• 제목/요약/키워드: Pad structure

검색결과 225건 처리시간 0.023초

지진시에 교량의 탄성 받침을 표현하는 범용 연결 유한 요소 모델의 유도식 (Derivation of General Link Finite Element Equation representing Pad Shoe in Bridge under Earthquake)

  • 정대열
    • 한국전산구조공학회:학술대회논문집
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    • 한국전산구조공학회 1999년도 봄 학술발표회 논문집
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    • pp.226-233
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    • 1999
  • When we numerically model the bridge under seismic condition, the full model combining the super-structure and the sub-structure is considered for the more accurate results than the separate model. In this case, the super-structure is connected with the sub-structure by the elastic pad shoe that is difficult to model, because it has the three translational elastic stiffness and the three rotational elastic stiffness. The two-node General Link element is derived in finite element equation representing such a pad shoe, and it is verified by comparing the one General Link element model with the corresponding three legacy spring element model. It is easy to model the pad shoe, if the General Link finite element is used. And the seismic analysis result of the bridge full model structure, which is modeled with the General Link element, has been compared with the one of the separate model structure. The present study gives. more conservative result than that of the separate model, which does not consider the dynamic behaviour of the sub-structure.

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접촉 면적을 제어할 수 있는 CMP 패드 제작 방법 및 성능 평가에 관한 연구 (A study on manufacture and evaluation of CMP pad controllable contact area)

  • 최재영;김형재;정영석;박재홍;키노시타마사하루;정해도
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.247-251
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    • 2004
  • Chemical-Mechanical Polishing(CMP) especially is becoming one of the most important ULSI processes for the 0.25m generation and beyond. And there are many elements affecting CMP performance such as slurry, pad, process parameters and pad conditioning. Among these elements the CMP pad is considered one of the most important because of its change. But the surface of the pad has irregular pores, so there is non-uniformity of slurry flow and of contact area between wafer and the pad, and glazing occurs on the surface of the pad. So we make CMP pad with micro structure using micro molding method. This paper introduces the basic concept and fabrication technique of CMP pad with micro-structure and the characteristic of polishing. Experimental results demonstrate the removal rate, uniformity, and time vs. removal rate.

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면니트의 CPB 염색에서 염료 구조에 따른 흡진 거동 분석 (Analysis of the Dye Absorption Behavior in Accordance with the Dye Structure in the Cold Pad Batch Dyeing of Cotton Knit)

  • 홍석일;남창우;이우성
    • 한국염색가공학회지
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    • 제28권3호
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    • pp.175-182
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    • 2016
  • To investigate dyeing behaviors in accordance with dye structure in cold pad batch dyeing of cotton knit, monochlorotriazine-vinylsulfone bifunctional dyes and monofluorotriazine-vinylsulfone bifunctional dyes were prepared. The spectral property and solubility of the dyes were tested and compared with the imported dyes. In addition, exhaustion behaviors of individual and mixed dye solutions were measured to examine the influence of dye structure on dyeing behavior in cold pad batch dyeing. The substantivity, fixation, migration index and half dyeing time were also calculated for further analysis of dyeing behavior of the prepared dyes. As a result, both dyes exhibited the superior solubilities and satisfactory light absorption properties. Also, monofluorotriazine-vinylsulfone bifunctional dyes showed moderate sensitivity to alkalinity and proper kinetic index values compared with the monochlorotriazine-vinylsulfone bifunctional dyes and the imported dyes. The results indicated monofluorotriazine-vinylsulfone bifunctional structure of the dye is suitable for cold pad batch dyeing.

동작 가변적 3D 프린팅 충격보호패드의 설계 (Design of motion-adaptable 3D printed impact protection pad)

  • 박정현;이진숙;이정란
    • 복식문화연구
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    • 제30권3호
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    • pp.403-413
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    • 2022
  • The purpose of this study was to develop a 3D mesh-type impact protection pad with excellent motion adaptability and functionality by applying 3D printing technology. The hexagonal 3D mesh, which constitutes the basic structure of the pad, comprises two types: small and large. The bridge connecting the basic units was designed as the I-type, V-type, IV-type, and VV-type. After evaluating the characteristics of the bridge, it was found that the V-type bridge had the highest flexibility and tensile elongation. The hip joint pad and knee pad were completed by combining the hexagonal 3D mesh structure with the optimal bridge design. The impact protection pad was printed using a fused deposition modeling-type 3D printer with a filament made of thermoplastic polyurethane material, and the protection pad's performance was evaluated. When an impact force of approximately 6,500N was applied to the pad, the force attenuation percentage was 78%, and when an impact force of approximately 8,000N was applied, the force attenuation percentage was 75%. Through these results, it was confirmed that the 3D-printed impact protection pad with a hexagonal 3D mesh structure connected by a V-shaped bridge developed in this study can adapt to changes in the body surface according to movement and provides excellent impact protection performance.

미세 표면 구조물을 갖는 패드의 제작 및 STI CMP 특성 연구 (Development of Microstructure Pad and Its Performances in STI CMP)

  • 정석훈;정재우;박기현;서현덕;박재홍;박범영;주석배;최재영;정해도
    • 한국전기전자재료학회논문지
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    • 제21권3호
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    • pp.203-207
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    • 2008
  • Chemical mechanical polishing (CMP) allows the planarization of wafers with two or more materials. There are many elements such as slurry, polishing pad, process parameters and conditioning in CMP process. Especially, polishing pad is considered as one of the most important consumables because this affects its performances such as WIWNU(within wafer non-uniformity) and MRR(material removal rate). In polishing pad, grooves and pores on its surface affect distribution of slurry, flow and profile of MRR on wafer. A subject of this investigation is to apply CMP for planarization of shallow trench isolation structure using microstructure(MS) pad. MS pad is designed to have uniform structure on its surface and manufactured by micro-molding technology. And then STI CMP performances such as pattern selectivity, erosion and comer rounding are evaluated.

