• Journal of Convergence for Information Technology
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• v.7 no.5
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• pp.95-102
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• 2017

Modular toys for creative education require functional blocks to create various types of movements. An active drive module and a lot of passive connection blocks are needed to express motion with combination. In this paper, we propose the design of modular toys to produce various creative movements and controller structure working with them. In order to facilitate the connection between the designed modules, a connection method and a suitable mechanism are suggested. We also dealt with the design of various types of sensor modules that can work in conjunction with modular toys. Using these toys, typical standard application form that can be imitated educationally is suggested and showed the usefulness of the modular toy by actually applying it with designed modules and components. The proposed method is applied to actual educational toys, and the operation is effectively performed by recording operation and playing repetitive operation.

• The Journal of Advanced Prosthodontics
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• v.5 no.3
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• pp.312-318
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• 2013

PURPOSE. The aim of this study was to compare the passivity of implant superstructures by assessing the strain development around the internal tapered connection implants with strain gauges. MATERIALS AND METHODS. A polyurethane resin block in which two implants were embedded served as a measurement model. Two groups of implant restorations utilized cement-retained design and internal surface of the first group was adjusted until premature contact between the restoration and the abutment completely disappeared. In the second group, only nodules detectable to the naked eye were removed. The third group employed screw-retained design and specimens were generated by computer-aided design/computer-aided manufacturing system (n=10). Four strain gauges were fixed on the measurement model mesially and distally to the implants. The strains developed in each strain gauge were recorded during fixation of specimens. To compare the difference among groups, repeated measures 2-factor analysis was performed at a level of significance of ${\alpha}$=.05. RESULTS. The absolute strain values were measured to analyze the magnitude of strain. The mean absolute strain value ranged from 29.53 to 412.94 ${\mu}m/m$ at the different strain gauge locations. According to the result of overall comparison, the cement-retained prosthesis groups exhibited significant difference. No significant difference was detected between milled screw-retained prostheses group and cement-retained prosthesis groups. CONCLUSION. Within the limitations of the study, it was concluded that the cement-retained designs do not always exhibit lower levels of stress than screw-retained designs. The internal adjustment of a cement-retained implant restoration is essential to achieve passive fit.

• Journal of Advanced Information Technology and Convergence
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• v.10 no.1
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• pp.37-43
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• 2020

This paper presents analysis of passive metal interconnection of the LNA block in CMOS integrated circuit. The performance of circuit is affected by the geometry of RF signal path. To investigate the effect of interconnection lines, a cascode LNA is designed, and circuit simulations with full-wave electromagnetic (EM) simulations are executed for different positions of a component. As the results, the position of an external capacitor (C_ex) changes the parasitic capacitance of electric coupling; the placement of component affects the circuit performance. This analysis of interconnection line is helpful to analyze the amount of electromagnetic coupling between the lines, and useful to choose the signal path in the layout design. The target of this work is the RF LNA enabling the seamless connection of wireless data network and the following standards have to be supported in multi-band (WCDMA: 2.11~ 2.17 GHz, CDMA200 1x : 1.84~1.87 GHz, WiBro : 2.3~2.4GHz) mobile application. This work has been simulated and verified by Cadence spectre RF tool and Ansoft HFSS. And also, this work has been implemented in a 0.13um RF CMOS technology process.