• JSTS:Journal of Semiconductor Technology and Science
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• 제3권3호
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• pp.145-152
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• 2003

Electrical gate and drain characteristics of double heterostructure InAlAs/InGaAs pseudomorphic HEMTs have been investigated under sub-bandgap photonic excitation ($hv). Drain $(V_{DS})-,{\;}gate($V_{DS})-$, and optical power($P_{opt}$)-dependent variation of the abnormal gate leakage current and associated physical mechanisms in the PHEMTs have been characterized. Peak gate voltage ($V_{GS,P}$) and the onset voltage for the impact ionization ($V_{GS.II}$) have been extracted and empirical model for their dependence on the $V_{DS}$ and $P_{opt} have been proposed. Anomalous gate and drain current, both under dark and under sub-bandgap photonic excitation, have been modeled as a parallel connection of high performance PHEMT with a poor satellite FET as a parasitic channel. Sub-bandgap photonic characterization, as a function of the optical power with $h\nu=0.799eV$, has been comparatively combined with those under dark condition for characterizing the bell-shaped negative humps in the gate current and subthreshold drain leakage under a large drain bias.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 B
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• pp.1117-1119
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• 2002

In this paper, we have developed a ZVS half-bridge converter with a clamping circuit for the DC power source of PDP circuit. The clamping circuit in the developed converter reduces the oscillating current of the switch by resonant inductor and parasitic parameters in output rectifier diodes. Finally, comparing the experimental results of the developed converter to the conventional ZVS half-bridge converter, it is clarified that the developed converter is more efficient and lower noise than the conventional one.