• 제목/요약/키워드: Passive Film

검색결과 325건 처리시간 0.027초

$H_2SO_4$ 수용액 변화에 따른 철 알루미나이드 합금의 부식특성 (Corrosion characterization of Fe-aluminide alloys with various sulphuric acid solution)

  • 이병우;최희락
    • 동력기계공학회지
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    • 제10권2호
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    • pp.83-88
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    • 2006
  • Corrosion characterization of Fe-XAl-0.3Y(X=5, 10, 14 wt%) alloys in $0.1{\sim}1N$ sulphuric acid at room temperature was studied using potentiodynamic techniques. The morphology and components of corrosion products on surface of Fe-aluminide alloys were investigated using SEM/EDX, XRD. The potentiodynamic polarization curve of alloys exhibited typical active, passive, transpassive behaviour. Corrosion potential($E_{corr}$) and corrosion current density($I_{corr}$) values of Fe-XAl-0.3Y alloys followed linear rate law. $E_{corr}$ of 10Al alloy and 14Al alloy was ten times lower than 5Al alloy. Icorr of 14Al alloy was five times lower than 5Al alloy. The passive film on the surface of Fe-5Al-0.3Y alloy was formed iron oxide. Fe-10Al-0.3Y and Fe-14Al-0.3Y alloys passive films were aluminium oxide. especially, Fe-14Al-0.3Y alloy showed good corrosion resistance in $0.1{\sim}1N$ sulphuric acid. This is attributed to the forming of protective $Al_2O_3$ oxide on the surface of Fe-14Al-0.3Y alloy.

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Thin-film passivation of the polymer EL device using parylene and its application to the passive matrix PELD system

  • Lee, Cheon-An;Jin, Sung-Hun;Jung, Keum-Dong;Lee, Jong-Duk;Park, Byung-Gook
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.669-672
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    • 2004
  • The thin-film passivation technology using the poly-para-xylylene (parylene) was applied to polymer electroluminescent devices. The fabricated device shows a good luminescent characteristic of maximum 11640 cd/$m^2$. The measured lifetime was reached up to 28 hours, which means the effectiveness of the passivation. Applying the parylene thin-film passivation technique, 10${\times}$10 passive matrix display system was implemented and obtained some still images.

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금도금을 위한 AISI 304 스테인레스강 표면의 세정 (A Study on the Cleaning of AISI 304 Stainless Steel Surface for Gold Plating)

  • 한범석;장현구
    • 한국표면공학회지
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    • 제28권1호
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    • pp.23-33
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    • 1995
  • AISI 304 stainless steel has high resistance to corrosion due to the presence of a self-healing chromium oxide film on the surface, which also accounts for the difficulty in plating. Surface cleaning of this alloy is of fundamental importance in gold plating since its effectiveness puts an upper limit on the quality of the final coating. The cleaning of AISI 304 stainless steel was investigated with elimination of artificial passive oxide film and degreasing of remaining buffing wax as stearic acid. The familiar cleaning methods i.e. ultrasonic cleaning, electro-cleaning and activation treatment were fabricated in this study. Activation treatment showed best cleaning efficiency for elimination of passive oxide film among these methods, which was also confirmed by AES (Auger electron spectrometer) analysis. However, the best condition of cleaning was obtained by combining these methods. Electrocleaning time, for degreasing the stearic acid layer, was decreased with increasing amount of added KCN.

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고주파 적용을 위한 금속/$ZrTiO_4$/금속 캐피시터 특성 (properties of Metal/$ZrTiO_4$/Metal Capacitors for Microwave Applications)

  • 박창순;선호정
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.197-197
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    • 2008
  • There are fast growing demands for new dielectric materials for passive capacitors of RF-ICs and other wireless applications. One of the bulk microwave dielectric materials which have superior properties is $ZrTiO_4$ due to its large dielectric constant and high quality factor. Therefore, $ZrTiO_4$ is worth studying as a form of thin film to be applied for passive capacitors of integrated circuits. In this study, we fabricated metal-insulator-metal type capacitors with $ZrTiO_4$ dielectric thin film, and evaluated their capacitor properties.

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스테인레스 강판의 응력부식균열 전파기구에 관한 연구 (A study on the mechanism of stress corrosion cracking of stainless steel)

  • 임우조;김영식
    • Journal of Advanced Marine Engineering and Technology
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    • 제9권2호
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    • pp.153-158
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    • 1985
  • The dependence of the corrosion potential on the stress corrosion cracking of 304 austenitic stainless steel was inspected by using the specimen of constant displacement type under the environment of 42% $MgCl_2$ boiled solution. The relationship of the corrosion potential to the intermittent propagation behaviour in stress corrosion cracking was cleared. As the results, a possible model of stress corrosion cracking of 304 austenitic stainless steel in $MgCl_2$ boiled solution was presented on the basis of the Film Rupture Model. This model is specified by the following process. Rupturing of passive film at notch tip .rarw. Dissolution of metal ion and formation of tunnel .rarw. Initiation of microcrack .rarw. Propagation of main crack .rarw. Recreation of passive film at new crack surface.

