• Electrical & Electronic Materials
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• v.10 no.4
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• pp.349-354
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• 1997

This paper aims at studying the improvement of test method for t-weight sensitive fault (t-wsf) detect. The development of RAM fabrication technology results in not only the increase at device density on chips but also the decrease in line widths in VLSI. But, the chip size that was large and complex is shortened and simplified while the cost of chips remains at the present level, in many cases, even lowering. First of all, The testing patterns for RAM fault detect, which is apt to be complicated , need to be simplified. This new testing method made use of Local Lower Bound (L.L.B) which has the memory with the beginning pattern of 0(l) and the finishing pattern of 0(1). The proposed testing patterns can detect all of RAM faults which contain stuck-at faults, coupling faults. The number of operation is 6N at 1-weight sensitive fault, 9,5N at 2-weight sensitive fault, 7N at 3-weight sensitive fault, and 3N at 4-weight sensitive fault. This test techniques can reduce the number of test pattern in memory cells, saving much more time in test, This testing patterns can detect all static weight sensitive faults and pattern sensitive faults in RAM.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.7
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• pp.1394-1402
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• 1997

In this work, an efficient test algorithm and BIST architeture a for embedded memories are presented. The proposed test algorithm can fully detect stuck-at fault, transition fault, coupling fault. Moreover, the proposed test algorithm can detect nighborhood pattern sensitive fault which could not be detected in previous march test algoarithms. The proposed test algorithm perposed test algorithm performs testing for neghborhood pattern sensitive fault using backgroung data which has been used word-oriented memory testing.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.10
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• pp.1537-1545
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• 1993

In this paper, we design a pattern generator and a fault position detector to implement the proposed fault test algorithms which are Column Weight Sensitive Fault (CWSF) test algorithm and bit line decoder fault test algorithm for performing the Built-In Self Test(BIST) in RAM. A pattern generator consists of an address generator and a data generator. An address generator is divided into a row address generator for effective address and a column address generator for sequential and parallel addresses. A fault position detector is designed to determine whether full occurred or not and to find the position of the fault. We verify the implemented circuits by the simulation.

• Journal of IKEEE
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• v.5 no.1 s.8
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• pp.43-51
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• 2001

As the density of memories increases, unwanted interference between cells and coupling noise between bit-lines are increased. And testing high-density memories for a high degree of fault coverage can require either a relatively large number of test vectors or a significant amount of additional test circuitry. So far, conventional test algorithms have focused on faults between neighborhood cells, not neighborhood bit-lines. In this paper, a new test algorithm for neighborhood bit-line sensitive faults (NBLSFs) based on the NPSFs(Neighborhood Pattern Sensitive Faults) is proposed. And the proposed algorithm does not require any additional circuit. Instead of the conventional five-cell or nine-cell physical neighborhood layouts to test memory cells, a three-cell layout which is minimum size for NBLSFs detection is used. Furthermore, to consider faults by maximum coupling noise by neighborhood bit-lines, we added refresh operation after write operation in the test procedure(i.e.,$write{\rightarrow}\;refresh{\rightarrow}\;read$). Also, we show that the proposed algorithm can detect stuck-at faults, transition faults, coupling faults, conventional pattern sensitive faults, and neighborhood bit-line sensitive faults.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.23-25
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• 1996

In this paper aims at studying the minimal test pattem of the RAM. This also propose a scheme of testing faults from the new fault model using the LLB. The length of test patterns are 6N(1-wsf), 9.5N(2-wsf), 7N(3-wsfl, 3N(4-wsf) operations in N-bit RAM. This test techniques can write into memory cell the number of write operations is reduced and then much testing time is saved. A test set which detects all positive-negative static t-ws faults for t=0, 1, 2, 3, 4 and detects all pattern sensitive fault in memory array. A new fault model, which encompasses the existing fault model Is proposed.

