• 제목/요약/키워드: Pb(Zr, Ti)O$_3$ thin

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펄스 레이저 증착법에 의해 제작된 Laser pulse repetition rate의 변화에 따른 $Pb(Zr_{0.48}Ti_{0.52})O_3$ (PZT) 박막의 전기적 특성 (Effect of Laser Pulse Repetition Rate on the Electrical Properties of $Pb(Zr_{0.48}Ti_{0.52})O_3$ (PZT) Thin Films grown by Pulsed Laser Deposition)

  • 이동화;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.11-12
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    • 2005

  • [ $Pb(Zr_{0.48}Ti_{0.52})O_3$ ] (PZT) thin films were deposited on Pt(111)/Ti/$SiO_2$/Si substrates by pulsed laser deposition. In order to study the effect of different laser pulse repetition rate on the dielectric and ferroelectric properties of PZT thin films,2 Hz and 5 Hz of laser pulse repetition rate were selected. We compared the results of XRD pattern, dielectric constant and hysteresis characteristics. From the experimental data, we found that the electrical properties of PZT thin films which grown ar 2 Hz of laser pulse repetition rate were better than those which grown at 5 Hz of laser pulse repetition rate.

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Sol-Gel법에 의한 Pb(Zr,Ti)$O_3$ 박막의 제조 및 유전 특성 (Preparation and Dielectric properties of the Pb(Zr,Ti)$O_3$ Thin Film by Sol-Gel Method)

  • 정장호;박인길;류기원;이성갑;이영희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 C
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    • pp.1022-1024
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    • 1995

  • In this study, $Pb(Zr_xTi_{1-x})O_3$(x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol.%] of $Pb(Zr_xTi_{1-x})O_3$ was made and spin-coated on the Pt/$SiO_2$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at $400[^{\circ}C]$ for 10[min.]. Sintering temperature and time were $500{\sim}800[^{\circ}C]$ and $1{\sim}60$[min.]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin films were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of $700[^{\circ}C]$ for 1 hour. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.

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Sol-Gel 법에 의한$ PbZrO_3$-$PbTiO_3$-$Pb(Ni_{1/3}Nb_{2/3})O_3$ (Electrical properties of sol-gel derived $ PbZrO_3$-$PbTiO_3$-$Pb(Ni_{1/3}Nb_{2/3})O_3$ thin film)

  • 임무열;구경완;한상옥
    • E2M - 전기 전자와 첨단 소재
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    • 제10권2호
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    • pp.134-140
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    • 1997

  • PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.

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