• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.2
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• pp.152-158
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• 1999

Due to high power ratings and low conduction loss, the TGBT has become more attractive in switching power supplies. However, its lower turn-on and turn-off characteristics than those of MOSFET cause severe switching loss and s switching frequency limitation. This paper proposes 2.4kW. 48V. high efficiency half-bridge DC-DC converter using p paralleled TGBT-MOSFET switch concept to use the merits of TGBTs and MOSFETs. Tn parallel switches. each of I TGBT and MOSFET plays its part during on-periods and switching instants. The switching loss is analyzed by l linearized modelling and the operation of the converter are investigated by simulation results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.359-359
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• 2010

IGBT(Insulated Gate Bipolar Transistor) 란 MOS(Metal Oxide Silicon) 와 Bipolar 기술의 결정체로 낮은 순방향 손실(Low Saturation)과 빠른 Speed를 특징으로 기존의 Thyristor, BJT, MOSFET 등으로 실현 불가능한 분양의 응용처를 대상으로 적용이 확대 되고 있고, 300V 이상의 High Power Application 영역에서 널리 사용되고 있는 고효율, 고속의 전력 시스템에 있어서 필수적으로 이용되는 Power Device이다. IGBT는 출력 특성 면에서 Bipolar Transistor 이상의 전류 능력을 가지고 있고 입력 특성 면에서 MOSFET과 같이 Gate 구동 특성을 갖기 때문에 High Switching, High Power에 적용이 가능한 소자이다. 반면에, Conventional IGBT는 MOSFET과 달리 IGBT 내부에 Anti-Parallel Diode가 없기 때문에 Inductive Load Application 적용시에는 별도의 Free Wheeling Diode가 필요하다. 그래서, 본 논문에서 별도의 Anti-Parallel Diode의 추가 없이도 Inductive Load Application에 적용 가능한 RC IGBT를 적용하여 600V/15A급 Three Phase Inverter Module을 제안 하고자 한다.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.460-465
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• 1998

Due to high power ratings and low conduction loss, the IGBT has become more attractive in switching power supplies. However, its turn-on and turn-off characteristics cause severe switching loss and switching frequency limitation. This paper proposes 2.4kW, 48V, high efficiency half-bridge DC-DC converter using paralleled IGBT-MOSFET switch concept, where each of IGBT and MOSFET plays its part during on-periods and switching instants. The switching loss is analyzed by using the linearized model and the opteration of the converter are investigated by simulation results.

• Proceedings of the KIPE Conference
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• 2002.07a
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• pp.759-762
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• 2002

A ZCT(Zero Current Transition) PWM(Pulse-Width-Modulation) boost converter using parallel MOSFET switch is proposed in this paper. The IGBT(main switch) of the proposed converter is always turned on with zero current switching and turned off with zero current/zero voltage switching. The MOSFET(auxiliary switch) is also operates with soft switching condition. In addtion to, the proposed converter eliminates the reverse recovery current of the freewheeling diode by adding the resonant inductor, Lr, in series with the main switch. Therefore, the turn on/turn off switching losses of switches are minimized and the conduction losses by using IGBT switch are reduced. In addition to, using parallel MOSFET switch overcomes the switching frequency limitation occurred by current tail. As mentioned above, the characteristics are verified through experimental results.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.713-718
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• 1998

Due to high power ratings and low conduction loss, the IGBT has become more attractive in high power applications. However, its slower characteristics than those of MOSFET cause severe switching losses and switching frequency limitation. This paper proposes the IGBT's soft switching concept with the help of MOSFET, where each of the IGBT and MOSFET plays its role during on-periods and switching instants. Also, the switching losses are analyzed by using the linearized modeling and the modeling and the operations of a converter are investigated to confirm the soft switching of IGBT's.

• Proceedings of the KIPE Conference
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• 2001.07a
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• pp.520-524
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• 2001

Recently, the demand of large capacity SMPS for industrial area is increasing. Full-bridge dc-dc converter with IGBT is most widely used for large capacity SMPS because IGBT has a low-conduction loss and large current capacity, But most large capacity Full-bridge do-dc converter using IGBT has low operating frequency because of switching loss at IGBT especially at turn-off by current tail and it's cause of relatively big converter size. MOSFET has low switching losses has been widely used for high frequency SMPS but it has a problem to apply to large capacity SMPS because it has large conduction resistance causing large on-time losses. In this paper, for reduction losses at switching device, MOSFET is applied at parallel with IGBT in full-bridge dc/dc converter.

• Journal of Power Electronics
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• v.15 no.6
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• pp.1533-1546
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• 2015

This study presents a novel method for reducing the switching losses of an asymmetric half-bridge converter for a three-phase, 12/8 switched reluctance motor operated in low speed. In particular, this study aims to reduce the switching-off losses of chopping switches in the converter when operated in the current regulated mode (chopping mode). The proposed method uses the mixed parallel operation of IGBT (chopping switch) and MOSFET (auxiliary switch). MOSFET is precisely controlled to momentarily conduct prior to the turn-off interval of the IGBT. Consequently, the voltage across the switches is clamped to approximately zero, substantially decreasing the turn-off switching losses. The analytical expressions of power losses are extensively elaborated. Compared with the conventional asymmetric half-bridge converter, the modified converter can effectively minimize the switching losses. Therefore, the efficiency of the converter is eventually improved. Computer simulation and experimental results confirm the effectiveness of the proposed technique.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.777-780
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• 1993

An insulated gate bipolar transistor(IGBT) is a MOS gate turn on/off bipolar transistor which combines the attributes of the MOSFET and bipolar transistor. Because of its limitation of power capability compared to thyristor or GTO, some parallel connection of IGBT has been studied to improve the limitation of current capabillity. In this paper, the switching effects from the unbalance of internal parameters of IGBT and the turn-off snubber characteristics are investigated using SPICE program.

• Journal of IKEEE
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• v.24 no.1
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• pp.208-215
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• 2020

In this study, the output 380V direct current DC-DC converter for low-voltage direct current(LVDC) distribution was designed in three types, and the voltage and current characteristics of the three types of DC-DC converter were compared and analyzed through simulation. When the converter was configured using a parallel structure with the power metal-oxide semiconductor field-effect transistor and two current suppression insulated-gate bipolar transistors(IGBTs), the time when the output voltage was stabilized at DC 380V was relatively short with 9ms and the range of output current changes was also between 44.8A and 50.2A, indicating that the width of change was much smaller and the effect of current suppression was greater compared to when IGBT was not applied(68~83A). These results suggest that the proposed DC-DC converter for LVDC distribution is likely to be applied to smart grid construction.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.8
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• pp.455-460
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• 1999

A novel zero-voltage-transition (ZVT) PWM converter for switched reluctance motor (SRM) drives is proposed. A simple auxiliary circuit which consists of one active switch, one resonant inductor, and three diodes provides ZVS condition to all main switches and diodes allowing high frequency operation of the converter with high efficiency. The auxiliary circuit is placed in parallel with the main power flow path and thus it handles only a small fraction of the main power. So, the power rating of the auxiliary circuit can be very small (about 30% of main power). So, the auxiliary circuit can be realized with small power rating and low cost. Operation, features and characteristics of the proposed converter are illustrated and verified on a 1.5 kW, 50 kHz IGBT based (a MOSFET for the auxiliary with) experimental circuit.