STI-CMP 적용을 위한 이중 연마 패드의 최적화 (Optimization of Double Polishing Pad for STI-CMP Applications)

  • 박성우;서용진;김상용
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제51권7호
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    • pp.311-315
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    • 2002
  • Chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD), inter-level dielectric (ILD) layers of multi-layer interconnections. In this paper, we studied the characteristics of polishing pad, which can apply shallow trench isolation (STI)-CMP process for global planarization of multi-level interconnection structure. Also, we investigated the effects of different sets of polishing pad, such as soft and hard pad. As an experimental result, hard pad showed center-fast type, and soft pad showed edge-fast type. Totally, the defect level has shown little difference, however, the counts of scratch was detected less than 2 on JR111 pad. Through the above results, we can select optimum polishing pad, so we can expect the improvements of throughput and device yield.

패드 특성이 W CMP 공정에 미치는 영향 (Effects of W CMP Process on PAD Characterization)

  • 김상용;서용진;정헌상;김창일;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.178-181
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    • 2002
  • We studied the characteristics of polishing pad, which can apply W CMP process for global planarization of multilevel interconnection structure. Also we investigated the effects of different sets of polishing pad. The purpose of this experiment is the cost reduction by the increase of pad life time and decrease of cycle time and slurry usage with new pad. Especially we studied the effect of polishing pad for CMP process by this experiment of polishing pad that is consumables material during CMP process. We expecting the increase of process throughput and improvement of device manufacturing yield because we can choose optimum polishing pad through this result.

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연마성능 제어를 위한 연마패드표면 해석과 개선 (Polishing Pad Analysis and Improvement to Control Performance)

  • 박재홍;키노시타마사하루;요시다 코이치;박기현;정해도
    • 한국전기전자재료학회논문지
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    • 제20권10호
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    • pp.839-845
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    • 2007
  • In this paper, a polishing pad has been analyzed in detail, to understand surface phenomena of polishing process. The polishing pad plays a key role in polishing process and is one of the important layer in polishing process, because it is a reaction layer of polishing[1]. Pad surface physical property is also ruled by pad profile. The profile and roughness of pad is controlled by different types of conditioning tool. Conditioning tool add mechanical force to pad, and make some roughness and profile. Formed pad surface will affect on polishing performance such as RR (Removal Rate) and uniformity in CMP Pad surface condition is changed by conditioning tool and dummy run and is stable at final. And this research, we want to reduce break-in and dummy polishing process by analysis of pad surface and artificial machining to make stable pad surface. The surface treatment or machining enables to control the surface of polishing pad. Therefore, this research intends to verify the effect of the buffing process on pad surface through analysis of the removal rate, friction force and temperature. In this research, urethane polishing pad which is named IC pad(Nitta-Haas Inc.) and has micro pore structure, is studied because, this type of pad is most conventional type.

Signal Analysis of Motor Current for End Point Detection in the Chemical Mechanical Polishing of Shallow Trench Isolation with Reverse Moat Structure

  • Park, Chang-Jun;Kim, Sang-Yong;Seo, Yong-Jin
    • KIEE International Transactions on Electrophysics and Applications
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    • 제2C권5호
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    • pp.262-267
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    • 2002
  • In this paper, we first studied the factors affecting the motor current (MC) signal, which was strongly affected by the systematic hardware noises depending on polishing such as pad conditioning and arm oscillation of platen and recipe, head motor. Next, we studied the end point detection (EPD) for the chemical mechanical polishing (CMP) process of shallow trench isolation (STI) with reverse moat structure. The MC signal showed a high amplitude peak in the fore part caused by the reverse meal. pattern. We also found that the EP could not be detected properly and reproducibly due to the pad conditioning effect, especially when conventional low selectivity slurry was used. Even when there was no pad conditioning effect, the EPD method could not be applied, since the measured end points were always the same due to the characteristics of the reverse moat structure with an open nitride layer.

금속 CMP 공정시 경질 다공성 패드의 적용 (Application of Hard Porous Pad in Metal CMP Process)

  • 김상용;김남훈;김인표;장의구
    • 한국전기전자재료학회논문지
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    • 제16권5호
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    • pp.385-389
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    • 2003
  • There are four main components of the CMP process: polishing pad, slurry, elastic supporter, and pad conditioner. The polishing pad is an essential component to the reproducibility of polishing uniformity in CMP process. However, the polishing pad in recently using metal CMP raised the several points of high cost caused by the increase of cycle time and the many usage of slurry. It is necessary to develop the novel polishing pad which would lead the cost reduction by the higher pad life-cycle, minimized cycle time and lower slurry usage. The characteristics of polishing pad were studied on the effects of different sets of the Polishing pad, which can be applied to metal chemical mechanical polishing process for global planarization of multilevel interconnection structure. The main purpose of this experiment is cost reduction by the increase of pad life-time, the decrease of cycle time and the lower usage of slurry through the specific hard porous structured pad design. It is confirmed that the novel polishing pad made the slurry usage decrease to 60% as well as the pad life-time increase twice with the 25% improvement of removal rate. The polishing time could be decreased and it also helped the cycle time to diminish. It can be expected that this results will help both the process throughput and the device yield to be improved.