• ETRI Journal
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• v.26 no.6
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• pp.520-534
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• 2004

As the density of memories increases, unwanted interference between cells and the coupling noise between bit-lines become significant, requiring parallel testing. Testing high-density memories for a high degree of fault coverage requires either a relatively large number of test vectors or a significant amount of additional test circuitry. This paper proposes a new tiling method and an efficient built-in self-test (BIST) algorithm for neighborhood pattern-sensitive faults (NPSFs) and new neighborhood bit-line sensitive faults (NBLSFs). Instead of the conventional five-cell and nine-cell physical neighborhood layouts to test memory cells, a four-cell layout is utilized. This four-cell layout needs smaller test vectors, provides easier hardware implementation, and is more appropriate for both NPSFs and NBLSFs detection. A CMOS column decoder and the parallel comparator proposed by P. Mazumder are modified to implement the test procedure. Consequently, these reduce the number of transistors used for a BIST circuit. Also, we present algorithm properties such as the capability to detect stuck-at faults, transition faults, conventional pattern-sensitive faults, and neighborhood bit-line sensitive faults.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.6
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• pp.1038-1045
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• 1994

In this paper, algorithm and built-in test circuit for testing all PSF(Pattern Sensitive Fault) occuring in CAM(Content Addressable Memory) are proposed. That is, built-in test circuit that uses minimum additional circuit without external equipment is designed. Additional circuit consist`s of parallel comparator, error detector, and modified decoder for parallel testing. Besides, the study on eulerian path for effectiv test pattern is carried out simultaneously. Consequently, using proposed algorithm, we can test all contents of CAM with 325+2b(b:number of bits) operations regardless of number of words. The area occupied by test circuit is about 7.5% of total circuit area.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.59-62
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• 2000

As the density of memories increases, unwanted interference between cells and coupling noise between bit-lines are increased and testing high density memories for a high degree of fault coverage can require either a relatively large number of test vectors or a significant amount of additional test circuitry. From now on, conventional test algorithms have focused on faults between neighborhood cells, not neighborhood bit-lines. In this paper, a new algorithm for NPSFs, and neighborhood bit-line sensitive faults (NBLSFs) based on the NPSFs are proposed. Instead of the conventional five-cell and nine-cell physical neighborhood layouts to test memory cells, a three-cell layout which is minimum size for NBLSFs detection is used. To consider faults by maximum coupling noise by neighborhood bit-lines, we added refresh operation after write operation in the test procedure(i.e., write \longrightarrow refresh \longrightarrow read). Also, we present properties of the algorithm, such as its capability to detect stuck-at faults, transition faults, conventional pattern sensitive faults, and neighborhood bit-line sensitive faults.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.7
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• pp.666-676
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• 1992

In this paper, algorithm and testable circuit to find all PSF(Pattern Sensitive Fault ) occured in RAM were proposed. Conventional test circuit and algorithm took much time in testing because consecutive test for RAM cells or f-dimensional memory struciure was not employed. In this paper, methodology for parallel RAM-testing was proposed by compensating additional circuit for test to conventional RAM circuit. Additional circuits are parallel comparator, error detector, group selector circuit and a modified decoder used for parallel testing. And also, the constructive method of Eulerian path to obtain efficient test pattern was performed. Consequently, If algorithm proposed in this paper Is used, the same operations as 32sxwor4 lines will be needed to test b x w=n matrix RAM. Circuit simulation was performerd, and 10 bits x :If words testable RAM was designed.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.935-938
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• 1999

메모리 테스트는 Built-In Self Test(BIST)와 같이 메모리에 내장된 회로를 통하여 자체 점검하는 방법과 테스터를 통하여 생성된 패턴을 주입하는 방법이 있다. 테스트 패턴 생성방법으로는 각각의 고장모델에 대한 테스트 패턴을 deterministic하게 생성해주는 방법과 Pseudo Random Pattern Generator(PRPG)를 이용하여 생성하는 경우로 구분할 수 있다. 본 연구에서는 PRPG를 패턴 생성기로 사용하여 여러 가지 메모리의 결함을 대표한다고 볼 수 있는 Static 및 Dynamic Neighborhood Pattern Sensitive Fault(NPSF) 등 다양한 종류의 고장을 점검할 수 있도록 메모리 BIST를 구성하였다. 기존의 Linear Feedback Shift Register(LFSR)보다 본 연구에서 제안하는 Linear Hybrid Cellular Automata(LHCA)를 이용한 PRPG가 높고 안정된 고장 점검도를 나타내었다.