• 한국전산유체공학회:학술대회논문집
• /
• 2008.03a
• /
• pp.340-346
• /
• 2008

A level-set method is developed for computation of drop motions in various engineering applications. Compared with the volume-of-fluid method based on a non-smooth volume-fraction function, the LS method can calculate an interface curvature more accurately by using a smooth distance function. Also, it is straightforward to implement for two-phase flows in complex geometries unlike the VOF method requiring much more complicated geometric calculations. The LS method is applied to simulation of inkjet process, thin film pattering and droplet collisions.

• 한국전산유체공학회:학술대회논문집
• /
• 2008.10a
• /
• pp.340-346
• /
• 2008

A level-set method is developed for computation of drop motions in various engineering applications. Compared with the volume-of-fluid method based on a non-smooth volume-fraction function, the LS method can calculate an interface curvature more accurately by using a smooth distance function. Also, it is straightforward to implement for two-phase flows in complex geometries unlike the VOF method requiring much more complicated geometric calculations. The LS method is applied to simulation of inkjet process, thin film pattering and droplet collisions.

• Polymer Science and Technology
• /
• v.21 no.2
• /
• pp.175-180
• /
• 2010

• Macromolecular Research
• /
• v.14 no.1
• /
• pp.114-116
• /
• 2006

• Laser Solutions
• /
• v.13 no.1
• /
• pp.11-15
• /
• 2010

Indium tin oxide (ITO) provides high electrical conductivity and transparency in the visible and near IR (infrared) wavelengths. Thus, it is widely used as a transparent electrode for the fabrication of liquid crystal displays (LCDs) and organic light emitting diode displays (OLRDs), photovoltaic devices, and other optical applications. Lasers have been used for removing coating on polymer substrate for flexible display and electronic industry. In selective removal of ITO layer, laser wavelength, pulse energy, scan speed, and the repetition rate of pulses determine conditions, which are efficient for removal of ITO coating without affecting properties of the polymer substrate. ITO coating removal with a laser is more environmentally friendly than other conventional etching methods. In this paper, pattering of ITO film from polymer substrates is described. The Yb:KGW femtosecond laser processing system with a pulse duration of 250fs, a wavelength of 1030nm and a repetition rate of 100kHz was used for removing ITO coating in air. We can remove the ITO coating using a scanner system with various pulse energies and scan speeds. We observed that the amount of debris is minimal through an optical and a confocal microscope, and femtosecond laser pulses with 1030nm wavelength are effective to remove ITO coating without the polymer substrate ablation.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2012.10a
• /
• pp.273-274
• /
• 2012

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.1
• /
• pp.1-11
• /
• 2004

A FinFET, a novel double-gate device structure is capable of scaling well into the nanoelectronics regime. High-performance CMOS FinFETs , fully depleted silicon-on-insulator (FDSOI) devices have been demonstrated down to 15 nm gate length and are relatively simple to fabricate, which can be scaled to gate length below 10 nm. In this paper, some of the key elements of these technologies are described including sub-lithographic pattering technology, raised source/drain for low series resistance, gate work-function engineering for threshold voltage adjustment as well as metal gate technology, channel roughness on carrier mobility, crystal orientation effect, reliability issues, process variation effects, and device scaling limit.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2011.06a
• /
• pp.119-120
• /
• 2011

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.316.1-316.1
• /
• 2016

지구 온난화로 인한 기후변화 현상이 점차 가시화 되고 있는 가운데 탄산가스를 비롯한 온실가스의 배출을 저감하기 위한 연구개발 노력과 관심이 고조되고 있다. 지구 대기층이 가지는 이러한 온실효과는 산업화 경향이 두드러지면서 화석에너지의 사용 증대 등 인위적 요인들에 의해 많이 증가하게 되었다. 온실가스 중에서 산화이질소(N2O)는 이산화탄소(CO2)와 메탄(CH4) 다음으로 많이 배출되는 성분이며 지구온난화 효과는 이산화탄소 분자의 310배에 달한다. 본 연구에서는 반도체 미세 패터닝(Pattering)에 게이트 산화막의 두께가 점차 얇아짐에 따라 발생하는 문제점을 해결하고 특성을 향상시키기 위해 사용되는 질화산화막(SiON)을 증착 시, 기존 산화이질소(N2O) 대신 산화질소(NO)를 사용하여 대체 가능 여부를 평가하고자 하였다. 본 연구에서는 산화질소(NO) 사용량의 변화를 통하여 FT-IR 및 Refractive Index 측정하면서 기존 산화이질소(N2O)를 이용하여 구현된 질화산화막 막질과 결과를 비교하였고, 질화산화막 증착율 및 파티클 발생 수준을 비교하였다.

• Proceedings of the KSME Conference
• /
• 2004.11a
• /
• pp.777-781
• /
• 2004

This paper presents a force/displacement sensing system to measure penetration depths and machining forces during pattering operation. This sensing system consists of a leaf spring mechanism and a capacitive sensor, which is mounted on a PZT driven in-feed motion stage with 1nm resolution. The sample is moved by a xy scanning motion stage with 5nm resolution. The constructed system was applied to nano indentation experiments, and the load-displacement curves of silicon(111) and aluminum were obtained. Then, the indentation samples were measured by AFM. Experimental results demonstrated that the developed system has the ability of preforming force/depth sensing indentations