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유기 TFT로 구동한 유기 인광발광소자의 연구 (Organic Electrophosphorescent Device driven by Organic Thin-Film Transistor)

  • 김윤명;표상우;김준호;심재훈;정태형;김영관;김정수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.312-315
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    • 2001
  • Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT. polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

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유기 TFT로 구동한 유기 인광발광소자의 연구 (Organic Electrophosphorescent Device driven by Organic Thin-Film Transistor)

  • 김윤명;표상우;김준호;심재훈;정태형;김영관;김정수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.312-315
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    • 2001
  • Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT, Polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

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신선편이가공 양송이의 포장방법에 따른 품질변화 (Effects of Packaging Treatment on Quality of Fresh-cut Mushrooms (Agaricus bisporus Sing.) during Storage)

  • 임정호;최정희;홍석인;정문철;김동만
    • 한국식품저장유통학회지
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    • 제13권1호
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    • pp.1-7
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    • 2006
  • 절단 양송이를 polyethylene film (PE), polypropylene film (PP), anti-fogging film (AF), perforated film (PF)을 사용한 일반 MA포장과, Nylon/PP film을 이용한 가스치환포장 (MA1, MA2) 및 진공(VF)포장 한 후 $5^{\circ}C$에 저장하면서 중량, 표면색, 페놀화합물, 비타민 C 및 관능적 품질 변화를 조사하였다. 저장 중 양송이의 호흡률은 절단 한 것이 절단하지 않은 것에 비하여 1.27배 높았다. 일반 MA포장내 산소가스농도는 밀봉 3일 이후 $1\~2\%$ 내외로 안정되었고, 탄산가스농도는 포장구에 따라서 $5\~15\%$ 내외로 유지되었다. 중량과 갈변도의 변화는 PP포장구에서 적었고, 경도는 PF포장구에서 가장 많이 변하였다. 유리 및 결합형 페놀화합물은 저장중 조금씩 감소하는 경향을 나타내었으며, PE포장구에서 변화가 가장 적었다. 비타민 C함량의 경우 PF포장구에서 가장 낮은 변화를 나타내었다. 관능적 품질 평가결과 저장 10일까지 MA2 포장구가 표면색 및 경도 측면에서 가장 우수하였으며, 그 다음으로 MA1, PE포장구 및 PP포장구였다. 본 연구결과, 전반적으로 MA2포장방법이 색, 경도, 비타민 C함량 및 관능적인 면에 있어 절단 양송이 저장방법으로 가장 우수한 양상을 나타내었다

Effect of Niobium on the Electronic Properties of Passive Films on Zirconium Alloys

  • Kim, Bo Young;Kwon, Hyuk Sang
    • Corrosion Science and Technology
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    • 제2권2호
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    • pp.68-74
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    • 2003
  • The effects of Niobium on the structure and properties(especially electric properties) of passive film of Zirconium alloys in pH 8.5 buffer solution are examined by the photo-electrochemical analysis. For Zr-xNb alloys (x = 0, 0.45, 1.5, 2.5 wt%), photocurrent began to increase at the incident energy of 3.5 ~ 3.7 eV and exhibited the $1^{st}$ peak at 4.3 eV and the $2^{nd}$ peak at 5.7 eV. From $(i_{ph}hv)^{1/2}$ vs. hv plot, indirect band gap energies $E_g{^1}$= 3.01~3.47 eV, $E_g{^2}$= 4.44~4.91 eV were obtained. With increasing Nb content, the relative photocurrent intensity of $1^{st}$ peak significantly increased. Compared with photocurrent spectrum of thermal oxide of Zr-2.5Nb, It was revealed that $1^{st}$ peak in photocurrent spectrum for the passive film formed on Zr-Nb alloy was generated by two types of electron transitions; the one caused by hydrous $ZrO_2$ and the other created by Nb. Two electron transition sources were overlapped over the same range of incident photon energy. In the photocurrent spectrum for passive film formed on Zr-2.5Nb alloy in which Nb is dissolved into matrix by quenching, the relative photocurrent intensity of $1^{st}$ peak increased, which implies that dissolved Nb act as another electron transition source.