• Electrical & Electronic Materials
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• v.10 no.4
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• pp.349-354
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• 1997

This paper aims at studying the improvement of test method for t-weight sensitive fault (t-wsf) detect. The development of RAM fabrication technology results in not only the increase at device density on chips but also the decrease in line widths in VLSI. But, the chip size that was large and complex is shortened and simplified while the cost of chips remains at the present level, in many cases, even lowering. First of all, The testing patterns for RAM fault detect, which is apt to be complicated , need to be simplified. This new testing method made use of Local Lower Bound (L.L.B) which has the memory with the beginning pattern of 0(l) and the finishing pattern of 0(1). The proposed testing patterns can detect all of RAM faults which contain stuck-at faults, coupling faults. The number of operation is 6N at 1-weight sensitive fault, 9,5N at 2-weight sensitive fault, 7N at 3-weight sensitive fault, and 3N at 4-weight sensitive fault. This test techniques can reduce the number of test pattern in memory cells, saving much more time in test, This testing patterns can detect all static weight sensitive faults and pattern sensitive faults in RAM.

• ETRI Journal
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• v.26 no.6
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• pp.520-534
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• 2004

As the density of memories increases, unwanted interference between cells and the coupling noise between bit-lines become significant, requiring parallel testing. Testing high-density memories for a high degree of fault coverage requires either a relatively large number of test vectors or a significant amount of additional test circuitry. This paper proposes a new tiling method and an efficient built-in self-test (BIST) algorithm for neighborhood pattern-sensitive faults (NPSFs) and new neighborhood bit-line sensitive faults (NBLSFs). Instead of the conventional five-cell and nine-cell physical neighborhood layouts to test memory cells, a four-cell layout is utilized. This four-cell layout needs smaller test vectors, provides easier hardware implementation, and is more appropriate for both NPSFs and NBLSFs detection. A CMOS column decoder and the parallel comparator proposed by P. Mazumder are modified to implement the test procedure. Consequently, these reduce the number of transistors used for a BIST circuit. Also, we present algorithm properties such as the capability to detect stuck-at faults, transition faults, conventional pattern-sensitive faults, and neighborhood bit-line sensitive faults.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.59-62
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• 2000

As the density of memories increases, unwanted interference between cells and coupling noise between bit-lines are increased and testing high density memories for a high degree of fault coverage can require either a relatively large number of test vectors or a significant amount of additional test circuitry. From now on, conventional test algorithms have focused on faults between neighborhood cells, not neighborhood bit-lines. In this paper, a new algorithm for NPSFs, and neighborhood bit-line sensitive faults (NBLSFs) based on the NPSFs are proposed. Instead of the conventional five-cell and nine-cell physical neighborhood layouts to test memory cells, a three-cell layout which is minimum size for NBLSFs detection is used. To consider faults by maximum coupling noise by neighborhood bit-lines, we added refresh operation after write operation in the test procedure(i.e., write \longrightarrow refresh \longrightarrow read). Also, we present properties of the algorithm, such as its capability to detect stuck-at faults, transition faults, conventional pattern sensitive faults, and neighborhood bit-line sensitive faults.

• Journal of Power Electronics
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• v.16 no.3
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• pp.1087-1096
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• 2016

This paper reports an investigation conducted on two diagnostic methods based on the switching voltage pattern of IGBT open-circuit faults in voltage-source inverters (VSIs). One method was based on the bridge arm pole voltage, and the other was based on bridge arm line voltage. With an additional simple circuit, these two diagnostic methods detected and effectively identified single and multiple open-circuit faults of inverter IGBTs. A comparison of the times for the diagnosis and anti-interference features between these two methods is presented. The diagnostic time of both methods was less than 280ns in the best case. The diagnostic time for the method based on the bridge arm pole voltage was less than that of the method based on the bridge arm line voltage and was 1/2 of the fundamental period in the worst case. An experimental study was carried out to show the effectiveness of and the differences between these two methods.

• Journal of IKEEE
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• v.5 no.1 s.8
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• pp.43-51
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• 2001

As the density of memories increases, unwanted interference between cells and coupling noise between bit-lines are increased. And testing high-density memories for a high degree of fault coverage can require either a relatively large number of test vectors or a significant amount of additional test circuitry. So far, conventional test algorithms have focused on faults between neighborhood cells, not neighborhood bit-lines. In this paper, a new test algorithm for neighborhood bit-line sensitive faults (NBLSFs) based on the NPSFs(Neighborhood Pattern Sensitive Faults) is proposed. And the proposed algorithm does not require any additional circuit. Instead of the conventional five-cell or nine-cell physical neighborhood layouts to test memory cells, a three-cell layout which is minimum size for NBLSFs detection is used. Furthermore, to consider faults by maximum coupling noise by neighborhood bit-lines, we added refresh operation after write operation in the test procedure(i.e.,$write{\rightarrow}\;refresh{\rightarrow}\;read$). Also, we show that the proposed algorithm can detect stuck-at faults, transition faults, coupling faults, conventional pattern sensitive faults, and neighborhood bit-line sensitive faults.