goes to the site along the b axis to form short Pb-Oad distances oxidizing Pb2+ to Pb4+. This change in the Pb oxidation state leads to the suppression of superconductivity due to the decrease of holes in the CuO2 layer.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.652-659
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• 1996

Sintering characteristics and electrical properties of xPb(Mg$_{1}$8/Te$_{1}$8/Mn$_{1}$4/Nb$_{1}$2/) $O_{3}$-(1-x) Pb (Zr$_{1}$2/ $Ti_{1}$2/) $O_{3}$ (x=0.075, 0.1, 0.125) ceramics are investigated. A sintering temperature of ceramics could be reduced to 950.deg. C by a reaction between PbO and B site compound material. The physical properties of 0.1Pb(Mg, Te, Mn, Nb) $O_{3}$ - 0.9Pb(Zr, Ti) $O_{3}$ bulk ceramic with 3wt% glass frit(0.857PbO-0.143W $O_{3}$) were following : den = 7.95 g/cm$^{3}$, T$_{c}$=340.deg. C, .epsilon.$_{33}$= 754, k$_{31}$=0.3 and Q.=1780. The 3-layer piezoelectric transformer by using a tape casting method showed a good monolithic structure, and its voltage setup ratio was 2.5 times higher than that of a single device by using bulk ceramics.s.s.

• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.523-531
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• 1988

The dielectric and piezoelectric properties with compositions in Pb(Ni1/3Nb2/3)O3-PbTiO3-PbZrO3-(PNN-PT-PZ)solid solution ceramics were investigated. In this study, the compsition ranges were 30 PNN 45mole%, 20 PT 50mole% and 50 PZ5mole%. As PT fraction were increased the grain size was increased and the fired density was decreased, but the changes of PNN fraction had no effect on the grain size. The Curie temperature was increased when PT and PNN fraction were increased. The displacement was increased but had a great hysteresis loss when PT fraction was increased. In morphotropic phase boundary, the maximum piezoelectric and electromechanical coupling factor were indicated. Morphotropic phase boundary(MPB) was 34 PT 36mole% in chang of compositions.

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1204-1211
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• 2000

Mn-Zn 페라이트 소결체와 SiO$_2$-PbO-ZnO 삼성분계 유리와의 계면반응에서 페라이트와 유리에 각각 첨가된 ZnO가 계면반응에 미치는 영향을 조사하였다. SiO$_2$-PbO-ZnO 삼성분계 유리에 첨가된 ZnO 함량이 낮은 경우 페라이트와의 접합계면에서 생성되는 중간상은 Pb$_2$(Mn,Fe)$_2$Si$_2$O$_{9}$와 Pb$_{8}$(Mn,Fe)Si$_{6}$O$_{21}$의 고용체였으며, ZnO 농도가 증가함에 따라 중간상은 사라졌다. 유리속의 ZnO 성분이 증가함에 따라 페라이트 소결체 쪽의 계면부근에 Zn의 농도가 증가하는 특이한 분포가 나타났다. 이는 유리 속에 첨가된 Zn 이온의 높은 활동도로 인해 페라이트에 포함된 Zn 이온의 용해반응이 선택적으로 억제되어 나타난 것으로 생각된다. 페라이트에 첨가된 ZnO 함량이 낮은 경우 SiO$_2$-PbO 이성분계 유리와의 접합계면에서 페라이트의 용해에 따른 침식과 입계를 통한 유리의 침투가 심하게 일어났으며, ZnO 함량이 증가함에 따라 계면을 통한 상호확산과 반응이 억제되었다.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.325-328
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• 1991

In this study, $0.085Ba(La_{1/2}Nb_{1/2})O_3-0.915Pb(Zr_yTi_{1-y})O_3$(y=0.45, 0.50, 0.55, 0.60, 0.65[mol]) transparent electrooptic ceramics were fabricated by two-stage sintering method. Increasing the $PbZrO_3$ contents, dielectric constant was increased and Curie temperature was decreased. In the composition of 0.55[mol] $PbZrO_3$, electromechanical coupling factor was 0.43. From the results of ferroelectric hysteresis loop and transmitted light intensity with electric field, the compositions of 0.65, 0.60, 0.55[mol] $PbZrO_3$ was applicable to electroopticmemory device and the compositions of 0.50, 0.45[mol] $PbZrO_3$ was applicable to linear electrooptic device.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.19-24
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• 1983

Dielectrics used as capacitor was studied in the system of $Pb(MgW)_{0.5} O_3-PbTiO_3-PbZrO_3$ Curie tempera-tures of $PbTiO_3 PbZrO_3$ and $Pb[MgW]_{0.5} O_3$ were 49$0^{\circ}C$ 23$0^{\circ}C$ and 39$0^{\circ}C$ respectively. When these materials formed solid solution the more amount of $Pb(MgW)_{0.5}O_3$ was increased the more Curie temperature lowered and dielectric constant increased. Higher dielectric constants were measured in the solid solution of which X-Ray diffraction patterns were changed. Especially Curie temperature and dielectric constant were 85$^{\circ}C$ and 4159 respectively in the composition of 60 $Pb(MgW)_{0.5}O_3-30 PbTiO_3-10PbZrO_3$. Also in this composition ferroeletric material with thermal stability was obtained.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.115-116
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• 1992